Renesas M62023P System reset ic with switch for 3v memory back-up Datasheet

M62023L/P/FP
System Reset IC with Switch for 3V Memory Back-up
REJ03D0528-0200
Rev.2.00
Jun 15, 2007
General Description
The M62023L/P/FP is a system reset IC that controls the memory backup function of an SRAM and an embedded RAM
of a microcontroller.
The IC outputs reset signals (RES/RES) to a microcontroller at power-down and power failure. It also shifts the power
supply to RAMs from main to backup, outputs a signal (CS) that invokes standby mode, and alters RAMs to backup
circuit mode.
Features
•
•
•
•
•
•
Built-in switch for selection between main power supply and backup power supply to RAMs
Small difference between input and output voltages (IOUT = 80mA, VIN=3V): 0.15V typ.
Detection voltage (power supply monitor voltage): 2.57V typ.
Chip select signal output (CS)
Two channels of reset outputs (RES/RES)
Power on reset circuit.
Application
Power supply control systems for memory of microcontroller systems in electronic equipment such as OA equipment,
industrial equipment, and home-use electronic appliances and SRAM boards with built-in backup function that require
switching between external power supply and battery.
Block Diagram
SW
VIN
3
1
VOUT
2
VBAT
8
CS
4
Ct
D1
R1
Com
Reset Circuit
R2
1.24V
RES
7
RES
5
Delay Circuit
6
GND
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 1 of 12
M62023L/P/FP
Pin Arrangement
M62023P
M62023FP
M62023L
8 CS
VOUT 1
8 CS
7 RES
VBAT 2
7 RES
6 GND
VIN 3
6 GND
5 RES
Ct 4
5 RES
(Top view)
4 Ct
3 VIN
Outline: PRDP0008AA-A (8P4) [P]
PRSP0008DE-C [FP] (recommend)
PRSP0008DA-A (8P2S-A) [FP] (not recommend for new design)
2 VBAT
1 VOUT
(Top view)
Outline: PRSS0008AA-A (8P5) [L]
Pin Description
Pin No.
Symbol
Name
1
VOUT
Power supply output
2
VBAT
Backup power supply
input
VIN and VBAT are controlled by means of an internal switch and output
through VOUT.
The pin is capable of outputting up to 100mA. Use it as VDD of CMOS
RAM and the like.
Backup power supply is connected to this pin.
If a lithium battery is used, insert a resistor in series for safety purposes.
3
4
VIN
Ct
Power supply input
Delay capacitor
connection pin
+3V input pin. Connect to a logic power supply.
A delay capacitor is connected to this pin. By connecting a capacitor, it is
possible to delay each output.
5
RES
Positive reset output
6
GND
Ground
Connect to the positive reset input of a microcontroller. The pin is
capable of flowing 1mA sink current.
Reference for all signals.
7
RES
Negative reset output
8
CS
Chip select output
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 2 of 12
Function
Connect to the negative reset input of a microcontroller. The pin is
capable of flowing 1mA sink current.
Connect to the Chip Select of RAM. The CS output is at low level in
normal state thereby letting RAM be active. Under failure or backup
condition, the CS output is set to high level, then RAM enters standby
state disabling read/write function. The pin is capable of flowing a 1mA
sink current.
M62023L/P/FP
Absolute Maximum Ratings
(Ta = 25°C, unless otherwise noted.)
Item
Symbol
Ratings
Unit
Input voltage
VIN
7
V
Output current
IOUT
100
mA
Power dissipation
Pd
800 (L) / 625 (P) / 440 (FP)
mW
Thermal derating
Conditions
Kθ
8 (L) / 6.25 (P) / 4.4 (FP)
mW/°C
Operating temperature
Topr
–20 to +75
°C
Storage temperature
Tstg
–40 to +125
°C
Ta ≥ 25°C
Electrical Characteristics
(Ta = 25°C, unless otherwise noted.)
