AVAGO ACPL-332J-500E 2.5 amp output current igbt gate driver optocoupler Datasheet

ACPL-332J
2.5 Amp Output Current IGBT Gate Driver Optocoupler
with Integrated (VCE) Desaturation Detection, UVLO
Fault Status Feedback and Active Miller Clamping
Data Sheet
Lead (Pb) Free
RoHS 6 fully
compliant
RoHS 6 fully compliant options available;
-xxxE denotes a lead-free product
Description
Features
The ACPL-332J is an advanced 2.5 A output current, easyto-use, intelligent gate driver which makes IGBT VCE fault
protection compact, affordable, and easy-to implement.
Features such as integrated VCE detection, under
voltage lockout (UVLO), “soft” IGBT turn-off, isolated
open collector fault feedback and active Miller clamping
provide maximum design flexibility and circuit protection.
• Under Voltage Lock-Out Protection (UVLO) with
Hysteresis
The ACPL-332J contains a AlGaAs LED. The LED is
optically coupled to an integrated circuit with a power
output stage. ACPL-332J is ideally suited for driving
power IGBTs and MOSFETs used in motor control inverter
applications. The voltage and current supplied by these
optocouplers make them ideally suited for directly
driving IGBTs with ratings up to 1200 V and 150 A. For
IGBTs with higher ratings, the ACPL-332J can be used to
drive a discrete power stage which drives the IGBT gate.
The ACPL-332J has an insulation voltage of VIORM = 1230
VPEAK.
Block Diagram
13
VCC2
CATHODE
6, 7
D
R
I
V
E
R
5, 8
LED1
11
14
VOUT
DESAT
DESAT
9, 12
SHIELD
VEE
FAULT
2
3
• Open Collector Isolated fault feedback
• “Soft” IGBT Turn-off
• Fault Reset by next LED turn-on (low to high) after
fault mute period
• Available in SO-16 package
• Safety approvals: UL approved, 5000 VRMS for 1
minute, CSA approved, IEC/EN/DIN-EN 60747-5-5
approved VIORM = 1230 VPEAK
Specifications
• 2.5 A maximum peak output current
• 2.0 A minimum peak output current
• 250 ns maximum propagation delay over temperature
range
• 100 ns maximum pulse width distortion (PWD)
• ICC(max) < 5 mA maximum supply current
• Wide VCC operating range: 15 V to 30 V over
temperature range
• 1.7 A Miller Clamp. Clamp pin short to VEE if not used
• Wide operating temperature range: –40°C to 105°C
VCLAMP
VCC1
• Miller Clamping
• 50 kV/μs minimum common mode rejection (CMR) at
VCM = 1500 V
UVLO
ANODE
• Desaturation Detection
10
LED2
16
VCLAMP
VE
Applications
• Isolated IGBT/Power MOSFET gate drive
• AC and brushless DC motor drives
VS
1, 4
15
SHIELD
VLED
• Industrial inverters and Uninterruptible Power Supply
(UPS)
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.
Pin Description
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
Pin
Symbol
Description
1
VS
Input Ground
2
VCC1
Positive input supply voltage. (3.3 V to 5.5 V)
3
FAULT
Fault output. FAULT changes from a high impedance state
to a logic low output within 5 μs of the voltage on the
DESAT pin exceeding an internal reference voltage of 7 V.
FAULT output is an open collector which allows the FAULT
outputs from all ACPL-332J in a circuit to be connected
together in a “wired OR” forming a single fault bus for interfacing directly to the micro-controller.
4
VS
Input Ground
5
CATHODE
Cathode
6
ANODE
Anode
7
ANODE
Anode
8
CATHODE
Cathode
9
VEE
Output supply voltage.
10
VCLAMP
Miller clamp
11
VOUT
Gate drive voltage output
12
VEE
Output supply voltage.
13
VCC2
Positive output supply voltage
14
DESAT
Desaturation voltage input. When the voltage on DESAT
exceeds an internal reference voltage of 6.5 V while the
IGBT is on, FAULT output is changed from a high impedance
state to a logic low state within 5 μs.
15
VLED
LED anode. This pin must be left unconnected for guaranteed data sheet performance. (For optical coupling testing
only)
16
VE
Common (IGBT emitter) output supply voltage.
Ordering Information
ACPL-332J is UL Recognized with 5000 Vrms for 1 minute per UL1577.
Option
Part number
RoHS Compliant
Package
Surface
Mount
ACPL-332J
-000E
SO-16
X
-500E
X
Tape& Reel
X
IEC/EN/DIN EN
60747-5-5
Quantity
X
45 per tube
X
850 per reel
To order, choose a part number from the part number column and combine with the desired option from the option
column to form an order entry.
Example 1:
ACPL-332J-500E to order product of SO-16 Surface Mount package in Tape and Reel packaging with IEC/EN/DIN EN
60747-5-5 Safety Approval in RoHS compliant.
Example 2:
ACPL-332J-000E to order product of SO-16 Surface Mount package in tube packaging with IEC/EN/DIN EN
60747-5-5 Safety Approval and RoHS compliant.
Option datasheets are available. Contact your Avago sales representative or authorized distributor for information.
Remarks: The notation ‘#XXX’ is used for existing products, while (new) products launched since 15th July 2001 and
RoHS compliant option will use ‘-XXXE‘.
2
Package Outline Drawings
ACPL-332J 16-Lead Surface Mount Package
0.018
(0.457)
0.050
(1.270)
16 15 14 13 12 11 10
LAND PATTERN RECOMMENDATION
9
TYPE NUMBER
DATE CODE
A 332J
YYWW
1
2
3
4
5
0.458 (11.63)
0.295 ± 0.010
(7.493 ± 0.254)
6
7
0.085 (2.16)
8
0.406 ± 0.10
(10.312 ± 0.254)
0.025 (0.64)
0.345 ± 0.010
(8.763 ± 0.254)
9°
0.018
(0.457)
0.138 ± 0.005
(3.505 ± 0.127)
0- 8°
0.025 MIN.
0.408 ± 0.010
(10.363 ± 0.254)
ALL LEADS
TO BE
COPLANAR
± 0.002
0.008 ± 0.003
(0.203 ± 0.076)
STANDOFF
Dimensions in inches (millimeters)
Notes: Initial and continued variation in the color of the ACPL-332J’s white mold compound is normal and does note affect device performance or
reliability.
Floating Lead Protrusion is 0.25 mm (10 mils) max.
Recommended Pb-Free IR Profile
Recommended reflow condition as per JEDEC Standard, J-STD-020 (latest revision). Non-Halide Flux should be used.
3
Regulatory Information
The ACPL-332J is approved by the following organizations:
IEC/EN/DIN EN 60747-5-5
UL
Approval under:
DIN EN 60747-5-5 (VDE 0884-5):2011-11
EN 60747-5-5:2011
Approval under UL 1577, component recognition
program up to VISO = 5000 VRMS. File E55361.
CSA
Approval under CSA Component Acceptance Notice #5,
File CA 88324.
Table 1. IEC/EN/DIN EN 60747-5-5 Insulation Characteristics*
Description
Symbol
Characteristic
Installation classification per DIN VDE 0110/39, Table 1
for rated mains voltage ≤ 150 Vrms
for rated mains voltage ≤ 300 Vrms
for rated mains voltage ≤ 600 Vrms
for rated mains voltage ≤ 1000Vrms
I – IV
I – IV
I – IV
I – III
Climatic Classification
40/100/21
Pollution Degree (DIN VDE 0110/39)
2
Unit
Maximum Working Insulation Voltage
VIORM
1230
Vpeak
Input to Output Test Voltage, Method b**,
VIORM x 1.875=VPR, 100% Production Test with tm=1 sec, Partial discharge < 5 pC
VPR
2306
Vpeak
Input to Output Test Voltage, Method a**,
VIORM x 1.6=VPR, Type and Sample Test, tm=10 sec, Partial discharge < 5 pC
VPR
1968
Vpeak
Highest Allowable Overvoltage (Transient Overvoltage tini = 60 sec)
VIOTM
8000
Vpeak
Case Temperature
TS
175
°C
Input Current
IS, INPUT
400
mA
Output Power
PS, OUTPUT
1200
mW
RS
>109
Ω
Safety-limiting values – maximum values allowed in the event of a failure.
Insulation Resistance at TS, VIO = 500 V
*
Isolation characteristics are guaranteed only within the safety maximum ratings which must be ensured by protective circuits in application.
Surface mount classification is class A in accordance with CECCOO802.
** Refer to the optocoupler section of the Isolation and Control Components Designer’s Catalog, under Product Safety Regulations section IEC/EN/
DIN EN 60747-5-5, for a detailed description of Method a and Method b partial discharge test profiles.
Dependence of Safety Limiting Values on Temperature. (take from DS AV01-0579EN Pg.7)
4
Table 2. Insulation and Safety Related Specifications
Parameter
Symbol
ACPL-332J
Units
Conditions
Minimum External Air Gap
(Clearance)
L(101)
8.3
mm
Measured from input terminals to output terminals,
shortest distance through air.
Minimum External Tracking
(Creepage)
L(102)
8.3
mm
Measured from input terminals to output terminals,
shortest distance path along body.
0.5
mm
Through insulation distance conductor to conductor,
usually the straight line distance thickness between
the emitter and detector.
>175
V
DIN IEC 112/VDE 0303 Part 1
Minimum Internal Plastic Gap
(Internal Clearance)
Tracking Resistance
(Comparative Tracking Index)
CTI
Isolation Group
IIIa
Material Group (DIN VDE 0110, 1/89, Table 1)
Table 3. Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Units
Storage Temperature
TS
-55
125
°C
Operating Temperature
TA
-40
105
°C
2
Output IC Junction Temperature
TJ
125
°C
2
Average Input Current
IF(AVG)
25
mA
1
Peak Transient Input Current,
(<1 μs pulse width, 300pps)
IF(TRAN)
1.0
A
Reverse Input Voltage
VR
5
V
“High” Peak Output Current
IOH(PEAK)
2.5
A
3
“Low” Peak Output Current
IOL(PEAK)
2.5
A
3
Positive Input Supply Voltage
VCC1
FAULT Output Current
IFAULT
FAULT Pin Voltage
VFAULT
Total Output Supply Voltage
(VCC2 - VEE)
-0.5
7.0
V
8.0
mA
-0.5
VCC1
V
-0.5
35
V
Negative Output Supply Voltage
(VE - VEE)
-0.5
15
V
Positive Output Supply Voltage
(VCC2 - VE)
-0.5
35 - (VE - VEE)
V
Gate Drive Output Voltage
VO(PEAK)
-0.5
VCC2
V
Peak Clamping Sinking Current
IClamp
1.7
A
Miller Clamping Pin Voltage
VClamp
-0.5
VCC2
V
DESAT Voltage
VDESAT
VE
VE + 10
V
Note
6
Output IC Power Dissipation
PO
600
mW
2
Input IC Power Dissipation
PI
150
mW
2
Solder Reflow Temperature Profile
See Package Outline Drawings section
Units
Note
Table 4. Recommended Operating Conditions
Parameter
Symbol
Min.
Max.
Operating Temperature
TA
- 40
105
°C
2
Total Output Supply Voltage
(VCC2 - VEE)
15
30
V
7
Negative Output Supply Voltage
(VE - VEE)
0
15
V
4
Positive Output Supply Voltage
(VCC2 - VE)
15
30 - (VE - VEE)
V
Input Current (ON)
IF(ON)
8
12
mA
Input Voltage (OFF)
VF(OFF)
- 3.6
0.8
V
5
Table 5. Electrical Specifications (DC)
Unless otherwise noted, all typical values at TA = 25°C, VCC2 - VEE = 30 V, VE - VEE = 0 V;
all Minimum/Maximum specifications are at Recommended Operating Conditions. Positive Supply Voltage used.
Parameter
Symbol
Typ.
Max.
