Intersil ISL6614BCB-T Dual advanced synchronous rectified buck mosfet drivers with pre-por ovp Datasheet

ISL6614B
®
Data Sheet
January 3, 2006
Dual Advanced Synchronous Rectified
Buck MOSFET Drivers with Pre-POR OVP
The ISL6614B integrates two ISL6613B MOSFET drivers
and is specifically designed to drive two Channel MOSFETs
in a synchronous rectified buck converter topology. This
driver combined with HIP63xx or ISL65xx Multi-Phase Buck
PWM controllers and N-Channel MOSFETs forms complete
core-voltage regulator solutions for advanced
microprocessors.
The ISL6614B features 7V rising threshold and drives both
the upper and lower gates simultaneously over a range from
5V to 12V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses. This driver is
optimized for POL DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during start-up.
The ISL6614B also features a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
FN9206.2
Features
• Pin-to-pin Compatible with HIP6602 SOIC family
• Quad N-Channel MOSFET Drives for Two Synchronous
Rectified Bridges
• Low VCC Rising Threshold (7V) for IBA Applications
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat
No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief 400 and 417 for Power Train Design,
Layout Guidelines, and Feedback Compensation Design
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL6614B
Pinouts
PWM1
1
14 VCC
PWM1
VCC
PHASE1
ISL6614BCR/ISL6614BCRZ (16 LD QFN)
TOP VIEW
PWM2
ISL6614BCB/ISL6614BCBZ (14 LD SOIC)
TOP VIEW
PWM2
2
13 PHASE1
16
15
14
13
GND
3
12 UGATE1
LGATE1
4
11 BOOT1
PVCC
5
10 BOOT2
PGND
6
9 UGATE2
LGATE2
7
8 PHASE2
GND 1
12 UGATE1
LGATE1 2
11 BOOT1
GND
5
6
7
8
NC
9
PHASE2
PGND 4
LGATE2
10 BOOT2
NC
PVCC 3
UGATE2
Ordering Information
PART NUMBER
PART MARKING
TEMP.
RANGE (°C)
ISL6614BCB
6614BCB
0 to 85
ISL6614BCB-T
6614BCB
14 Ld SOIC Tape and Reel
ISL6614BCBZ (Note)
6614BCBZ
ISL6614BCBZ-T (Note)
6614BCBZ
ISL6614BCR
6614BCR
ISL6614BCR-T
6614BCR
ISL6614BCRZ (Note)
6614BCRZ
0 to 85
0 to 85
0 to 85
6614BCRZ
6614BIB
-40 to 85
ISL6614BIB-T
6614BIB
14 Ld SOIC Tape and Reel
ISL6614BIBZ (Note)
6614BIBZ
ISL6614BIBZ-T (Note)
6614BIBZ
ISL6614BIR
6614BIR
6614BIR
6614BIRZ
ISL6614BIRZ-T (Note)
6614BIRZ
14 Ld SOIC
M14.15
14 Ld SOIC (Pb-free)
M14.15
16 Ld 4x4 QFN
L16.4x4
16 Ld 4x4 QFN Tape and Reel
ISL6614BIB
ISL6614BIRZ (Note)
PKG.
DWG. #
14 Ld SOIC Tape and Reel (Pb-free)
ISL6614BCRZ-T (Note)
ISL6614BIR-T
PACKAGE
16 Ld 4x4 QFN (Pb-free)
L16.4x4
16 Ld 4x4 QFN Tape and Reel (Pb-free)
-40 to 85
14 Ld SOIC
M14.15
14 Ld SOIC (Pb-free)
M14.15
14 Ld SOIC Tape and Reel (Pb-free)
-40 to 85
16 Ld 4x4 QFN
L16.4x4
16 Ld 4x4 QFN Tape and Reel
-40 to 85
16 Ld 4x4 QFN (Pb-free)
L16.4x4
16 Ld 4x4 QFN Tape and Reel (Pb-free)
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified
at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Contact the factory for availability.