Sysbol
Min
Typ
Max
Unit
Detection voltage
Item
VS
2.44
2.57
2.70
V
Hysteresis voltage
Circuit current
∆VS
50
—
100
1.5
200
3.0
mV
mA
—
—
6.5
0.1
10
0.2
VOH(Ct)
—
2.0
0.15
2.4
0.3
—
V
VIN = 3V *
VOL(Ct)
VOH(RES)
—
1.5
0.02
2.0
0.1
—
V
V
VIN = 2V *
1
VIN = 2V *
—
0.02
—
—
0.04
0.2
V
VIN = 3V *
VIN = 3V, Isink = 1mA
VOH(RES)
2.5
3.0
—
V
VIN = 3V *
VOL(RES)
—
—
0.02
0.04
—
0.2
V
VIN = 2V *
VIN = 2V, Isink = 1mA
VOH(CS)
1.3
2.40
1.6
2.47
—
—
V
VIN = 2V *
2
VIN = 0V, VBAT = 3V *
VOL(CS)
—
—
0.07
0.08
—
0.3
V
VIN = 3V *
VIN = 3V, Isink = 1mA
IR
—
—
—
—
±0.5
±0.5
µA
0.54
0.6
V
Difference between input and
output voltage
Ct output voltage (high level)
Ct output voltage (low level)
RES output voltage (high level)
RES output voltage (low level)
RES output voltage (high level)
RES output voltage (low level)
CS output voltage (high level)
CS output voltage (low level)
Backup Di leak current
ICC
VDROP
VOL(RES)
V
Test Conditions
VIN (At change from H→L)
∆VS = VSH – VSL
IOUT = 0mA VIN = 2V
VIN = 3V
IOUT = 50mA
VIN = 3V
IOUT = 80mA
1
1
1
1
1
2
1
VBAT = 3V
VIN = 3V
VIN = 0V
IF = 10µA
Backup Di forward direction
voltage
Delay time
VF
—
tpd
10
27
55
ms
VIN = 0V→3V, Ct = 4.7µF
Response time
td
—
5.0
25.0
µs
VIN = 3V→2V
VOPL (RES)
—
0.65
—
V
*
RES limit voltage of operation
3
Notes: 1. Regarding conditions to measure VOH and VOL, voltage values are generated by internal resistance only and
no external resistor is used.
2. These values are produced inserting an external resistor, RCS = 1MΩ, between the CS pin and GND.
3. With no external resistor (10kΩ internal resistance only).
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 3 of 12
M62023L/P/FP
Application Example
M62023
+3.0V
(Main Power Supply)
VIN
VOUT
SW
1
3
D1
CIN*1
R1
VBAT
Com
Reset Circuit
VDD
2
R2
MCU
or
CPU
8
1.24V
RES
7
5
RES
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 4 of 12
Delay Circuit
4
Battery
3V
CS
CMOS
RAM
Ct
Ct
GND
6
COUT*1
VDD
M62023L/P/FP
Configuration
<Power supply detector>
The internal reference voltage Vref is compared by means of a comparator with resistor divided voltage VR (resistordivided voltage produced by R1 and R2 from VIN).
If the input voltage is 3V, VR is set to 1.24V or higher, so the comparator output is at low level and the Ct output (Q1
collector output) is set to high level. If the input voltage drops to below 2.57V in an abnormal condition, VR becomes
below 1.24V, so the comparator output goes from low to high level and the Ct output, from high to low. The input
voltage at this point is called VSL. Next, when the input voltage, restored from abnormal state, has a rise, the
comparator output goes from high to low level and the Ct output, from low to high.
Ct output VO (Ct) (V)
The comparator used for detection has 100mV hysteresis (∆Vs), so that malfunctioning is prevented in case that the
input voltage slowly drops or VR nearly equals Vref.
3.0
∆Vs
2.0
VSL
1.0
0
VSH
2.4 2.5 2.6 2.7 2.8 2.9
Input voltage VIN (V)
<Delay Circuit>
Connecting an external capacitor to the Ct pin lets RES, RES, CS, and VOUT be delayed due to RC transient
phenomenon (electric charge).
Delay time is determined as follows.
Delay time (tpd) = Ct×R3×In
[VOH(Ct)-VOL(Ct)]
[VOH(Ct)-INV1(VTH)]
3
Note: Ct is an external capacitance.
Taking into consideration the time taken by the oscillator of microcomputer to be stable, connect a 4.7µF capacitor to
the Ct pin.
(As the response time of detection can be slowed due to internal structure depending on the rising rate of power supply,
avoid connecting a too large capacitance.)
tpd
VOH (Ct)
INV1 (Vth)
VOL (Ct)
Delayed output waveforms of Ct
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 5 of 12
M62023L/P/FP
<Schmitt trigger circuit>
Since waveforms show a gentle rise due to the RC delay circuit, INV1, INV2, and R6 constitute a Schmitt trigger circuit
to produce hysteresis so as to prevent each output from chattering.