Units
Test Conditions
FAULT Logic Low
Output Voltage
VFAULTL
0.1
0.4
V
IFAULT = 1.1 mA, VCC1 = 5.5V
FAULT Logic High
Output Current
IFAULTH
0.1
0.4
V
IFAULT = 1.1 mA, VCC1 = 3.3V
0.02
0.5
μA
VFAULT = 5.5 V, VCC1 = 5.5V
0.002
0.3
μA
VFAULT = 3.3 V, VCC1 = 3.3V
High Level
Output Current
IOH
A
VO = VCC2 - 4
A
VO = VCC2 – 15
Low Level
Output Current
IOL
A
VO = VEE + 2.5
A
VO = VEE + 15
Low Level Output Current
During Fault Condition
IOLF
90
140
mA
VOUT - VEE = 14 V
High Level
Output Voltage
VOH
VCC-2.9
VCC-2.0
V
IO = -650 μA
4, 6,
23
Low Level
Output Voltage
VOL
0.17
V
IO = 100 mA
5, 7,
24
Clamp Pin
Threshold Voltage
VtClamp
2.0
V
Clamp Low Level
Sinking Current
ICL
1.1
A
VO = VEE + 2.5
8
High Level
Supply Current
ICC2H
2.5
5
mA
IO = 0 mA
9
2.5
5
mA
IO = 0 mA
9, 10,
25,
26
Low Level
Supply Current
ICC2L
Blanking Capacitor
Charging Current
ICHG
-0.13
-0.24
-0.33
mA
VDESAT = 2 V
11, 27
9, 10
Blanking Capacitor
Discharge Current
IDSCHG
10
30
mA
VDESAT = 7.0 V
28
DESAT Threshold
VDESAT
6
6.5
7.5
V
VCC2 -VE >VUVLO-
12
UVLO Threshold
VUVLO+
10.5
11.6
12.5
V
VO > 5 V
7, 9,
11
VUVLO-
9.2
10.3
11.1
V
VO < 5 V
7, 9,
12
UVLO Hysteresis
(VUVLO+
- VUVLO-)
0.4
1.3
Threshold Input Current
Low to High
IFLH
Threshold Input Voltage
High to Low
VFHL
0.8
Input Forward Voltage
VF
1.2
Temperature Coefficient
of Input Forward Voltage
ΔVF/ΔTA
Input Reverse
Breakdown Voltage
BVR
Input Capacitance
CIN
6
Min.
-0.5
-1.5
-2.0
0.5
1.5
2.0
0.35
2.0
230
0.5
V
6
mA
IO = 0 mA, VO > 5 V
V
1.6
-1.3
5
70
1.95
V
IF = 10 mA
mV/°C
V
IR = 10 μA
pF
f = 1 MHz, VF = 0 V
Fig.
Note
2, 4,
21
5
3, 5,
22
5
3
3
6
7, 8, 9
23
9
Table 6. Switching Specifications (AC)
Unless otherwise noted, all typical values at TA = 25°C, VCC2 - VEE = 30 V, VE - VEE = 0 V;
all Minimum/Maximum specifications are at Recommended Operating Conditions. Only Positive Supply Voltage used.
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Fig.
Note
Propagation Delay Time
to High Output Level
tPLH
100
180
250
ns
1, 13,
14, 15,
16, 29
13, 15
Propagation Delay Time
to Low Output Level
tPHL
100
180
250
ns
Rg = 10 Ω,
Cg = 10 nF,
f = 10 kHz,
Duty Cycle = 50%,
IF = 10 mA,
VCC2 = 30 V
Pulse Width Distortion
PWD
-100
20
100
ns
14, 17
Propagation Delay
Difference Between
Any Two Parts or Channels
(tPHL - tPLH)
PDD
-150
150
ns
17, 16
Rise Time
tR
50
Fall Time
tF
50
DESAT Sense to
90%VO Delay
tDESAT(90%)
0.15
0.5
μs
CDESAT = 100pF, Rg = 10 Ω,
Cg = 10 nF, VCC2 = 30 V
17, 30,
37
DESAT Sense to
10% VO Delay
tDESAT(10%)
2
3
μs
CDESAT = 100pF, Rg = 10 Ω,
Cg = 10 nF, VCC2 = 30 V
18, 19,
20, 30,
37
DESAT Sense to Low Level
FAULT Signal Delay
tDESAT(FAULT)
0.25
0.5
μs
CDESAT = 100 pF, RF = 2.1 kΩ,
CF = Open, Rg = 10 Ω,
Cg = 10 nF, VCC2 = 30 V
30, 37
18
30, 37
19
37
20
31, 32,
33, 34
21
ns
ns
0.25
μs
DESAT Sense to DESAT
Low Propagation Delay
tDESAT(LOW)
DESAT Input Mute
tDESAT(MUTE)
5
RESET to High Level
FAULT Signal Delay
tRESET(FAULT)
0.3
1
2.0
μs
CDESAT = 100pF, RF = 2.1 kΩ,
Rg = 10 Ω, Cg = 10 nF,
VCC1 = 5.5V, VCC2 = 30 V
0.8
1.5
2.5
μs
CDESAT = 100pF, RF = 2.1 kΩ,
Rg = 10 Ω, Cg = 10 nF,
VCC1 = 3.3V, VCC2 = 30 V
15
25
kV/μs
TA = 25°C, IF = 10 mA
VCM = 1500 V, VCC2 = 30 V, RF
= 2.1 kΩ, CF = 15 pF
50
60
15
25
50
60
Output Low Level Common
Mode Transient Immunity
7
|CMH|
|CML|
19
CDESAT = 100 pF, RF = 2.1 kΩ,
CF = 1 nF, Rg = 10 Ω,
Cg = 10 nF, VCC2 = 30 V
0.8
Output High Level Common
Mode Transient Immunity
1, 13,
14, 15,
16, 29
CDESAT = 100pF, RF = 2.1 kΩ,
Rg = 10 Ω, Cg = 10 nF,
VCC2 = 30 V
μs
TA = 25°C, IF = 10 mA
VCM = 1500 V, VCC2 = 30 V, RF
= 2.1 kΩ, CF = 1 nF
kV/μs
TA = 25°C, VF = 0 V
VCM = 1500 V, VCC2 = 30 V, RF
= 2.1 kΩ, CF = 15 pF
TA = 25°C, VF = 0 V
VCM = 1500 V, VCC2 = 30 V, RF
= 2.1 kΩ, CF = 1 nF
21, 26
31, 32,
33, 34
22
Table 7. Package Characteristics
Parameter
Symbol
Min.
