TSC BYG23MR3 High efficient surface mount rectifier Datasheet

BYG23M
Taiwan Semiconductor
CREAT BY ART
FEATURES
High Efficient Surface Mount Rectifiers
- Glass passivated junction chip.
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 available
TYPICAL APPLICATION
DO-214AC (SMA)
The superior avalanche capability of BYG23M is specially
suited for free-wheeling, clamping, snubbering,
demagnetization in power supplies and other power switching applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.064 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
BYG23M
UNIT
Maximum repetitive peak reverse voltage
VRRM
1000
V
Maximum RMS voltage
VRMS
700
V
Maximum DC blocking voltage
VDC
1000
V
Maximum average forward rectified current (@TA=65°C)
IF(AV)
1.5
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
VF
1.7
V
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
TJ=25°C
TJ=100°C
TJ=125°C
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ) TA=25℃, I(BR)R =1.23A
1
IR
μA
15
50
ERSM
30
Maximum reverse recovery time (Note 2)
trr
65
ns
Typical junction capacitance (Note 3)
CJ
15
pF
RθJA
70
TJ
- 55 to +150
O
C
- 55 to +150
O
C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
TSTG
mJ
O
C/W
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.
Document Number: DS_D1411087
Version: B14
BYG23M
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
PACKAGE
(Note 1)
PACKING
R3
SMA
1,800 / 7" Plastic reel
R2
SMA
7,500 / 13" Paper reel
M2
SMA
7,500 / 13" Plastic reel
Folded SMA
1,800 / 7" Plastic reel
Folded SMA
7,500 / 13" Paper reel
F4
Folded SMA
7,500 / 13" Plastic reel
E3
Clip SMA
1,800 / 7" Plastic reel
E2
Clip SMA
7,500 / 13" Plastic reel
PACKING CODE
SUFFIX
F3
BYG23M
G
F2
Note 1: Package "SMA" and "Folded SMA" are AEC-Q101 qualified, Clip SMA doesn't.
EXAMPLE
PREFERRED
PART NO.
PACKING CODE
BYG23M R3
BYG23M
R3
BYG23M R3G
BYG23M
R3
PART NO.
PACKING CODE
DESCRIPTION
SUFFIX
AEC-Q101 qualified
AEC-Q101 qualified
Green compound
G
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 MAXIMUM AVERAGE FORWARD CURRENT
DERATING
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT (A)
1.5
1
0.5
0
0
25
50
75
100
AMBIENT TEMPERATURE
125
150
INSTANTANEOUS REVERSE CURRENT(μA)
100
2
10
TJ=125°C
1
TJ=25°C
0.1
0
(oC)
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 4 TYPICAL JUNCTION CAPACITANCE
70
50
JUNCTION CAPACITANCE (pF)
PEAK FORWARD SURGE URRENT (A)
20
8.3ms Single Half Sine Wave
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
Document Number: DS_D1411087
100
f=1.0MHz
Vslg=50mVp-p
60
50
40
30
20
10
0
0.1
1
10
100
REVERSE VOLTAGE (V)
Version: B14
BYG23M
Taiwan Semiconductor
FIG. 5 TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
10
1
0.1
0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
FORWARD VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
Unit (mm)
DIM.
A
Unit (inch)
Min
Max
Min
Max
1.27
1.58
0.050
0.062
B
4.06
4.60
0.160
0.181
C
2.29
2.83
0.090
0.111
D
1.99
2.50
0.078
0.098
E
0.90
1.41
0.035
0.056
F
4.95
5.33
0.195
0.210
G
0.10
0.20
0.004
0.008
H
0.15
0.31
0.006
0.012
SUGGESTED PAD LAYOUT
Symbol
Unit (mm)
Unit (inch)
A
1.68
0.066
B
1.52
0.060
C
3.93
0.155
D
2.41
0.095
E
5.45
0.215
MARKING DIAGRAM
P/N =
Specific Device Code
G=
Green Compound
YW =
Date Code
F=
Factory Code
Document Number: DS_D1411087
Version: B14
BYG23M
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1411087
Version: B14
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