2
FN9206.2
January 3, 2006
ISL6614B
Block Diagram
BOOT1
PVCC
VCC
UGATE1
PRE-POR OVP
FEATURES
+5V
SHOOTTHROUGH
PROTECTION
10K
PHASE1
CHANNEL 1
PVCC
PWM1
LGATE1
8K
PGND
CONTROL
LOGIC
+5V
PVCC
PGND
BOOT2
10K
UGATE2
PWM2
SHOOTTHROUGH
PROTECTION
8K
GND
PHASE2
CHANNEL 2
PVCC
LGATE2
PGND
PAD
3
FOR ISL6614BCR, THE PAD ON THE BOTTOM SIDE OF
THE QFN PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
FN9206.2
January 3, 2006
ISL6614B
Typical Application - 4 Channel Converter Using ISL65xx and ISL6614B Gate Drivers
7V TO 12V
BOOT1
+12V
UGATE1
VCC
PHASE1
LGATE1
+5V
DUAL
DRIVER
ISL6614B
5V TO 12V
BOOT2
COMP
FB
PVCC
+12V
VCC
VSEN
UGATE2
ISEN1
PGOOD
PWM1
EN
PWM2
VID
MAIN ISEN2
CONTROL
ISL65xx
PWM1
PHASE2
PWM2
LGATE2
GND
PGND
+VCORE
ISEN3
FS/DIS
PWM3
7V TO 12V
BOOT1
PWM4
GND
+12V
ISEN4
UGATE1
VCC
PHASE1
LGATE1
DUAL
DRIVER
ISL6614B
PVCC
5V TO 12V
BOOT2
+12V
UGATE2
PWM1
PHASE2
PWM2
LGATE2
GND
4
PGND
FN9206.2
January 3, 2006
ISL6614B
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (VBOOT-GND). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V
Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V
UGATE. . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V
VPHASE - 3.5V (<100ns Pulse Width, 2µJ) to VBOOT + 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3VDC to VPVCC + 0.3V
GND - 5V (<100ns Pulse Width, 2µJ) to VPVCC + 0.3V
PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3VDC to 15VDC
GND - 8V (<400ns, 20µJ) to 30V (<200ns, VBOOT-GND<36V)
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . Class I JEDEC STD
Thermal Resistance (Typical Notes 1, 2, 3) θJA(°C/W) θJC(°C/W)
SOIC Package (Note 1) . . . . . . . . . . . .
90
N/A
QFN Package (Notes 2, 3). . . . . . . . . .
46
9
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V to 13.2V
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . 5V to 12V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air.
2. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
4. Guaranteed by design. Not 100% tested in production.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
IVCC
fPWM = 300kHz, VPVCC = 12V
-
7.1
-
mA
Gate Drive Bias Current
IPVCC
fPWM = 300kHz, VPVCC = 12V
-
9.7
-
mA
6.9
7.25
V
POWER-ON RESET AND ENABLE
VCC Rising Threshold
0°C to 85°C
6.60
VCC Rising Threshold
-40°C to 85°C
5.60
VCC Falling Threshold
0°C to 85°C
5.20
VCC Falling Threshold
-40°C to 85°C
4.20
5.4
7.25
V
5.90
V
5.90
V
PWM INPUT (See Timing Diagram on Page 7)
Input Current
IPWM
VPWM = 5V
-
500
-
µA
VPWM = 0V
-
-460
-
µA
PWM Rising Threshold
VCC = 12V
-
3.00
-
V
PWM Falling Threshold
VCC = 12V
-
2.00
-
V
Typical Three-State Shutdown Window
VCC = 12V
1.80
2.40
V
Three-State Lower Gate Falling Threshold
VCC = 12V
-
1.50
-
V
Three-State Lower Gate Rising Threshold
VCC = 12V
-
1.00
-
V
Three-State Upper Gate Rising Threshold
VCC = 12V
-
3.20
-
V
Three-State Upper Gate Falling Threshold
VCC = 12V
-
2.60
-
V
Shutdown Holdoff Time
tTSSHD
-
245
-
ns
UGATE Rise Time
tRU
VPVCC = 12V, 3nF Load, 10% to 90%
-
26
-
ns
LGATE Rise Time
tRL
VPVCC = 12V, 3nF Load, 10% to 90%
-
18
-
ns
UGATE Fall Time
tFU
VPVCC = 12V, 3nF Load, 90% to 10%
-
18
-
ns
LGATE Fall Time
tFL
VPVCC = 12V, 3nF Load, 90% to 10%
-
12
-
ns
VPVCC = 12V, 3nF Load, Adaptive
-
10
-
ns
UGATE Turn-On Propagation Delay (Note 4)