Input-Output Momentary
Withstand Voltage
VISO
5000
Input-Output Resistance
RI-O
Input-Output Capacitance
Output IC-to-Pins 9 &10
Thermal Resistance
Typ.
Max.
Units
Test Conditions
Fig.
Note
Vrms
RH < 50%, t = 1 min.,
TA = 25°C
24, 25
> 109
Ω
VI-O = 500 V
25
CI-O
1.3
pF
freq=1 MHz
θ09-10
30
°C/W
TA = 25°C
Notes:
1. Derate linearly above 70°C free air temperature at a rate of 0.3 mA/°C.
2. In order to achieve the absolute maximum power dissipation specified, pins 4, 9, and 10 require ground plane connections and may require
airflow. See the Thermal Model section in the application notes at the end of this data sheet for details on how to estimate junction temperature
and power dissipation. In most cases the absolute maximum output IC junction temperature is the limiting factor. The actual power dissipation
achievable will depend on the application environment (PCB Layout, air flow, part placement, etc.). See the Recommended PCB Layout section
in the application notes for layout considerations. Output IC power dissipation is derated linearly at 10 mW/°C above 90°C. Input IC power
dissipation does not require derating.
3. Maximum pulse width = 10 μs. This value is intended to allow for component tolerances for designs with IO peak minimum = 2.0 A. Derate
linearly from 3.0 A at +25°C to 2.5 A at +105°C. This compensates for increased IOPEAK due to changes in VOL over temperature.
4. This supply is optional. Required only when negative gate drive is implemented.
5. Maximum pulse width = 50 μs.
6. See the Slow IGBT Gate Discharge During Fault Condition section in the applications notes at the end of this data sheet for further details.
7. 15 V is the recommended minimum operating positive supply voltage (VCC2 - VE) to ensure adequate margin in excess of the maximum VUVLO+
threshold of 12.5V. For High Level Output Voltage testing, VOH is measured with a dc load current. When driving capacitive loads, VOH will
approach VCC as IOH approaches zero units.
8. Maximum pulse width = 1.0 ms.
9. Once VO of the ACPL-332J is allowed to go high (VCC2 - VE > VUVLO+), the DESAT detection feature of the ACPL-332J will be the primary source of
IGBT protection. UVLO is needed to ensure DESAT is functional. Once VCC2 is increased from 0V to above VUVLO+, DESAT will remain functional
until VCC2 is decreased below VUVLO-. Thus, the DESAT detection and UVLO features of the ACPL-332J work in conjunction to ensure constant
IGBT protection.
10. See the DESAT fault detection blanking time section in the applications notes at the end of this data sheet for further details.
11. This is the “increasing” (i.e. turn-on or “positive going” direction) of VCC2 - VE
12. This is the “decreasing” (i.e. turn-off or “negative going” direction) of VCC2 - VE
13. This load condition approximates the gate load of a 1200 V/150A IGBT.
14. Pulse Width Distortion (PWD) is defined as |tPHL - tPLH| for any given unit.
15. As measured from IF to VO.
16. The difference between tPHL and tPLH between any two ACPL-332J parts under the same test conditions.
17. As measured from ANODE, CATHODE of LED to VOUT
18. This is the amount of time from when the DESAT threshold is exceeded, until the FAULT output goes low.
19. This is the amount of time the DESAT threshold must be exceeded before VOUT begins to go low, and the FAULT output to go low. This is supply
voltage dependent.
20. Auto Reset: This is the amount of time when VOUT will be asserted low after DESAT threshold is exceeded. See the Description of Operation (Auto
Reset) topic in the application information section.
21. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the
output will remain in the high state (i.e., VO > 15 V or FAULT > 2 V).
22. Common mode transient immunity in the low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the
output will remain in a low state (i.e., VO < 1.0 V or FAULT < 0.8 V).
23. To clamp the output voltage at VCC - 3 VBE, a pull-down resistor between the output and VEE is recommended to sink a static current of 650 μA
while the output is high. See the Output Pull-Down Resistor section in the application notes at the end of this data sheet if an output pull-down
resistor is not used.
24. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage ≥ 6000 Vrms for 1 second. This test is
performed before the 100% production test for partial discharge (method b) shown in IEC/EN/DIN EN 60747-5-5 Insulation Characteristic Table.
