Silikron BSS138W Advanced mosfet process technology Datasheet

BSS138W
Main Product Characteristics:
VDSS
50V
RDS(on)
1.4Ω (typ.)
ID
0.2A
SOT-323
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits:


Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
ESD Rating:1000V HBM
150℃ operating temperature




Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
0.2
IDM
Pulsed Drain Current②
0.8
PD @TC = 25°C
Power Dissipation③
0.2
W
VDS
Drain-Source Voltage
50
V
VGS
Gate-to-Source Voltage
± 20
V
-55 to +150
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characteristics
RθJA
Junction-to-ambient (t ≤ 10s) ④
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Typ.
Max.
Units
—
625
℃/W
Version: 1.1
page 1 of 6
BSS138W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Min.
Typ.
Max.
Units
50
—
—
V
—
1.4
3.5
—
1.57
6
Gate threshold voltage
0.7
—
1.5
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
1
μA
VDS = 50V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
±100
nA
VGS=±5V,VDS=0V
—
—
±10
uA
VGS=±20V,VDS=0V
td(on)
Turn-on delay time
—
—
20
td(off)
Turn-Off delay time
—
—
20
ID=0.2A,RGEN=50Ω
Ciss
Input capacitance
—
30
—
VGS = 0V
Coss
Output capacitance
—
7.8
—
Crss
Reverse transfer capacitance
—
3.1
—
Ω
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V, ID=0.22A
VGS=4.5V, ID=0.22A
VGS=10V, VDS=30V,
VDS = 10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
©Silikron Semiconductor CO., LTD.
Min.
Typ.
Max.
Units
—
—
0.2
A
—
—
0.8
A
—
—
1.4
V
2013.11.05
www.silikron.com
Version: 1.1
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=0.22A, VGS=0V
page 2 of 6
BSS138W
Test circuits and Waveforms
EAS Test Circuit
Gate charge test circuit
Switching Time Test Circuit
Switching Waveforms
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 3 of 6
BSS138W
Mechanical Data:
SOT-323(SC-70) PACKAGE OUTLINE DIMENSION
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 4 of 6
BSS138W
Ordering and Marking Information
Device Marking: 138W
Package (Available)
SOT-323
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tape
Tapes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/
Carton
Box
SOT-323
3000
10
30000
360000
12
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 5 of 6
BSS138W
ATTENTION:
■
■
■
■
■
■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
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Consult with your Silikron representative nearest you before using any Silikron products described or contained
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even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
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©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
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