5
tPDHU
FN9206.2
January 3, 2006
ISL6614B
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
LGATE Turn-On Propagation Delay (Note 4)
tPDHL
VPVCC = 12V, 3nF Load, Adaptive
-
10
-
ns
UGATE Turn-Off Propagation Delay (Note 4)
tPDLU
VPVCC = 12V, 3nF Load
-
10
-
ns
LGATE Turn-Off Propagation Delay (Note 4)
tPDLL
VPVCC = 12V, 3nF Load
-
10
-
ns
LG/UG Three-State Propagation Delay (Note 4)
tPDTS
VPVCC = 12V, 3nF Load
-
10
-
ns
Upper Drive Source Current
IU_SOURCE
VPVCC = 12V, 3nF Load
Upper Drive Source Impedance
RU_SOURCE 150mA Source Current
OUTPUT (Note 4)
Upper Drive Sink Current
-
1.25
-
Α
1.25
2.0
3.0
Ω
IU_SINK
VPVCC = 12V, 3nF Load
-
2
-
Α
RU_SINK
150mA Source Current
0.9
1.65
3.0
Ω
Lower Drive Source Current
IL_SOURCE
VPVCC = 12V, 3nF Load
-
2
-
A
Lower Drive Source Impedance
RL_SOURCE 150mA Source Current
0.85
1.25
2.2
Ω
-
3
-
A
0.60
0.80
1.35
Ω
Upper Drive DC Sink Impedance
Lower Drive Sink Current
IL_SINK
VPVCC = 12V, 3nF Load
Lower Drive Sink Impedance
RL_SINK
150mA Sink Current
Functional Pin Description
PACKAGE PIN #
SOIC
QFN
PIN
SYMBOL
1
15
PWM1
The PWM signal is the control input for the Channel 1 driver. The PWM signal can enter three distinct states during
operation, see the three-state PWM Input section under DESCRIPTION for further details. Connect this pin to the PWM
output of the controller.
2
16
PWM2
The PWM signal is the control input for the Channel 2 driver. The PWM signal can enter three distinct states during
operation, see the three-state PWM Input section under DESCRIPTION for further details. Connect this pin to the PWM
output of the controller.
3
1
GND
4
2
LGATE1
5
3
PVCC
This pin supplies power to both the lower and higher gate drives in ISL6614B. Its operating range is +5V to 12V.
Place a high quality low ESR ceramic capacitor from this pin to GND.
6
4
PGND
It is the power ground return of both low gate drivers.
-
5, 8
N/C
7
6
LGATE2
Lower gate drive output of Channel 2. Connect to gate of the low-side power N-Channel MOSFET.
8
7
PHASE2
Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET in Channel 2. This
pin provides a return path for the upper gate drive.
9
9
UGATE2
Upper gate drive output of Channel 2. Connect to gate of high-side power N-Channel MOSFET.
10
10
BOOT2
Floating bootstrap supply pin for the upper gate drive of Channel 2. Connect the bootstrap capacitor between this
pin and the PHASE2 pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the
Internal Bootstrap Device section under DESCRIPTION for guidance in choosing the capacitor value.
11
11
BOOT1
Floating bootstrap supply pin for the upper gate drive of Channel 1. Connect the bootstrap capacitor between this
pin and the PHASE1 pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the
Internal Bootstrap Device section under DESCRIPTION for guidance in choosing the capacitor value.
12
12
UGATE1
Upper gate drive output of Channel 1. Connect to gate of high-side power N-Channel MOSFET.
13
13
PHASE1
Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET in Channel 1. This
pin provides a return path for the upper gate drive.
14
14
VCC
Connect this pin to a +12V bias supply. It supplies power to internal analog circuits. Place a high quality low ESR
ceramic capacitor from this pin to GND.
