BC856- BC860 tm PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Symbol VCBO VCEO Ta = 25°C unless otherwise noted Parameter Value Units : BC856 : BC857/860 : BC858/859 -80 -50 -30 V V V : BC856 : BC857/860 : BC858/859 -65 -45 -30 V V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. ICBO Collector Cut-off Current VCB= -30V, IE=0 hFE DC Current Gain VCE= -5V, IC= -2mA VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -90 -250 VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -700 -900 VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA f=100MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz NF Noise Figure : BC856/857/858 : BC859/860 VCE= -5V, IC= -200µA RG=2KΩ, f=1KHz : BC859 : BC860 VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000Hz 110 -600 Max. Units -15 nA 800 -660 -300 -650 mV mV mV mV -750 -800 150 mV mV MHz 6 pF 2 1 10 4 dB dB 1.2 1.2 4 2 dB dB * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation BC856- BC860 Rev. B 1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor August 2006 Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 Ordering Information Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions BC856AMTF 9AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC856BMTF 9AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC856CMTF 9AC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC857AMTF 9BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC857BMTF 9BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC857CMTF 9BC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC858AMTF 9CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC858BMTF 9CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC858CMTF 9CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859AMTF 9DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859BMTF 9DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859CMTF 9DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860AMTF 9EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860BMTF 9EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860CMTF 9EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector Note1 : Affix “-A,-B,-C” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing. 2 BC856- BC860 Rev. B www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor hFE Classification -50 1000 IB = - 400µA IB = - 350µA -40 VCE = - 5V IB = - 300µA -35 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 IB = - 250µA -30 IB = - 200µA -25 IB = - 150µA -20 IB = - 100µA -15 -10 IB = - 50µA -5 -0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 100 10 -0.1 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 Figure 2. DC current Gain -10 -100 -1 IC[mA], COLLECTOR CURRENT IC = 10 IB VBE(sat) -0.1 VCE(sat) -0.01 -0.1 VCE = - 5V -10 -1 -0.1 -1 -10 -100 -0.2 -0.4 IC[mA], COLLECTOR CURRENT fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz IE=0 1 -10 -100 -1.0 -1.2 1000 f=1MHz IE=0 100 10 -1 -10 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 3 BC856- BC860 Rev. B -0.8 Figure 4. Base-Emitter On Voltage 10 -1 -0.6 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE -10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC856- BC860 PNP Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 4 BC856- BC860 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 BC856- BC860 Rev. B www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor TRADEMARKS