FOSLINK FSM75N75T N-channel 75v 0.0097î© 80a power mosfet Datasheet

N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
„
FEATURES
Part No
VD S S
(at Tj(max))
RD S ( o n )
ID
FSM75N75
75V
<0.011Ω
80A
GENERAL DESCRIPTION
This Power MOSFET series has specifically been
designed to minimize input capacitance and gate
charge. It is therefore suitable as primary switch in
advanced high-efficiency, high-frequency isolated
DC-DC converters for Telecom and Computer
applications. It is also intended for any applications
with low gate drive requirements.
z
Exceptional dv/dt capability
z
100% avalanche tested
z
Low intrinsic capacitances
„
ADVANTAGES
„
APPLICATIONS
z
z
z
Easy to mount
Space savings
High power density
z
z
z
z
DC motor control
Solenoid and relay drivers
DC-DC Converters
Automotive environment
„
INTERNAL SCHEMATIC DIAGRAM AND EXTERIOR
„
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
Unit
VDSS
TJ = 25°C to 150°C
75
V
VGS
Continuous
± 20
V
Drain current (continuous) at TC = 25°C
80
Drain current (continuous) at TC = 100°C
65
Drain current (pulsed with limited by TJM) at TC = 25°C
320
A
TJ = 25°C
200
W
Derating Factor
1.5
W/°C
ID
IDM
PD
A
15
V/ns
EAS
Peak diode recovery voltage slope
(ISD≤80A, di/dt≤300A/µs, VDD≤V(BR)DSS, TJ≤TJMAX)
TJ = 25°C, ID = 40A, VDD= 38V
700
mJ
TJ
Max operating junction temperature
160
°C
Storage temperature
-55 to 160
°C
dv/dt
Tstg
1/9
„
2007-7-27
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
„
THERMAL DATA
Symbol
Parameter
Rating
Unit
RthJC
Thermal resistance junction-case
1
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W
Maximum lead temperature for soldering purpose(1)
300
°C
Tl
Note: (1) 1.6mm from case for 10sec.
„
ELECTRICAL CHARACTERISTICS(TCASE=25°C, UNLESS OTHERWISE NOTED)
Symbol
Off Characteristics
VDSS
Test Conditions
Min.
ID = 250µA, VGS= 0
75
Typ.
1
10
µA
µA
±100
nA
2.8
4
V
0.0097
0.011
Ω
VDS = 75V,VGS= 0 ,TJ=100°C
VGS = ±20V ,VDS= 0
IGSS
Unit
V
VDS = 75V,VGS= 0 TJ=25°C
IDSS
Max.
On Characteristics
VDS = VGS , ID = 250µA
VGS(th)
VGS= 10V, ID= 40A
RDS ( on )
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
2
Dynamic Characteristics
gfs
VDS = 15V, ID = 40A ,Pulse test
Ciss
VDS = 25V, f=1MHz, VGS = 0V
Coss
Crss
Switching Characteristics
td(on)
tr
td(off)
2/9
80
S
3000
800
50
pF
20
VDD = 38V, ID = 45A, VGS = 10V
15
60
tf
10
Qg
Qgs
Qgd
100
20
40
VGS = 60 V, ID = 80A, VGS =10V
2007-7-27
ns
nC
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
„ ELECTRICAL CHARACTERISTICS(TCASE=25°C, UNLESS OTHERWISE NOTED)
Source-Drain Diode Ratings and Characteristics
Symbol
Test Conditions
IS
ISM
VSD
„
3/9
Max.
Unit
VGS = 0V, Source-drain Current
80
A
Repetitive; pulse width limited by TJM
320
A
1.4
V
IF = 80A, VGS = 0 V
Min.
Typ.
0.98
trr
VGS = 0 V, Is = 80A
70
ns
Qrr
dIF=100A/us, Pulse test, t ≤ 300 µs, duty cycle d ≤ 1.5%
200
nC
TYPICAL CHARACTERISTICS
2007-7-27
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
„
4/9
TYPICAL CHARACTERISTICS (CONTINUED)
2007-7-27
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
„
TEST CIRCUITS
Gate Charge Test Circuit and Waveform
Resistive switch Test Circuit and Waveform
UIS Test Circuit and Waveform
5/9
2007-7-27
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
„
TEST CIRCUITS (CONTINUED)
Peak Diode Recovery dv/dt Test Circuit and Waveform
6/9
2007-7-27
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
„
ORDERING INFORMATION
FSM75N75XX
Package:
T: TO220-3L
„
Packing:
Blank: Tube or Bulk
MARKING INFORMATION
Logo
75N75
Part Number
YYWWXX
Internal Code
Date Code:
YY: Year (01=2001)
WW: Nth week (01~52)
7/9
2007-7-27
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
„
PACKAGE INFORMATION
(I) TO220
Symbol
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Φ
8/9
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Dimensions In Millimeters
Nom.
Max.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
16
30.6
10.6
3.6
16.4
9.3
3.2
Min.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
Dimensions In Inches
Nom.
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
0.630
1.126
0.385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
2007-7-27
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
(2) TO220
Symbol
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA
9/9
Dimensions In Millimeters
Nom.
Max.
4.60
1.32
2.72
1.27
0.49
0.70
0.61
0.88
1.14
1.70
1.14
1.70
4.95
5.15
2.4
2.7
10.0
10.4
16.4
13.0
14.0
2.65
2.95
15.25
15.75
6.2
6.6
3.5
3.93
3.75
3.85
Min.
4.40
1.23
2.40
Min.
0.173
0.048
0.094
Dimensions In Inches
Nom.
Max.
0.181
0.051
0.107
0.050
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.645
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
2007-7-27
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