-
17
PAD
Connect this pad to the power ground plane (GND) via thermally enhanced connection.
FUNCTION
Bias and reference ground. All signals are referenced to this node.
Lower gate drive output of Channel 1. Connect to gate of the low-side power N-Channel MOSFET.
No Connection.
6
FN9206.2
January 3, 2006
ISL6614B
Description
1.5V<PWM<3.2V
1.0V<PWM<2.6V
PWM
tPDLU
tPDHU
tTSSHD
tPDTS
tPDTS
UGATE
tFU
tRU
LGATE
tFL
tPDLL
tRL
tTSSHD
tPDHL
FIGURE 1. TIMING DIAGRAM
Operation
Designed for versatility and speed, the ISL6614B MOSFET
driver controls both high-side and low-side N-Channel FETs of
two half-bridge power trains from two externally provided PWM
signals.
Prior to VCC exceeding its POR level, the Pre-POR overvoltage protection function is activated during initial start-up; the
upper gate (UGATE) is held low and the lower gate (LGATE),
controlled by the Pre-POR overvoltage protection circuits, is
connected to the PHASE. Once the VCC voltage surpasses the
VCC Rising Threshold (See Electrical Specifications), the PWM
signal takes control of gate transitions. A rising edge on PWM
initiates the turn-off of the lower MOSFET (see Timing
Diagram). After a short propagation delay [tPDLL], the lower
gate begins to fall. Typical fall times [tFL] are provided in the
Electrical Specifications section. Adaptive shoot-through
circuitry monitors the PHASE voltage and determines the upper
gate delay time [tPDHU]. This prevents both the lower and
upper MOSFETs from conducting simultaneously. Once this
delay period is complete, the upper gate drive begins to rise
[tRU] and the upper MOSFET turns on.
A falling transition on PWM results in the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [tPDLU] is encountered before the upper
gate begins to fall [tFU]. Again, the adaptive shoot-through
circuitry determines the lower gate delay time, tPDHL. The
PHASE voltage and the UGATE voltage are monitored, and
the lower gate is allowed to rise after PHASE drops below a
level or the voltage of UGATE to PHASE reaches a level
depending upon the current direction (See next section for
details). The lower gate then rises [tRL], turning on the lower
MOSFET.
7
Advanced Adaptive Zero Shoot-Through Deadtime
Control (Patent Pending)
These drivers incorporate a unique adaptive deadtime control
technique to minimize deadtime, resulting in high efficiency
from the reduced freewheeling time of the lower MOSFETs’
body-diode conduction, and to prevent the upper and lower
MOSFETs from conducting simultaneously. This is
accomplished by ensuring either rising gate turns on its
MOSFET with minimum and sufficient delay after the other has
turned off.
During turn-off of the lower MOSFET, the PHASE voltage is
monitored until it reaches a -0.2V/+0.8V trip point for a
forward/reverse current, at which time the UGATE is released
to rise. An auto-zero comparator is used to correct the rDS(ON)
drop in the phase voltage preventing from false detection of the
-0.2V phase level during rDS(ON conduction period. In the case
of zero current, the UGATE is released after 35ns delay of the
LGATE dropping below 0.5V. During the phase detection, the
disturbance of LGATE’s falling transition on the PHASE node is
blanked out to prevent falsely tripping. Once the PHASE is
high, the advanced adaptive shoot-through circuitry monitors
the PHASE and UGATE voltages during a PWM falling edge
and the subsequent UGATE turn-off. If either the UGATE falls
to less than 1.75V above the PHASE or the PHASE falls to less
than +0.8V, the LGATE is released to turn on.
Three-State PWM Input
A unique feature of these drivers and other Intersil drivers is
the addition of a shutdown window to the PWM input. If the
PWM signal enters and remains within the shutdown window
for a set holdoff time, the driver outputs are disabled and
both MOSFET gates are pulled and held low. The shutdown
state is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
FN9206.2
January 3, 2006
ISL6614B
This feature helps prevent a negative transient on the output
voltage when the output is shut down, eliminating the
Schottky diode that is used in some systems for protecting
the load from reversed output voltage events.
