FJAFS1510A
ESBC™ Rated NPN Power Transistor
Applications
Description
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascodes
(ESBC™)
• Smart Meters, Smart Breakers, SMPS,
HV Industrial Power Supplies
The FJAFS1510A is a low-cost, high-performance power
switch designed to provide optimal performance when
used in an ESBC™ configuration in applications such as:
power supplies, motor drivers, smart grid, or ignition
switches. The power switch is designed to operate up to
1550 volts and up to 6amps, while providing exceptionally
low on-resistance and very low switching losses.
• Motor Drivers and Ignition Drivers
ESBC Features (FDC655 MOSFET)
•
•
•
•
•
•
VCS(ON)
IC
Equiv. RCS(ON)
0.426 V
6A
0.071 Ω(1)
The ESBC™ switch is designed to be driven using offthe-shelf power supply controllers or drivers. The
ESBC™ MOSFET is a low-voltage, low-cost, surfacemount device that combines low-input capacitance and
fast switching. The ESBC™ configuration further minimizes the required driving power because it does not
have Miller capacitance.
Low Equivalent On Resistance
Very Fast Switch: 150 kHz
Avalanche Rated
Low Driving Capacitance, No Miller Capacitance
Low Switching Losses
Reliable HV switch: No False Triggering due to
High dv/dt Transients
The FJAFS1510A provides exceptional reliability and a
large operating range due to its square Reverse-BiasSafe-Operating-Area (RBSOA) and rugged design. The
device is avalanche rated and has no parasitic transistors
so is not prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in a highvoltage TO-3PF package.
C
C
2
FJAFS1510A
B
1
B
FDC655
G
E
TO-3PF
3
1
1.Base 2.Collector 3.Emitter
S
Figure 1. Pin Configuration
Figure 2. Internal Schematic Diagram
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
Marking
Package
Packing Method
FJAFS1510ATU
J1510A
TO-3PF
TUBE
Remarks
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
www.fairchildsemi.com
1
FJAFS1510A — ESBC™ Rated NPN Power Transistor
November 2012
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (TC = 25°C)
Operating and Junction Temperature Range
Storage Temperature Range
Value
Unit
1550
750
6
6
60
-55 to +125
-55 to +150
V
V
V
A
W
°C
°C
Notes:
3. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
RθjC
Parameter
Thermal Resistance, Junction to Case
Max.
Unit
2.08
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
ICES
ICBO
IEBO
BVEBO
hFE1
hFE2
VCE(sat)
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Base-Emitter Breakdown Voltage
DC Current Gain
DC Current Gain
Collector-Emitter Saturation
Voltage
Output Capacitance
Cob
Test Conditions
VCB = 1400 V, RBE = 0
VCB = 800 V, IE = 0
VEB = 4 V, IC = 0
IE = 500 μA, IC = 0
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 3 A
IC = 6 A, IB = 1.5 A, TA = 125°C
VCB = 200 V, IE = 0, f = 1 MHz
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
Min.
Typ.
6
15
7
Max.
Unit
100
10
100
μA
μA
μA
V
0.5
V
27
pF
www.fairchildsemi.com
2
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Absolute Maximum Ratings(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
fT
Current Gain Bandwidth
Product
Inductive Current Fall Time
Itf
Inductive Storage Time
ts
Inductive Voltage Fall Time
Vtf
Vtr
Inductive Voltage Rise Time
Inductive Crossover Time
tc
Inductive Current Fall Time
Itf
Inductive Storage Time
ts
Inductive Voltage Fall Time
Vtf
Inductive Voltage Rise Time
Vtr
tc
Inductive Crossover Time
VCSW Maximum Collector Source
Voltage at Turn-off without
Snubber
IGS(OS) Gate-Source Leakage
Current
VCS(ON) Collector-Source On
Voltage
VGS(th)
Ciss
QGS(tot)
rDS(ON)
Gate Threshold Voltage
Test Conditions
Min.
Typ.
Max.
