MPSA05 MPSA06 Driver NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC MPSA05 60 60 MPSA06 80 80 4.0 500 Unit Vdc Vdc Vdc mAdc Total Device Dissipation TA=25 C PD 0.625 W Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) MPSA05 MPSA06 V(BR)CEO 60 80 Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) MPSA05 MPSA06 V(BR)CBO Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCE= 50 Vdc, IB =0) MPSA05 (VCE= 60 Vdc, IB =0) MPSA06 Collector Cutoff Current (VCE= 60 Vdc, IB =0) MPSA05 (VCE= 80 Vdc, IB =0) MPSA06 Emitter Cutoff Current (VEB= 3.0Vd c, IC =0) WEITRON http://www.weitron.com.tw Max Unit - Vdc 60 80 - Vdc 4.0 - Vdc ICE0 - 0.1 uAdc ICBO - 0.1 uAdc IEBO - 0.1 uAdc V(BR)EBO MPSA05 MPSA06 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min hFE (1) 100 - Max TYP Unit ON CHARACTERISTICS DC Current Gain (IC= 100 mAdc, VCE=1.0 Vdc) - - Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 10 mAdc) VCE(sat) - - 0.25 Vdc Base-Emitter Saturation Voltage (IC= 100 mAdc, IB= 10 mAdc) VBE(sat) - - 1.2 Vdc fT 100 - - MHz 300 200 80 TJ = 25 C 60 VCE = 2.0 V TJ = 25 C 40 C, CAPACITANCE (pF) f T , CURRENT-GAIN - BANDWIDTH PRODUCT(MHz) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 2.0 Vdc, f=100 MHz) 100 70 50 Cibo 20 10 8.0 Cobo 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) F IG 1. C urrent-G ain B andwidth P roduc t WEITRON http://www.weitron.com.tw 200 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 VR , REVERSE VOL TAGE (VOLTS) F IG 2. C apac itanc e 20 50 100 MPSA05 MPSA06 1.0 400 TJ = 25 C TJ = 125 C 0.8 200 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN VCE = 1.0 V 25 C -55 C 100 80 VBE(sat) @ I C/IB = 10 0.6 VBE(on) @ V CE = 1.0 V 0.4 0.2 60 VCE(sat) @ I C/IB = 10 40 0.5 1.0 10 2.0 3.0 5.0 20 30 50 100 200 300 500 0 0.5 1.0 2.0 1.0 TJ = 25 C IC = 50 mA IC = 250 mA IC = 100 mA IC = 500 mA 0.6 0.4 0.2 0 IC = 10 mA 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) F IG 5. C ollec tor S aturation R egion WEITRON http://www.weitron.com.tw 10 20 50 100 200 500 F IG 4. " ON" Voltages R VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) F IG 3. DC C urrent G ain 0.8 5.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 50 -0.8 -1.2 -1.6 R VB for VBE -2.0 -2.4 -2.8 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) F IG 6. B as e-E mitter Temperature C oeffic ient 500 MPSA05 MPSA05 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50