25. This is a two-terminal measurement: pins 1-8 are shorted together and pins 9-16 are shorted together.
26. Split resistors network with a ratio of 1:1 is needed at input LED1. See Figure 34.
8
IF
tr
tf
90%
50%
V OUT
10%
tPLH
tPHL
Figure 1. VOUT propagation delay waveforms
5
2.5
IOL - OUTPUT LOW CURRENT
IOH - OUTPUT HIGH CURRENT - A
3.0
2.0
1.5
1.0
-40
-20
0
20
40
60
80
4
3
2
-----V OUT =VEE +15V
___VOUT =VEE +2.5V
1
0
-40
105
-20
T A - TEMPERATURE - oC
60
80
105
80
105
0.25
____ I
OUT
= -650uA
-0.5
VOL - OUTPUT LOW VOLTAGE - V
(VOH - VCC) - HIGH OUTPUT VOLTAGE DROP - V
40
Figure 3. IOL vs. temperature
0
-1
-1.5
-2
-2.5
-20
0
20
TA
Figure 4. VOH vs. temperature
9
20
T A - TEMPERATURE - o C
Figure 2. IOH vs. temperature
-40
0
40
- TEMPERATURE - oC
60
80
105
0.2
0.15
0.1
0.05
0
-40
-20
0
20
40
T A - TEMPERATURE -
Figure 5. VOL vs. temperature
60
oC
8
_ _ _ _ 105 o C
______ 25 o C
--------- -40 o C
29
VOL - LOW OUTPUT VOLTAGE DROP - V
V OH - HIGH OUTPUT VOLTAGE DROP - V
30
28
27
26
0.0
0.2
I OH
0.4
0.6
- OUTPUT HIGH CURRENT - A
0.8
5
4
3
2
1
0
1.0
0.5
1
2
2.5
Figure 7. VOL vs. IOL
3.50
ICC2 - OUTPUT SUPPLY CURRENT - mA
4
3
2
1
0
-40
-20
0
20
40
60
TA - TEMPERATURE - oC
80
105
3.00
2.75
2.50
2.25
2.00
-40
-20
0
20
60
80
105
- TEMPERATURE - oC
-0.20
ICC2H
ICC2L
ICH - BLANKING CAPACITOR
CHARGING CURRENT - mA
2.55
2.45
2.35
2.25
20
25
30
-0.25
-0.30
-0.35
-40
-20
0
VCC2 - OUTPUR SUPPLY VOLTAGE - V
Figure 10. ICC2 vs. VCC2
40
Figure 9. ICC2 vs. temperature
2.65
15
ICC2H
ICC2L
3.25
TA
Figure 8. ICL vs. temperature
10
1.5
IoL - OUTPUT LOW CURRENT - A
Figure 6. VOH vs. IOH
ICL - CLAMP LOW LEVEN SINKING CURRENT
6
0
25
ICC2 - OUTPUT SUPPLY CURRENT - mA
_ _ _ _ 105 o C
______ 25 o C
--------- -40 o C
7
Figure 11. ICHG vs. temperature
20
40
60
TA - TEMPERATURE - oC
80
105
300
t PLH
t PHL
TP - PROPAGATION DELAY - ns
VDESAT - DESAT THRESHOLD - V
7.5
7.0
6.5
-20
0
20
40
60
TA - TEMPERATURE - qC
80
105
0
20
40
60
TA - TEMPERATURE - qC
80
t PLH
t PHL
105
t PLH
t PHL
250
TP - PROPAGATION DELAY - ns
TP - PROPAGATION DELAY - ns
-20
300
300
200
150
20
25
Vcc - SUPPLY VOLTAGE - V
30
Figure 14. Propagation delay vs. supply voltage
200
150
t PLH
t PHL
200
100
0
10
20
30
LOAD CAPACITANCE - nF
Figure 16. Propagation delay vs. load capacitance
0
10
20
30
LOAD RESISTANCE - ohm
Figure 15. Propagation delay vs. load resistance
300
0
250
100
100
15
TP - PROPAGATION DELAY - ns
150
Figure 13. Propagation delay vs. temperature
Figure 12. DESAT threshold vs. temperature
11
200
100
-40
6.0
-40
250
40
50
40
50
TDESAT - DESAT Sense to 10% Vo Delay - us
TDESAT90% - DESAT Sense to 90% Vo Delay - ns
3.0
300
250
200
150
100
-40
-20
0
20
40
60
80
VCC2 = 15V
VCC2 = 30V
2.5
2.0
1.5
1.0
-40
105
-20
0
TA - TEMPERATURE - qC
Figure 17. DESAT sense to 90% VOUT delay vs. temperature
TDESAT10% - DESAT Sense to 10% Vo Delay - ms
TDESAT10% - DESAT Sense to 10% Vo Delay - us
VCC2 = 15V
VCC2 = 30V
3.0
2.0
1.0
0.0
20
30
40
LOAD RESISTANCE - ohm
Figure 19. DESAT sense to 10% VOUT delay vs. load resistance
12
40
60
80
105
Figure 18. DESAT sense to 10% VOUT delay vs. temperature
4.0
10
20
TA - TEMPERATURE - qC
50
0.012
VCC2 = 15V
VCC2 = 30V
0.008
0.004
0.000
0
10
20
30
40
LOAD CAPACITANCE - nF
Figure 20. DESAT sense to 10% VOUT delay vs. load capacitance
50
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
0.1μF
15V Pulsed
+_
IOUT
0.1μF
7
ANODE
8
CATHODE
VEE
9
1
VS
VE
16
2
VCC1
VLED
15
3
FAULT
DESAT
14
4
VS
VCC2
13
5
CATHODE
6
ANODE
+_
30V
10mA
Figure 21. IOH Pulsed test circuit
0.1μF
15V Pulsed
VEE
12
IOUT
7
ANODE
8
CATHODE
VOUT
11
VCLAMP
10
VEE
9
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
0.1μF
+_
+_
30V
Figure 22. IOL Pulsed test circuit
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
10mA
Figure 23. VOH Pulsed test circuit
13
0.1μF
VOUT
0.1μF
+_
650μA
30V
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
0.1μF
100mA
7
ANODE
8
CATHODE
VOUT
0.1μF
+_
30V
Figure 24. VOL Pulsed test circuit
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
0.1μF
ICC2
0.1μF
+_
30V
10mA
Figure 25. ICC2H test circuit
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
Figure 26. ICC2L test circuit
14
0.1μF
I CC2
0.1μF
+_
30V
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
VE
16
VLED
15
DESAT
14
ICHG
7
ANODE
8
CATHODE
0.1μF
0.1μF
+_
30V
10mA
Figure 27. ICHG Pulsed test circuit
VS
2
VCC1
3
FAULT
+_
1
7V
0.1μF
IDSCHG
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
0.1μF
+_
30V
Figure 28. IDSCHG test circuit
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
0.1μF
VOUT
10Ω
10mA, 10kHz,
50% Duty Cycle
7
ANODE
8
CATHODE
Figure 29. tPLH, tPHL, tf, tr, test circuit
15
VCLAMP
10
VEE
9
10nF
0.1μF
+_
30V
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VIN
RF=2.1kΩ
VFAULT
0.1μF
CF
5V
+_
VOUT
10Ω
7
ANODE
8
VCLAMP
10
CATHODE
VEE
9
1
VS
VE
16
2
VCC1
VLED
15
3
FAULT
DESAT
14
4
VS
VCC2
13
5
CATHODE
VEE
12
10mA
0.1μF
+_
30V
10nF
Figure 30. tDESAT fault test circuit
5V
RF=2.1kΩ
SCOPE
CF=15pF
or 1nF
30V
0.1μF
10
10Ω
6
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
0.1μF
360Ω
10nF
VCM
Figure 31. CMR Test circuit LED2 off
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
5V
RF=2.1kΩ
SCOPE
CF=15pF
or 1nF
30V
0.1μF
10Ω
0.1μF
360Ω
Figure 32. CMR Test Circuit LED2 on
16
VCM
10nF
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
5V
RF=2.1kΩ
CF=15pF
or 1nF
30V
0.1μF
SCOPE
10Ω
10
0.1μF
360Ω
10nF
VCM
