FDME820NZT N-Channel PowerTrench® MOSFET 20 V, 9 A, 18 mΩ Features General Description Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Applications Free from halogenated compounds and antimony oxides Li-lon Battery Pack HBM ESD protection level >2.5 kV (Note3) Baseband Switch RoHS Compliant Load Switch DC-DC Conversion G D Pin 1 D D D D D G S S D D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 20 Units V ±12 V 9 40 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 70 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 190 °C/W Package Marking and Ordering Information Device Marking 8T Device FDME820NZT ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDME820NZT N-Channel PowerTrench® MOSFET April 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±10 μA 1.0 V 20 V 20 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -3 rDS(on) Drain to Source On Resistance 0.5 0.8 mV/°C VGS = 4.5 V, ID = 9 A 14 VGS = 2.5 V, ID = 7.5 A 17 24 VGS = 1.8 V, ID = 7 A 26 32 VGS = 4.5 V, ID = 9 A , TJ = 125 °C 19 24 VDS = 10 V, VGS = 0 V, f = 1 MHz 865 pF 203 pF 190 pF 1.0 Ω 18 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics td(on) Turn-On Delay Time 9 ns tr Rise Time 5 ns td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 10 V, ID = 4 A VGS = 4.5 V, RGEN = 2 Ω 19 ns 5 ns VDD = 4.2 V, ID = 3 A, VGS = 4.3 V 8.0 nC VDD = 4.2 V, ID = 3 A, VGS = 4.5 V 8.5 nC 1.4 nC 3.2 nC VDD = 10 V, ID = 9 A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.6 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 9 A (Note 2) 0.8 1.2 IF = 9 A, di/dt = 100 A/us V V 18 ns 4 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 70 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 190 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C 2 www.fairchildsemi.com FDME820NZT N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 40 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3 V VGS = 2.5 V 30 VGS = 1.8 V 20 VGS = 2 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 VGS = 1.5 V 0 0 0.5 1.0 1.5 2.0 4 VGS = 1.8 V VGS = 2 V 3 2 VGS = 3 V 0 2.5 Figure 1. On Region Characteristics VGS = 4.5 V 0 10 20 ID, DRAIN CURRENT (A) 40 80 ID = 9 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 ID = 9 A 40 TJ = 125 oC 20 TJ = 25 oC -50 -25 0 25 50 75 0 0.9 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.8 2.7 3.6 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 1000 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 2.5 V 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.6 -75 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 1.5 V VDS = 5 V 30 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 0.0 0.5 1.0 1.5 2.0 2.5 100 TJ = 150 oC 10 TJ = 25 oC 1 0.1 TJ = -55 oC 0.01 0.001 0 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDME820NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = 9 A 3.6 1000 VDD = 8 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 2.7 VDD = 10 V 1.8 VDD = 12 V Ciss Coss 0.9 0.0 f = 1 MHz VGS = 0 V 0 3 6 9 100 0.1 12 1 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage -1 20 10 Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC -2 VGS = 0 V 10 -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 TJ = 25 oC -8 10 -9 10 -10 1 0.001 0.01 0.1 1 10 10 100 0 3 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) 100 us 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms SINGLE PULSE TJ = MAX RATED 100 ms 1s 10 s DC RθJA = 190 oC/W 0.01 0.01 12 15 18 1000 10 0.1 9 Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 1 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss TA = 25 oC 0.1 1 10 100 TA = 25 oC 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C SINGLE PULSE RθJA = 190 oC/W 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDME820NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 190 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C 5 www.fairchildsemi.com FDME820NZT N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 0.65 0.10 C 1.60 2X 6 1.60 4 No vias or traces allowed in this area 0. 55 1.90 0.40 0.10 C 1 2X P IN #1 IDENT 0.15 0.35 0. 30 3 0. 50 TOP VIEW RECOMM ENDED LAND PATTERN OPT 1 0.65 0.15 0. 35 0.20 0. 30 0.55 MAX 0.10 C 0. 08 C (0.15) 6 C 0.05 0.00 4 No vias or traces allowed in t his area 0.62 1.90 SIDE VIEW 0.55 (0.40) 1 3 0. 50 RECOMM ENDED LAND PATTERN OPT 2 (0. 125) (0.40) (0.20) 0.72 0.62 1 3 0. 670 0. 570 (0.55) 6 NOTES: A. DOES NOT FULLY CON FORM TO JEDEC REGISTRATION B. DIMEN SIONS ARE IN MILLIMETERS. C. D IMENSIONS AND TOL ERANCES PER ASME Y1 4.5M, 1 994. D. LAND PATTERN RECOMMEN DATION IS BASED ON FSC D ESIGN ONLY E. DRAWING FI LENAME: MKT-UMLP06Frev4 0.30 2X 0.20 4 1.150 1.050 0.30 2X 0.20 0.50 1.00 0.10 0.05 C A B C BOTTOM VIEW ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C 6 www.fairchildsemi.com FDME820NZT N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C 7 www.fairchildsemi.com FDME820NZT N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® The Power Franchise® F-PFS™ ® AccuPower™ PowerXS™ FRFET® AX-CAP™* Global Power ResourceSM Programmable Active Droop™ ® ® BitSiC Green Bridge™ QFET TinyBoost™ Green FPS™ Build it Now™ QS™ TinyBuck™ Green FPS™ e-Series™ CorePLUS™ Quiet Series™ TinyCalc™ Gmax™ CorePOWER™ RapidConfigure™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ ISOPLANAR™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ and Better™ SmartMax™ Dual Cool™ TranSiC® MegaBuck™ SMART START™ EcoSPARK® TriFault Detect™ EfficentMax™ MICROCOUPLER™ Solutions for Your Success™ TRUECURRENT®* ESBC™ MicroFET™ SPM® μSerDes™ STEALTH™ MicroPak™ ® MicroPak2™ SuperFET® SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ ® OptoHiT™ SyncFET™ FAST ® VisualMax™ Sync-Lock™ OPTOLOGIC FastvCore™ ® VoltagePlus™ ®* OPTOPLANAR FETBench™ XS™ FlashWriter® * ® FPS™