Unit
IC = 0.1 A, VCE = 10 V
15.4
MHz
VGS = 10 V, RG = 47 Ω,
VClamp = 500 V,
IC=1 A, IB= 0.1 A, hFE = 10,
LC = 1 mH,
SRF = 350 kHz
115
670
160
95
130
12.5
1100
68
110
150
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
1.0
nA
VGS = 10 V, IC = 6 A, IB = 2 A, hFE = 3
0.426
V
VGS = 10 V, RG = 47 Ω,
VClamp = 500 V,
IC = 5 A, IB = 1 A, hFE = 5,
LC = 1 mH,
SRF = 350 kHz
hFE = 5, IC = 6 A
1550
VGS = ±20 V
VGS = 10 V, IC = 4 A, IB = 1.3 A, hFE = 3
0.213
V
VGS = 10 V, IC = 2 A, IB = 0.67 A, hFE = 3
0.162
V
VGS = 10 V, IC = 1 A, IB = 0.2 A, hFE = 5
0.141
V
VBS = VGS, IB = 250 μA
1.9
V
VCS = 25 V, f = 1 MHz
470
pF
Input Capacitance
(VGS=VCB=0)
Gate-Source Charge VCB=0 VGS = 10 V, IC = 6 A, VCS = 25 V
VGS = 10 V, ID = 6.3 A
Static Drain to Source
On Resistance
VGS = 10 V, ID = 6.3 A, TA = 125°C
VGS = 4.5 V, ID = 5.5 A
9
nC
21
mΩ
30
mΩ
26
mΩ
Notes:
4. Used typical FDC655 MOSFET specifications in table. Table could vary if other Fairchild MOSFETs are used.
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
www.fairchildsemi.com
3
FJAFS1510A — ESBC™ Rated NPN Power Transistor
ESBC Configured Electrical Characteristics(4)
100
10
IB=2.0A
V CE = 5V
0
T A = 125 C
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
8
6
IB=0.6A
IB=0.4A
4
IB=0.2A
2
0
T A = - 25 C
10
1
0.1
0
0
2
4
6
8
10
12
14
1
Figure 4. Static Characteristic
100
IC = 3 IB
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
100
Figure 5. DC current Gain
10
1
o
TA = 125 C
o
TA = 25 C
o
TA = - 25 C
0.1
0.01
0.1
1
IC = 5 IB
10
o
TA = 125 C
o
TA = 25 C
1
o
TA = -25 C
0.1
0.01
0.1
10
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
hFE=3
Figure 7. Collector-Emitter Saturation Voltage
hFE=5
100
100
IC = 20 IB
IC = 10 IB
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
10
IC [A], COLLECTOR CURRENT
V CE [V], COLLECTOR-EMITTER VOLTAGE
o
TA = 125 C
10
o
TA = 25 C
o
TA = -25 C
1
0.1
0.1
1
10
o
TA = 125 C
o
TA = 25 C
o
TA = -25 C
1
0.1
0.1
10
IC [A], COLLECTOR CURRENT
1
10
IC [A], COLLECTOR CURRENT
Figure 8. Collector-Emitter Saturation Voltage
hFE=10
Figure 9. Collector-Emitter Saturation Voltage
hFE=20
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
0
T A = 25 C
www.fairchildsemi.com
4
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics (Continued)
1000
14
V CE = 5V
IC [A], COLLECTOR CURRENT
12
Cob [pF], Capacitance
10
8
6
4
0
0
T A = 125 C
25 C
100
Cob (Emitter Open)
0
- 25 C
2
Cob (Emitter Grounded)
0
0.0
0.2
0.4
0.6
0.8
1.0
10
1.2
1
10
100
1000
VCB [V], Collector-Base Voltage
V BE [V], BASE-EMITTER VOLTAGE
Figure 10. Base-Emitter On Voltage
Figure 11. Capacitance
2.5
250
o
o
tA = 25 C L=1mH SRF=350KHz
tA = 25 C L=1mH SRF=350KHz
225
200
2.0
hFE=5 common emitter
175
Time [us]
Time [ns]
150
hFE=10 common emitter
125
hFE=5 commom emitter
100
1.5
hFE=10 commom emitter
1.0
hFE=5 ESBC
75
50
hFE=10 ESBC
25
hFE=10 ESBC
hFE=5 ESBC
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.5
0.5
6.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 12. Inductive Load
Collector Current Fall-time (tf)
Figure 13. Inductive Load
Collector Current Storage time (tstg)
360
o
tA = 25 C L=1mH SRF=350KHz
o
tA = 25 C L=1mH SRF=350KHz
240
320
200
280
hFE=5 ESBC
hFE=10 common emitter
200
160
Time [ns]
Time [ns]
240
hFE=5 commom emitter
hFE=10 ESBC
160
hFE=10 common emitter
120
80
hFE=5 commom emitter
120
40
80
hFE=10 ESBC
hFE=5 ESBC
40
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
0.5
6.0
Figure 14. Inductive Load
Collector Voltage Fall-time (tf)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 15. Inductive Load
Collector Voltage Rise-time (tr)
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
1.0
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
www.fairchildsemi.com
5
320
7
o
VDD = +/-50V
tA = 25 C L=1mH SRF=350KHz
IC [A], COLLECTOR CURRENT
hFE=10 common emitter
240
Time [ns]
RLOAD = 500KΩ
6
280
200
hFE=5 ESBC
160
120
hFE=5 commom emitter
-3V RBSOA
5
-5V RBSOA
4
-7V RBSOA
3
2
1
80
hFE=10 ESBC
40
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4.5
5.0
5.5
0
6.0
200
400
600
800
1000
1200
1400
1600
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 16. Inductive Load
