BSS138W Main Product Characteristics: VDSS 50V RDS(on) 1.4Ω (typ.) ID 0.2A SOT-323 Marking and Pin Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ESD Rating：1000V HBM 150℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 0.2 IDM Pulsed Drain Current② 0.8 PD @TC = 25°C Power Dissipation③ 0.2 W VDS Drain-Source Voltage 50 V VGS Gate-to-Source Voltage ± 20 V -55 to +150 °C TJ TSTG Operating Junction and Storage Temperature Range A Thermal Resistance Symbol Characteristics RθJA Junction-to-ambient (t ≤ 10s) ④ ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Typ. Max. Units — 625 ℃/W Version: 1.1 page 1 of 6 BSS138W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Min. Typ. Max. Units 50 — — V — 1.4 3.5 — 1.57 6 Gate threshold voltage 0.7 — 1.5 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 50V,VGS = 0V IGSS Gate-to-Source forward leakage — — ±100 nA VGS=±5V,VDS=0V — — ±10 uA VGS=±20V,VDS=0V td(on) Turn-on delay time — — 20 td(off) Turn-Off delay time — — 20 ID=0.2A,RGEN=50Ω Ciss Input capacitance — 30 — VGS = 0V Coss Output capacitance — 7.8 — Crss Reverse transfer capacitance — 3.1 — Ω ns pF Conditions VGS = 0V, ID = 250μA VGS=10V, ID=0.22A VGS=4.5V, ID=0.22A VGS=10V, VDS=30V, VDS = 10V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage ©Silikron Semiconductor CO., LTD. Min. Typ. Max. Units — — 0.2 A — — 0.8 A — — 1.4 V 2013.11.05 www.silikron.com Version: 1.1 Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=0.22A, VGS=0V page 2 of 6 BSS138W Test circuits and Waveforms EAS Test Circuit Gate charge test circuit Switching Time Test Circuit Switching Waveforms Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 3 of 6 BSS138W Mechanical Data： SOT-323(SC-70) PACKAGE OUTLINE DIMENSION ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 4 of 6 BSS138W Ordering and Marking Information Device Marking: 138W Package (Available) SOT-323 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/ Carton Box SOT-323 3000 10 30000 360000 12 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 5 of 6 BSS138W ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2013.11.05 www.silikron.com Version: 1.1 page 6 of 6