Figure 33. CMR Test circuit LED1 off
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
5V
RF=2.1kΩ
CF=15pF
or 1nF
30V
0.1μF
SCOPE
10 Ω
0.1μF
360 Ω
10nF
5V
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
Ÿ
Ÿ
Split resistors network with a ratio of 1:1
VCM
Figure 34. CMR Test Circuit LED1 on
17
Application Information
Product Overview Description
The ACPL-332J is a highly integrated power control
device that incorporates all the necessary components
for a complete, isolated IGBT / MOSFET gate drive circuit
with fault protection and feedback into one SO-16
package. Active Miller clamp function eliminates the
need of negative gate drive in most application and
allows the use of simple bootstrap supply for high side
driver. An optically isolated power output stage drives
IGBTs with power ratings of up to 150 A and 1200 V. A
high speed internal optical link minimizes the propagation delays between the microcontroller and the IGBT
while allowing the two systems to operate at very large
common mode voltage differences that are common
in industrial motor drives and other power switching
applications. An output IC provides local protection
for the IGBT to prevent damage during over current,
and a second optical link provides a fully isolated fault
status feedback signal for the microcontroller. A built
in “watchdog” circuit, UVLO monitors the power stage
supply voltage to prevent IGBT caused by insufficient
gate drive voltages. This integrated IGBT gate driver is
designed to increase the performance and reliability of
a motor drive without the cost, size, and complexity of a
discrete design.
Two light emitting diodes and two integrated circuits
housed in the same SO-16 package provide the input
control circuitry, the output power stage, and two optical
channels. The output Detector IC is designed manufactured on a high voltage BiCMOS/Power DMOS process.
The forward optical signal path, as indicated by LED1,
transmits the gate control signal. The return optical signal
path, as indicated by LED2, transmits the fault status
feedback signal.
Under normal operation, the LED1 directly controls the
IGBT gate through the isolated output detector IC, and
LED2 remains off. When an IGBT fault is detected, the
output detector IC immediately begins a “soft” shutdown
sequence, reducing the IGBT current to zero in a controlled manner to avoid potential IGBT damage from
inductive over voltages. Simultaneously, this fault status
is transmitted back to the input via LED2, where the fault
latch disables the gate control input and the active low
fault output alerts the microcontroller.
During power-up, the Under Voltage Lockout (UVLO)
feature prevents the application of insufficient gate
voltage to the IGBT, by forcing the ACPL-332J’s output
low. Once the output is in the high state, the DESAT (VCE)
detection feature of the ACPL-332J provides IGBT protection. Thus, UVLO and DESAT work in conjunction to
provide constant IGBT protection.
18
13
VCC2
UVLO
ANODE
CATHODE
6, 7
D
R
I
V
E
R
5, 8
LED1
11
14
VOUT
DESAT
DESAT
9, 12
SHIELD
VEE
VCLAMP
VCC1
FAULT
VS
2
3
10
LED2
16
1, 4
15
SHIELD
VCLAMP
VE
VLED
Figure 35. Block Diagram of ACPL-332J
Recommended Application Circuit
The ACPL-332J has an LED input gate control, and an
open collector fault output suitable for wired ‘OR’ applications. The recommended application circuit shown
in Figure 36 illustrates a typical gate drive implementation using the ACPL-332J. The following describes about
driving IGBT. However, it is also applicable to MOSFET.
Depending upon the MOSFET or IGBT gate threshold
requirements, designers may want to adjust the VCC
supply voltage (Recommended VCC = 17.5V for IGBT and
12.5V for MOSFET).
The two supply bypass capacitors (0.1 μF) provide the
large transient currents necessary during a switching
transition. Because of the transient nature of the
charging currents, a low current (5mA) power supply
suffices. The desaturation diode DDESAT 600V/1200V
fast recovery type, trr below 75ns (e.g. ERA34-10) and
capacitor CBLANK are necessary external components for
the fault detection circuitry. The gate resistor RG serves to
limit gate charge current and controls the IGBT collector
voltage rise and fall times. The open collector fault
output has a passive pull-up resistor RF (2.1 kΩ) and a
1000 pF filtering capacitor, CF. A 47 kΩ pull down resistor
RPULL-DOWN on VOUT provides a predictable high level
output voltage (VOH). In this application, the IGBT gate
driver will shut down when a fault is detected and fault
reset by next cycle of IGBT turn on. Application notes are
mentioned at the end of this datasheet.
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
VE 16
0.1μF
+
_
VLED 15
RF
0.1μF
DESAT 14
CBLANK
100 Ω
DDESAT
RG
+
_
CF
VCC2 13
VEE 12
VOUT 11
Q1
R
+
_
VCLAMP 10
VEE
+ HVDC
+
VCE
-
RPULL--DOWN
9
Q2
+
VCE
-
3-PHASE
AC
- HVDC
Figure 36. Recommended application circuit (Single Supply) with desaturation detection and active Miller Clamp
Description of Operation
Normal Operation
During normal operation, VOUT of the ACPL-332J is controlled by input LED current IF (pins 5, 6, 7 and 8), with
the IGBT collector-to-emitter voltage being monitored
through DESAT. The FAULT output is high. See Figure 37.
activated is an internal feedback channel which brings
the FAULT output low for the purpose of notifying the
micro-controller of the fault condition.