Collector Current/Voltage Crossover (tc)
Figure 17. Reverse Bias Safe Operating Area
10
IC [mA], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
o
TC = 25 C
VDD = +/-50V, RLOAD = 500KΩ
9
HFE = 4
8
7
6
5
4
3
2
Single 80us Pulse
10
1
1
0.1
0
0
200
400
600
800
1000
1200
1400
0
1600
500
1000
1500
2000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 18. ESBC RBSOA
Figure 19. Forward Bias Safe Operating Area
80
PD [W], POWER DISSIPATION
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
C o
T [ C], CASE TEMPERATURE
Figure 20. Power Derating
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
www.fairchildsemi.com
6
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Typical Performance Characteristics (Continued)
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Test Circuits
Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating
}
}
sT
sT
}
pj A
pi
pj A
A
k|{
k|{
R\G}
Figure 22. Energy Rating Test Circuit
Figure 24. FBSOA
Figure 23. Ft Measurement
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
www.fairchildsemi.com
7
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Test Circuits (Continued)
Figure 25. Simplified Saturated Switch Driver Circuit
Functional Test Waveforms
Figure 26. Crossover Time Measurement
90% Vce
90% Ic
10% Vce
10% Ic
Figure 27. Saturated Switching Waveform
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
www.fairchildsemi.com
8
Figure 29. Storage Time - ESBC FET
Gate (off) to IC Fall-time
Figure 28. Storage Time - Common Emitter
Base turn off (Ib2) to IC Fall-time
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
www.fairchildsemi.com
9
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Functional Test Waveforms (Continued)
- 30 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant
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Figure 30. Very Wide Input Voltage Range Supply
Driving ESBC Switches
Fairchild
Proprietary
Figure 31. VCC Derived
Figure 32. VBIAS Supply Derived
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
Figure 33. Proportional Drive
www.fairchildsemi.com
10
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Very Wide Input Voltage Range Supply
FJAFS1510A — ESBC™ Rated NPN Power Transistor
Physical Dimensions
TO-3PF
15.70
15.30
9.90
4.60
4.40
3.20
2.80
3.80
3.40
7.75
10.20
9.80
16.70
16.30
16.70
16.30
14.70
14.30
1.93
15.00
14.60
23.20
22.80
26.70
26.30
4.20
3.80
1
2
3
2.20
1.80
2.70
2.30
2.20
(3X)
1.80
3.50
3.10
0.95
(3X)
0.65
5.75
5.15
1.10
0.80
5.75
5.15
NOTES:
5.70
5.30
2.20
1.80
3.50
3.10
A. THIS PACKAGE CONFORMS TO SC94
JEITA PACKAGING STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. PIN 2 CONNECTS TO DAP.
E. DRAWING FILE NAME: TO3PFA03REV1
Figure 34. TO-3PF, 3 Leads, Molded, Full Pack
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/products/discrete/pdf/to3pf_tr.pdf.
© 2012 Fairchild Semiconductor Corporation
FJAFS1510A Rev. A2
www.fairchildsemi.com
11
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
F-PFS¥
FRFET®
SM
Global Power Resource
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
GTO¥
IntelliMAX¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
MicroPak¥
MicroPak2¥
MillerDrive¥
MotionMax¥
mWSaver¥
OptoHiT¥
OPTOLOGIC®
OPTOPLANAR®
2Cool¥
AccuPower¥
AX-CAP¥*
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
ESBC¥
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
FAST®
FastvCore¥
FETBench¥
FlashWriter®*
FPS¥
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
Quiet Series¥
RapidConfigure¥
¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
SMART START¥
Solutions for Your Success¥
SPM®
STEALTH¥
SuperFET®
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
SyncFET¥
Sync-Lock™
®
*
®
The Power Franchise®
TinyBoost¥
TinyBuck¥
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
TriFault Detect¥
TRUECURRENT®*
PSerDes¥
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used herein:
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life, and (c) whose failure to perform when properly used in
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I62
© Fairchild Semiconductor Corporation
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