In addition, more than 400mV hysteresis also incorporates
into the three-state shutdown window to eliminate PWM
input oscillations due to the capacitive load seen by the
PWM input through the body diode of the controller’s PWM
output when the power-up and/or power-down sequence of
bias supplies of the driver and PWM controller are required.
defined as the allowable droop in the rail of the upper gate
drive.
As an example, suppose two IRLR7821 FETs are chosen as
the upper MOSFETs. The gate charge, QG, from the data
sheet is 10nC at 4.5V (VGS) gate-source voltage. Then the
QGATE is calculated to be 53nC for PVCC =12V. We will
assume a 200mV droop in drive voltage over the PWM
cycle. We find that a bootstrap capacitance of at least
0.267µF is required.
1.6
Power-On Reset (POR) Function
Pre-POR Overvoltage Protection
Prior to VCC exceeding its POR level, the upper gate is held
low and the lower gate is controlled by the overvoltage
protection circuits during initial startup. The PHASE is
connected to the gate of the low side MOSFET (LGATE),
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial start-up. For
complete protection, the low side MOSFET should have a
gate threshold well below the maximum voltage rating of the
load/microprocessor.
When VCC drops below its POR level, both gates pull low
and the Pre-POR overvoltage protection circuits are not
activated until VCC resets.
Internal Bootstrap Device
Both drivers feature an internal bootstrap schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit. The bootstrap
function is also designed to prevent the bootstrap capacitor
from overcharging due to the large negative swing at the
trailing-edge of the PHASE node. This reduces voltage
stress on the boot to phase pins.
The bootstrap capacitor must have a maximum voltage
rating above UVCC + 5V and its capacitance value can be
chosen from the following equation:
Q GATE
C BOOT_CAP ≥ -------------------------------------∆V BOOT_CAP
(EQ. 1)
Q G1 • PVCC
Q GATE = ------------------------------------ • N Q1
V GS1
where QG1 is the amount of gate charge per upper MOSFET
at VGS1 gate-source voltage and NQ1 is the number of
control MOSFETs per channel. The ∆VBOOT_CAP term is
8
1.4
1.2
CBOOT_CAP (µF)
During initial startup, the VCC voltage rise is monitored.
Once the rising VCC voltage exceeds 6.9V (typically),
operation of the driver is enabled and the PWM input signal
takes control of the gate drives. If VCC drops below the
falling threshold of 5.6V (typically), operation of the driver is
disabled.
1.
0.8
0.6
QGATE = 100nC
0.4
50nC
0.2
20nC
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
∆VBOOT_CAP (V)
FIGURE 2. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
VOLTAGE
Gate Drive Voltage Versatility
The ISL6614B provides the user flexibility in choosing the
gate drive voltage for efficiency optimization. The ISL6614B
ties the upper and lower drive rails together. Simply applying
a voltage from 5V up to 12V on PVCC sets both gate drive
rail voltages simultaneously. Connecting a SOT-23 package
type of dual schottky diodes from the VCC to BOOT1 and
BOOT2 can bypass the internal bootstrap devices of both
upper gates so that the part can operate as a dual ISL6612B
driver, which has a fixed VCC (7 to 12V typically) on the
upper gate and a programmable lower gate drive voltage.