Fault Reset
Fault Condition
The DESAT pin monitors the IGBT Vce voltage. When the
voltage on the DESAT pin exceeds 6.5 V while the IGBT is
on, VOUT is slowly brought low in order to “softly” turn-off
the IGBT and prevent large di/dt induced voltages. Also
Once fault is detected, the output will be muted for 5 μs
(minimum). All input LED signals will be ignored during
the mute period to allow the driver to completely soft
shut-down the IGBT. The fault mechanism can be reset by
the next LED turn-on after the 5us (minimum) mute time.
See Figure 37.
t DESAT(LOW)
IF
Reset done
during the next
LED turn-on
6.5V
V DESAT
t BLANK
t DESAT(10%)
90%
VOUT
10%
t DESAT(90%)
FAULT
50%
t DESAT(FAULT)
t DESAT(MUTE)
Figure 37. Fault Timing diagram
19
t RESET(FAULT)
50%
Output Control
Slow IGBT Gate Discharge during Fault Condition
The outputs (VOUT and FAULT) of the ACPL-332J are controlled by the combination of IF, UVLO and a detected
IGBT Desat condition. Once UVLO is not active (VCC2 VE > VUVLO), VOUT is allowed to go high, and the DESAT
(pin 14) detection feature of the ACPL-332J will be the
primary source of IGBT protection. Once VCC2 is increased
from 0V to above VUVLO+, DESAT will remain functional
until VCC2 is decreased below VUVLO-. Thus, the DESAT
detection and UVLO features of the ACPL-332J work in
conjunction to ensure constant IGBT protection.
When a desaturation fault is detected, a weak pull-down
device in the ACPL-332J output drive stage will turn on
to ‘softly’ turn off the IGBT. This device slowly discharges
the IGBT gate to prevent fast changes in drain current
that could cause damaging voltage spikes due to lead
and wire inductance. During the slow turn off, the large
output pull-down device remains off until the output
voltage falls below VEE + 2 Volts, at which time the large
pull down device clamps the IGBT gate to VEE.
DESAT Fault Detection Blanking Time
Desaturation Detection and High Current Protection
The ACPL-332J satisfies these criteria by combining a
high speed, high output current driver, high voltage
optical isolation between the input and output, local
IGBT desaturation detection and shut down, and an
optically isolated fault status feedback signal into a single
16-pin surface mount package.
The fault detection method, which is adopted in the
ACPL-332J, is to monitor the saturation (collector)
voltage of the IGBT and to trigger a local fault shutdown
sequence if the collector voltage exceeds a predetermined threshold. A small gate discharge device slowly
reduces the high short circuit IGBT current to prevent
damaging voltage spikes. Before the dissipated energy
can reach destructive levels, the IGBT is shut off. During
the off state of the IGBT, the fault detect circuitry is simply
disabled to prevent false ‘fault’ signals.
The alternative protection scheme of measuring IGBT
current to prevent desaturation is effective if the short
circuit capability of the power device is known, but
this method will fail if the gate drive voltage decreases
enough to only partially turn on the IGBT. By directly
measuring the collector voltage, the ACPL-332J limits the
power dissipation in the IGBT even with insufficient gate
drive voltage. Another more subtle advantage of the desaturation detection method is that power dissipation in
the IGBT is monitored, while the current sense method
relies on a preset current threshold to predict the safe
limit of operation. Therefore, an overly conservative over
current threshold is not needed to protect the IGBT.
The DESAT fault detection circuitry must remain disabled
for a short time period following the turn-on of the IGBT
to allow the collector voltage to fall below the DESAT
threshold. This time period, called the DESAT blanking
time is controlled by the internal DESAT charge current,
the DESAT voltage threshold, and the external DESAT
capacitor.
The nominal blanking time is calculated in terms of
external capacitance (CBLANK), FAULT threshold voltage
(VDESAT ), and DESAT charge current (ICHG) as tBLANK =
CBLANK x VDESAT / ICHG. The nominal blanking time with
the recommended 100pF capacitor is 100pF * 6.5 V / 240
μA = 2.7 μsec.
The capacitance value can be scaled slightly to adjust the
blanking time, though a value smaller than 100 pF is not
recommended. This nominal blanking time represents
the longest time it will take for the ACPL-332J to respond
to a DESAT fault condition. If the IGBT is turned on while
the collector and emitter are shorted to the supply rails
(switching into a short), the soft shut-down sequence
will begin after approximately 3 μsec. If the IGBT collector
and emitter are shorted to the supply rails after the IGBT
is already on, the response time will be much quicker due
to the parasitic parallel capacitance of the DESAT diode.
The recommended 100pF capacitor should provide
adequate blanking as well as fault response times for
most applications.
IF
UVLO(VCC2-VE)
DESAT Function
Pin 3 (FAULT) Output
VOUT
ON
Active
Not Active
High
Low
ON
Not Active
Active (with DESAT fault)
Low (FAULT)
Low
ON
Not Active
Active (no DESAT fault)
High (or no fault)
High
OFF
Active
Not Active
High
Low
OFF
Not Active
Not Active
High
Low
20
Under Voltage Lockout
The ACPL-332J Under Voltage Lockout (UVLO) feature is
designed to prevent the application of insufficient gate
voltage to the IGBT by forcing the ACPL-332J output
low during power-up. IGBTs typically require gate
voltages of 15 V to achieve their rated VCE(ON) voltage.
At gate voltages below 13 V typically, the VCE(ON) voltage
increases dramatically, especially at higher currents.
At very low gate voltages (below 10 V), the IGBT may
operate in the linear region and quickly overheat.
The UVLO function causes the output to be clamped
whenever insufficient operating supply (VCC2) is applied.
Once VCC2 exceeds VUVLO+ (the positive-going UVLO
threshold), the UVLO clamp is released to allow the
device output to turn on in response to input signals. As
VCC2 is increased from 0 V (at some level below VUVLO+),
first the DESAT protection circuitry becomes active. As
VCC2 is further increased (above VUVLO+), the UVLO clamp
is released. Before the time the UVLO clamp is released,
the DESAT protection is already active. Therefore, the
UVLO and DESAT Fault detection feature work together
to provide seamless protection regardless of supply
voltage (VCC2).
