Bourns BDW24 Pnp silicon power darlington Datasheet

BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDW23, BDW23A, BDW23B and BDW23C
●
50 W at 25°C Case Temperature
●
6 A Continuous Collector Current
●
Minimum hFE of 750 at 2 A, 3 V
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
BDW24B
Collector-emitter voltage (IB = 0)
V CBO
-60
-80
BDW24C
-100
BDW24
-45
BDW24A
BDW24B
UNIT
-45
BDW24
BDW24A
VALUE
VCEO
-60
-80
V
V
-100
BDW24C
VEBO
-5
Continuous collector current
IC
-6
A
Continuous base current
IB
-0.2
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
Emitter-base voltage
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
V
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
VEC
Collector-emitter
TEST CONDITIONS
MIN
-45
BDW24A
-60
BDW24B
-80
BDW24C
-100
TYP
MAX
IC = -100 mA
IB = 0
VCE = -30 V
IB = 0
BDW24
-0.5
Collector-emitter
VCE = -30 V
IB = 0
BDW24A
-0.5
cut-off current
VCE = -40 V
IB = 0
BDW24B
-0.5
breakdown voltage
(see Note 3)
BDW24
V
VCE = -50 V
IB = 0
BDW24C
-0.5
VCB = -45 V
IE = 0
BDW24
-0.2
Collector cut-off
VCB = -60 V
IE = 0
BDW24A
-0.2
current
VCB = -80 V
IE = 0
BDW24B
-0.2
VCB = -100 V
IE = 0
BDW24C
-0.2
VEB =
-5 V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
-2
VCE =
-3 V
IC =
-1 A
VCE =
-3 V
IC =
-2 A
VCE =
-3 V
IC =
-6 A
Collector-emitter
IB =
-8 mA
IC =
-2 A
saturation voltage
IB = -60 mA
IC =
-6 A
IB =
-8 mA
IC =
-2 A
Base-emitter
saturation voltage
Base-emitter
VCE =
-3 V
IC =
-1 A
voltage
VCE =
-3 V
IC =
-6 A
IE =
-2 A
IB = 0
Parallel diode
forward voltage
UNIT
mA
mA
mA
1000
(see Notes 3 and 4)
750
20000
100
-2
(see Notes 3 and 4)
V
-3
(see Notes 3 and 4)
-2.5
-2.5
(see Notes 3 and 4)
-3
-1.8
V
V
V
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
2.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = -3 A
IB(on) = -12 mA
IB(off) = 12 mA
1
µs
toff
Turn-off time
VBE(off) = 4.5 V
RL = 10 Ω
tp = 20 µs, dc ≤ 2%
5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS125AD
40000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
-1·0
TCS125AE
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
-0·5
-10
TC = -40°C
TC = 25°C
TC = 100°C
0
-0·5
IC - Collector Current - A
-1·0
-10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS125AF
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·0
TC = -40°C
TC = 25°C
TC = 100°C
-2·5
-1·0
-1·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS125AB
IC - Collector Current - A
DC Operation
tp = 300 µs,
d = 0.1 = 10%
-10
-1·0
BDW24
BDW24A
BDW24B
BDW24C
-0·1
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AA
Ptot - Maximum Power Dissipation - W
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDW24, BDW24A, BDW24B, BDW24C
PNP SILICON POWER DARLINGTONS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MDXXBE
5
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