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency (FSW), the output drive impedance, the
external gate resistance, and the selected MOSFET’s
internal gate resistance and total gate charge. Calculating
the power dissipation in the driver for a desired application is
critical to ensure safe operation. Exceeding the maximum
allowable power dissipation level will push the IC beyond the
maximum recommended operating junction temperature of
125°C. The maximum allowable IC power dissipation for the
SO14 package is approximately 1W at room temperature,
while the power dissipation capacity in the QFN packages,
with an exposed heat escape pad, is around 2W. See Layout
Considerations paragraph for thermal transfer improvement
FN9206.2
January 3, 2006
ISL6614B
suggestions. When designing the driver into an application, it
is recommended that the following calculation is used to
ensure safe operation at the desired frequency for the
selected MOSFETs. The total gate drive power losses due to
the gate charge of MOSFETs and the driver’s internal
circuitry and their corresponding average driver current can
be estimated with EQs. 2 and 3, respectively,
P Qg_TOT = 2 • P Qg_Q1 + 2 • P Qg_Q2 + I Q • VCC
BOOT
PVCC
D
CGD
RHI1
RLO1
G
RG1
CDS
RGI1
CGS
Q1
(EQ. 2)
Q G1 • PVCC 2
P Qg_Q1 = --------------------------------------- • F SW • N Q1
V GS1
S
PHASE
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
Q G2 • PVCC 2
P Qg_Q2 = --------------------------------------- • F SW • N Q2
V GS2
PVCC
D
 Q G1 • N Q1 Q G2 • N Q2
I DR =  ----------------------------- + ------------------------------ • F SW • 2 + I Q
V GS2 
 V GS1
CGD
(EQ. 3)
where the gate charge (QG1 and QG2) is defined at a
particular gate to source voltage (VGS1and VGS2) in the
corresponding MOSFET datasheet; IQ is the driver’s total
quiescent current with no load at both drive outputs; NQ1
and NQ2 are number of upper and lower MOSFETs,
respectively; PVCC is the drive voltages for both upper and
lower FETs, respectively. The IQ*VCC product is the
quiescent power of the driver without capacitive load and is
typically 200mW at 300kHz.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (RG1 and RG2) and the internal gate resistors
(RGI1 and RGI2) of MOSFETs. Figures 3 and 4 show the
typical upper and lower gate drives turn-on transition path.
The power dissipation on the driver can be roughly
estimated as:
P DR = 2 • P DR_UP + 2 • P DR_LOW + I Q • VCC
(EQ. 4)
R LO1
R HI1

 P Qg_Q1
P DR_UP =  -------------------------------------+ --------------------------------------- • --------------------2
R
+
R
R
+
R
 HI1
EXT1
LO1
EXT1
R LO2
R HI2

 P Qg_Q2
+ --------------------------------------- • --------------------P DR_LOW =  -------------------------------------2
 R HI2 + R EXT2 R LO2 + R EXT2
R GI1
R EXT1 = R G1 + ------------N
Q1
RHI2
RLO2
G
RG2
CDS
RGI2
CGS
Q2
S
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
Layout Considerations
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
in between the power components is required for good
airflow. The traces from the drivers to the FETs should be
kept short and wide to reduce the inductance of the traces
and to promote clean drive signals.
R GI2
R EXT2 = R G2 + ------------N
Q2
9
FN9206.2
January 3, 2006
ISL6614B
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
L16.4x4
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220-VGGC ISSUE C)
MILLIMETERS
SYMBOL
MIN
NOMINAL
MAX
NOTES
A
0.80
0.90
1.00
-
A1
-
-
0.05
-
A2
-
-
1.00
A3
b
0.23
D
0.28
9
0.35
5, 8
4.00 BSC
D1
D2
9
0.20 REF
-
3.75 BSC
1.95
2.10
9
2.25
7, 8
E
4.00 BSC
-
E1
3.75 BSC
9
E2
1.95
e
2.10
2.25
7, 8
0.65 BSC
-
k
0.25
-
-
-
L
0.50
0.60
0.75
8
L1
-
-
0.15
10
N
16
2
Nd
4
3
Ne
4
3
P
-
-
0.60
9
θ
-
-
12
9
Rev. 5 5/04
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
10. Depending on the method of lead termination at the edge of the
package, a maximum 0.15mm pull back (L1) maybe present. L
minus L1 to be equal to or greater than 0.3mm.
10
FN9206.2
January 3, 2006
ISL6614B
Small Outline Plastic Packages (SOIC)
M14.15 (JEDEC MS-012-AB ISSUE C)
N
INDEX
AREA
H
0.25(0.010) M
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
B M
E
INCHES
-B-
1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
α
A1
B
0.25(0.010) M
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.3367
0.3444
8.55
8.75
3
E
0.1497
0.1574
3.80
4.00
4
e
C
0.10(0.004)
B S
0.050 BSC
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
NOTES:
MILLIMETERS
α
14
0o
14
8o
0o
7
8o
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
FN9206.2
January 3, 2006
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