Internal Circuit
Ct
VIN
RES
RES
4
3
5
7
Q4
VR
R1
25.6kΩ
R3
22kΩ
Com
R4
0Ω
Q1
R5
10kΩ
R8
10kΩ
R7
10kΩ
R6
47kΩ
Q2
Vref
1.24V
R11
10kΩ
INV1 INV2 INV3 INV4
INV5 INV6 INV7
INV8
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 6 of 12
INV9 R9
5kΩ
VOUT
2
VBAT
8
CS
6
GND
D1
R10
800Ω
Q3
R2
24kΩ
1
R10
22kΩ
Q5
M62023L/P/FP
Timing Chart
tpd
tpd
3V
VSH
VSL
VIN
∆Vs
0V
V1
VOUT
V2
V3
V2
V3
CS
VOL(CS)
3V
VIN(VSL)
RES
VOL(RES)
VOH(RES)
VIN(VSL)
RES
VOL(RES)
V1=VIN-VDROP
V2=VIN-VEB(SW Tr.)
V3=VBAT-VF
Input voltage
In normal operation
Output
pin
Input voltage: 3V
In failure
(instantaneous drop)
Restoration from failure
(instantaneous drop)
In backup state
Input voltage: 3V→2V
Each output varies if the input
voltage drops to VSL or under
Input voltage: 2V→3V
If the input voltage goes higher
than VSL by 100mV, each output
varies after delay produced by
the delay circuit.
Input voltage: 0V
VBAT-VF
VOUT
With SW Tr. set to ON, a
voltage (VIN-VDROP) is output.
SW Tr. is turned OFF. A voltage
(VIN-VEB) is output by the diode
between E and B of SW Tr.
SW Tr. is turned ON after delay
and a voltage (VIN-VDROP) is
output.
RES
The output level is
VOL (RES) with a logic low.
As the state shifts from a logic low
to logic high, the output level
becomes approximately equal to
the input voltage.
A logic high is maintained, and
then shifts to a logic low.
RES
The output level is VOH(RES)
with a logic high.
As the state shifts from a logic
high to logic low, the output level
becomes VOL(RES)
A logic low is maintained, and
then shifts to a logic high.
CS
The output level is VOL(CS)
with a logic low.
As the state shifts from a logic low
to logic high, the output level
becomes the voltage VIN-VEB.
A logic high is maintained, and
then shifts to a logic low.
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 7 of 12
Backup voltage: 3V
The output is a logic
high and the output
level is VBAT-VF
M62023L/P/FP
Typical Characteristics
Thermal Derating (Maximum Rating)
Power dissipation P d (mW)
1000
M62023L
800
M62023P
600
M62023FP
400
200
0
0
25
125
100
75
Ambient temperature Ta (°C)
50
Hysteresis Voltage vs .
Ambient Temperature
2.64
140
2.63
130
2.62
120
2.61
110
2.60
100
v
Detection voltage Vs (V)
Detection Voltage vs .
Ambient Temperature
2.59
90
2.58
80
2.57
70
2.56
-20 0
60
20 40 60 80 100
-20 0 20 40 60 80 100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
9
Circuit Current vs.
Ambient Temperature
4.0
Circuit Current vs.
Ambient Temperature
VIN = 2V
VIN = 3V
Circuit current Icc (mA)
Circuit current Icc (mA)
10
Tj = 25°C
8
7
6
5
4
3.5
3.0
2.5
2.0
1.5
1.0
0.5
3
2
-20 0
20 40 60 80 100
Ambient temperature Ta (°C)
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 8 of 12
0
-20 0
20 40 60 80 100
Ambient temperature Ta (°C)
M62023L/P/FP
Output Current vs.
Difference Between Input and Output Voltages
Difference Between Input and Output Voltages vs.
Ambient Temperature
400
VIN = 3V
350
80
Difference between input and
output voltages VDROP (mV)
Output current IOUT (mA)
100
60
40
20
0
0
50
100
150
200
250
300
250 IOUT=100mA
200 IOUT=80mA
150
IOUT=50mA
100
50
0
-20
c
140
120
d
100
80
f
60
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Backup Di forward direction voltage VF (V)
160
0.8
0.7
0.6
60
50
40
30
20
10
0
-20 0 20 40 60 80 100
Ambient temperature Ta (°C)
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 9 of 12
RES "L" output voltage VOL (RES) (mV)
RES "L" output voltage VOL (RES) (mV)
70
IF=100µA
0.5
IF=10µA
0.4
0.3
IF=1µA
0.2
0.1
0
RES "L" Output Voltage vs .
Ambient Temperature
VIN=3V
Isink =1mA
20 40 60 80 100
Backup Di Forward Direction Voltage vs.
Ambint Temperature
Backup Di forward direction voltage VF (V)
80
0
Ambient temperature Ta (°C)
Difference between input
and output voltages VDROP (mV)
Backup Di Forward Direction Current vs. Voltage
VIN = 3V
80
70
-20 0 20 40 60 80 100
Ambient temperature Ta (°C)
RES "L" Output Voltage vs.
Ambient Temperature
VIN=2V
Isink =1mA
60
50
40
30
20
10
0
-20 0 20 40 60 80 100
Ambient temperature Ta (°C)
CS "L" Output Voltage vs.
Ambint Temperature
CS "H" output voltage VOH (CS) (mV)
CS "L" output voltage VOL (CS) (mV)
M62023L/P/FP
160
VIN=3V
Isink =1mA
140
120
100
80
60
40
20
VIN=2V
RCS=1MΩ
3.6
3.4
3.2
3.0
2.8
2.6
-20 0 20 40 60 80 100
Ambint temperature Ta (°C)
-20 0 20 40 60 80 100
Ambient temperature Ta (°C)
Delay Time vs. External Capacitance
Connected to The Ct Pin
7
5
40
VIN=0V
3V
35
Delay time tpd (ms)
3
Delay time tpd (ms)
3.8
2.4
0
1000
4.0
CS "H" Output Voltage vs.
Ambient Temperature
2
100
7
5
3
2
10
7
5
30
Delay Time vs. Ambient Temperature
VIN=0V 3V
Ct=4.7µA
25
20
15
10
3
5
2
1
0.1
2 3 5 7
1
2 3
5 7
10
2 3
5 7
External capacitance connected
to the Ct pin Ct (µF)
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 10 of 12
100
0
-20 0 20 40 60 80 100
Ambient temperature Ta (°C)
M62023L/P/FP
Package Dimensions
JEITA Package Code
P-SIP8-6.4x19-2.54
RENESAS Code
PRSS0008AA-A
Previous Code
8P5
2.8
±0.2
±0.2
2.54
0.5
±0.1
0.85
3.0 Min
1.2 Min
8.3 Max
6.4
19.0
MASS[Typ.]
0.73g
+0.3
-0.1
1.2 ±0.1
1.2 +0.1
-0.3
RENESAS Code
PRDP0008AA-A
5
1
4
MASS[Typ.]
0.5g
c
*1
E
8
Previous Code
8P4
+0.07
-0.05
e1
JEITA Package Code
P-DIP8-6.3x8.84-2.54
0.27
NOTE)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
*2
L
A1
A
A2
D
SEATING PLANE
*3 b
3
*3 b
2
bp
e
Reference
Symbol
e1
D
E
A
A1
A2
bp
b2
b3
c
e
L
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 11 of 12
Dimension in Millimeters
Min Nom Max
7.32 7.62 7.92
8.7 8.9 9.1
6.15 6.3 6.45
4.5
0.51
3.3
0.4 0.5 0.6
0.9 1.0 1.3
1.4 1.5 1.8
0.22 0.27 0.34
15°
0°
2.29 2.54 2.79
3.0
M62023L/P/FP
JEITA Package Code
P-SOP8-4.4x4.85-1.27
RENESAS Code
PRSP0008DE-C
*1
Previous Code
—
MASS[Typ.]
0.1g
F
D
8
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
5
c
*2
E
HE
bp
Index mark
Terminal cross section
( Ni/Pd/Au plating )
Reference
Symbol
4
1
*3
e
Z
bp
x
M
A
A2
L1
A1
θ
L
y
Detail F
JEITA Package Code
P-SOP8-4.4x5-1.27
RENESAS Code
PRSP0008DA-A
Min Nom Max
4.65 4.85 5.05
4.2
4.4 4.6
1.85
0.00 0.1 0.20
2.03
0.34 0.4 0.46
0.15 0.20 0.25
0°
8°
5.7 6.2 6.5
1.12 1.27 1.42
0.12
0.10
0.75
0.25 0.45 0.65
0.90
MASS[Typ.]
0.07g
E
5
*1
HE
8
Previous Code
8P2S-A
D
E
A2
A1
A
bp
b1
c
c1
θ
HE
e
x
y
Z
L
L1
Dimension in Millimeters
F
1
NOTE)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
4
Index mark
c
A2
*2
A1
D
L
A
Reference
Symbol
*3
e
bp
y
D
E
A2
A1
A
bp
c
Detail F
HE
e
y
L
REJ03D0528-0200 Rev.2.00 Jun 15, 2007
Page 12 of 12
Dimension in Millimeters
Min Nom Max
4.8 5.0 5.2
4.2 4.4 4.6
1.5
0.05
1.9
0.35 0.4 0.5
0.13 0.15 0.2
0°
10°
5.9 6.2 6.5
1.12 1.27 1.42
0.1
0.2 0.4 0.6
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RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
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