Active Miller Clamp
A Miller clamp allows the control of the Miller current
during a high dV/dt situation and can eliminate the use
of a negative supply voltage in most of the applications.
During turn-off, the gate voltage is monitored and the
clamp output is activated when gate voltage goes below
2V (relative to VEE). The clamp voltage is VOL+2.5V typ
for a Miller current up to 1100mA. The clamp is disabled
when the LED input is triggered again.
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
RG
DESAT Pin Protection Resistor
The freewheeling of flyback diodes connected across
the IGBTs can have large instantaneous forward voltage
transients which greatly exceed the nominal forward
voltage of the diode. This may result in a large negative
voltage spike on the DESAT pin which will draw substantial current out of the driver if protection is not used. To
limit this current to levels that will not damage the driver
IC, a 100 ohm resistor should be inserted in series with
the DESAT diode. The added resistance will not alter the
DESAT threshold or the DESAT blanking time.
VS
2
VCC1
Other Recommended Components
3
FAULT
The application circuit in Figure 36 includes an output
pull-down resistor, a DESAT pin protection resistor, a
FAULT pin capacitor, and a FAULT pin pullup resistor and
Active Miller Clamp connection.
4
VS
5
CATHODE
6
During the output high transition, the output voltage
rapidly rises to within 3 diode drops of VCC2. If the output
current then drops to zero due to a capacitive load, the
output voltage will slowly rise from roughly VCC2-3(VBE)
to VCC2 within a period of several microseconds. To limit
the output voltage to VCC2-3(VBE), a pull-down resistor,
RPULL-DOWN between the output and VEE is recommended to sink a static current of several 650 μA while the
output is high. Pull-down resistor values are dependent
on the amount of positive supply and can be adjusted
according to the formula, Rpull-down = [VCC2-3 * (VBE)] /
650 μA.
21
RPULL-DOWN
Figure 38. Output pull-down resistor.
1
Output Pull-Down Resistor
VCC
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
100pF
100 Ω
DDESAT
VCC
RG
Figure 39. DESAT pin protection.
Capacitor on FAULT Pin for High CMR
Rapid common mode transients can affect the fault pin
voltage while the fault output is in the high state. A 1000
pF capacitor should be connected between the fault pin
and ground to achieve adequate CMOS noise margins at
the specified CMR value of 50 kV/μs.
Pull-up Resistor on FAULT Pin
The FAULT pin is an open collector output and therefore
requires a pull-up resistor to provide a high-level signal.
Also the FAULT output can be wire ‘OR’ed together with
other types of protection (e.g. over-temperature, overvoltage, over-current ) to alert the microcontroller.
Other Possible Application Circuit (Output Stage)
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
0.1μF 0.1μF
0.1μF
Optional R2
RG
Optional R1
+_
+ HVDC
Q1
RPULL-DOWN
+_
*
Q2
+
VCE
-
+
VCE
-
3-PHASE
AC
- HVDC
Figure 40. IGBT drive with negative gate drive, external booster and desaturation detection (VCLAMP should be connected to VEE when it is not used)
VCLAMP is used as secondary gate discharge path. * indicates component required for negative gate drive topology
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
0.1μF 0.1μF
0.1μF
Optional R2
RG
Optional R1
+_
+ HVDC
Q1
RPULL-DOWN
+_
*
Q2
+
VCE
-
+
VCE
-
R3
Figure 41. Large IGBT drive with negative gate drive, external booster. VCLAMP control secondary discharge path for higher power application.
22
3-PHASE
AC
- HVDC
Thermal Model
The ACPL-332J is designed to dissipate the majority of
the heat through pins 1, 4, 5 & 8 for the input IC and pins
9 & 12 for the output IC. (There are two VEE pins on the
output side, pins 9 and 12, for this purpose.) Heat flow
through other pins or through the package directly into
ambient are considered negligible and not modeled
here.
In order to achieve the power dissipation specified in
the absolute maximum specification, it is imperative
that pins 5, 9, and 12 have ground planes connected to
them. As long as the maximum power specification is
not exceeded, the only other limitation to the amount
of power one can dissipate is the absolute maximum
junction temperature specification of 125°C. The junction
temperatures can be calculated with the following
equations:
Tji = Pi (θi5 + θ5A) + TA
Tjo = Po (θo9,12 + θ9,12A) + TA
Tjo
Tji
Tl9, 12 = 30°C/W
TI1 = 60°C/W
TP9, 12
TP1
T1A = 50°C/W*
T9, 12A = 50°C/W*
TA
where Pi = power into input IC and Po = power into
output IC. Since θ5A and θ9,12A are dependent on PCB
layout and airflow, their exact number may not be
available. Therefore, a more accurate method of calculating the junction temperature is with the following
equations:
Tji = Pi θi5 + TP5
Tjo = Po θo9,12 + TP9,12
These equations, however, require that the pin 5 and pins
9, 12 temperatures be measured with a thermal couple
on the pin at the ACPL-332J package edge.
If the calculated junction temperatures for the thermal
model in Figure 42 is higher than 125°C, the pin temperature for pins 9 and 12 should be measured (at the
package edge) under worst case operating environment
for a more accurate estimate of the junction temperatures.
Tji = junction temperature of input side IC
Tjo = junction temperature of output side IC
TP5 = pin 5 temperature at package edge
TP9,12 = pin 9 and 12 temperature at package edge
θI5 = input side IC to pin 5 thermal resistance
θo9,12 = output side IC to pin 9 and 12 thermal resistance
θ5A = pin 5 to ambient thermal resistance
θ9,12A = pin 9 and 12 to ambient thermal resistance
*The θ5A and θ9,12A values shown here are for PCB layouts with reasonable air flow.
This value may increase or decrease by a factor of 2 depending on PCB layout and/or airflow.
Figure 42. ACPL-332J Thermal Model
Related Application Notes
AN5314 – Active Miller Clamp
AN5324 - Desaturation Fault Detection
AN5315 – “Soft” Turn-off Feature
AN1043 – Common-Mode Noise : Sources and Solutions
AN02-0310EN - Plastics Optocoupler Product ESD and Moisture Sensitivity
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved.
AV02-0120EN - October 25, 2012