APT40GT60BR 600V, 80A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO -24 7 Features • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Switching to 150KHz • RoHS Compliant • Ultra Low Leakage Current G C E C G E All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 80 IC2 Continuous Collector Current @ TC = 105°C 40 ICM Pulsed Collector Current 1 160 SSOA PD TJ, TSTG Unit Volts Switching Safe Operating Area @ TJ = 150°C Amps 160A @ 600V Total Power Dissipation Operating and Storage Junction Temperature Range 345 Watts -55 to 150 °C Static Electrical Characteristics Min Typ Max V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) 600 - - VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 500μA, Tj = 25°C) 3 4 5 Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C) 1.6 2.15 2.5 Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C) - - 2.8 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 - - 80 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 - - 2000 Gate-Emitter Leakage Current (VGE = ±20V) - - 100 VCE(ON) ICES IGES Volts μA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Unit nA 052-6222 Rev D 3 - 2012 Symbol Characteristic / Test Conditions Dynamic Characteristic Symbol APT40GT60BR Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf Min Typ Max - 2190 - - 220 - - 130 - - 8.0 - VGE = 15V - 200 - VCE= 300V - 12 - IC = 40A - 86 - TJ = 150°C, RG = 5Ω , VGE = 15V, L 160 VGE = 0V, VCE = 25V 3 f = 1MHz Gate Charge Gate-Collector Charge Switching Safe Operating Area = 100μH, VCE= 600V Current Rise Time Turn-Off Delay Time 12 - Inductive Switching (25°C) - 36 - VCC = 400V - 124 - - 55 - RG = 5Ω - - - TJ = +25°C - 945 - VGE = 15V Current Fall Time IC = 40A Eon1 Turn-On Switching Energy 4 Eon2 Turn-On Switching Energy 5 Eoff Turn-Off Switching Energy 6 - 828 - td(on) Turn-On Delay Time - 12 - Inductive Switching (125°C) - 33 - Turn-Off Delay Time VCC = 400V - 165 - Current Fall Time VGE = 15V - 58 - Turn-On Switching Energy 4 IC = 40A - - Eon2 Turn-On Switching Energy RG = 5Ω - 5 - 1342 - Eoff Turn-Off Switching Energy 6 - 1150 - tr td(off) tf Eon1 Current Rise Time TJ = +125°C pF V nC A - Turn-On Delay Time Unit ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction to Case (IGBT) - - 0.36 RθJC Junction to Case (DIODE) - - N/A WT Package Weight - 6.1 - g - - 10 in·lbf - - 1.1 N·m 2500 - - Volts °C/W Torque Terminals and Mounting Screws VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 052-6222 Rev D 3 - 2012 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves GE 15V = 15V TJ= 125°C TJ= 25°C TJ= 55°C VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) TJ= 25°C TJ= 125°C TJ= -55°C IC = 40A IC = 200A VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 80A 10V 9V 8V 7V 6V I = 40A C T = 25°C J VCE = 120V VCE = 300V VCE = 480V GATE CHARGE (nC) FIGURE 4, Gate charge VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 11V VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250μs PULSE TEST<0.5 % DUTY CYCLE 13V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) V APT40GT60BR VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage IC = 80A IC = 40A IC = 20A VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature TC, Case Temperature (°C) FIGURE 8, DC Collector Current vs Case Temperature 052-6222 Rev D 3 - 2012 1.05 IC, DC COLLECTOR CURRENT (A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 APT40GT60BR VGE = 15V VCE = 400V TJ = 25°C, or 125°C RG = 5Ω L = 100μH td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) Typical Performance Curves ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current VGE =15V,TJ=125°C VGE =15V,TJ=25°C VCE = 400V RG = 5Ω L = 100μH ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current RG = 5Ω, L = 100μH, VCE = 400V tr, FALL TIME (ns) tr, RISE TIME (ns) RG = 5Ω, L = 100μH, VCE = 400V TJ = 25°C, VGE = 15V TJ = 25 or 125°C,VGE = 15V TJ = 125°C, VGE = 15V ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current V = 400V CE V = +15V GE R = 5Ω G TJ = 125°C TJ = 25°C EOFF, TURN OFF ENERGY LOSS (μJ) Eon2, TURN ON ENERGY LOSS (μJ) ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current V = 400V CE V = +15V GE T = 125°C Eon2,80A J Eoff,80A Eoff,40A Eon2,40A Eoff,20A Eon2,20A RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance G TJ = 125°C TJ = 25°C ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (μJ) SWITCHING ENERGY LOSSES (μJ) 052-6222 Rev D 3 - 2012 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current V = 400V CE V = +15V GE R = 5Ω V = 400V CE V = +15V GE R = 5Ω G Eon2,80A Eoff,80A Eon2,40A Eoff,40A Eon2,20A Eoff,20A TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature Typical Performance Curves APT40GT60BR IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) Cies Coes Cres VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area D = 0.9 0.7 0.5 Note: P DM ZθJC, THERMAL IMPEDANCE (°C/W) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 0.3 t1 t2 t 0.1 0.05 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE .07172 .1434 .1451 Dissipated Powe r (Watts ) .00157 .0040 0.1270 Z EXT are the external therma l impedances: Case to sink, sink to ambient, etc. Set to zero when modeling onl y the case to junction. FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 1.0Ω f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 75°C G IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 052-6222 Rev D 3 - 2012 T C (°C) Z EXT T J (°C) FMAX, OPERATING FREQUENCY (kHz) RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration APT40GT60BR 10% td(on) Gate Voltage APT30DQ60 TJ = 125°C tr Collector Current 90% V CE IC V CC 10% 5% 5% CollectorVoltage A Switching Energy D.U.T. Figure 21, Inductive Switching Test Circui t Figure 22, Turn-on Switching Waveforms and Definitions 90% TJ = 125°C Gate Voltage td(off ) tf 10% 0 Collector Current CollectorVoltage Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 052-6222 Rev D 3 - 2012 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) Gate Collector Emitter 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches )