DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring for stress protection. Encapsulated in a SOD882 leadless ultra small plastic package. • Low forward voltage • Guard ring protected • High breakdown voltage • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) handbook, halfpage • Boardspace 1.17 mm2 (approx. 10% of SOT23) • Power dissipation comparable to SOT23. Bottom view MDB391 APPLICATIONS • Ultra high-speed switching Marking code: S5. The marking bar indicates the cathode. • Voltage clamping • Protection circuits • Mobile communication, digital (still) cameras, PDAs and PCMCIA cards. Fig.1 Simplified outline (SOD882) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MAX. UNIT − 70 V − 70 mA − 70 mA − 100 mA storage temperature −65 +150 °C junction temperature − 150 °C VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 IFSM non-repetitive peak forward current tp < 10 ms Tstg Tj 2003 May 20 MIN. 2 Philips Semiconductors Product specification Schottky barrier diode BAS70L ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER CONDITIONS forward voltage MAX. UNIT see Fig.2 continuous reverse current diode capacitance IF = 1 mA 410 mV IF = 10 mA 750 mV IF = 15 mA 1 V VR = 50 V; see Fig.3; note 1 100 µA VR = 70 V; see Fig.3; note 1 10 µA VR = 0 V; f = 1 MHz; see Fig.5 2 pF Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. Soldering Reflow soldering is the only recommended soldering method. 2003 May 20 3 VALUE UNIT 500 K/W Philips Semiconductors Product specification Schottky barrier diode BAS70L GRAPHICAL DATA MRA803 10 2 MRA805 10 2 IR IF (mA) (1) (µA) 10 10 (2) 1 1 10 1 (3) 10 1 10 2 (1) 10 2 (2) (3) (4) 10 3 0 0.2 0.4 0.6 0.8 0 1 20 40 60 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MRA802 103 80 VR (V) VF (V) Reverse current as a function of reverse voltage; typical values. MRA804 2 Cd (pF) rdiff 1.5 102 1 10 0.5 1 10−1 0 1 10 IF (mA) 102 0 20 60 80 VR (V) f = 10 kHz. f = 1 MHz; Tamb = 25 °C. Fig.4 Fig.5 Differential forward resistance as a function of forward current; typical values. 2003 May 20 40 4 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier diode BAS70L PACKAGE OUTLINE Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm L SOD882 L 1 2 b e1 A A1 E D (2) 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b D E e1 L mm 0.50 0.46 0.03 0.55 0.47 0.62 0.55 1.02 0.95 0.65 0.30 0.22 Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 03-04-16 03-04-17 SOD882 2003 May 20 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification Schottky barrier diode BAS70L DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 May 20 6 Philips Semiconductors Product specification Schottky barrier diode BAS70L NOTES 2003 May 20 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2003 May 20 Document order number: 9397 750 11312