DIGITRON SEMICONDUCTORS C228 SERIES C228()3 SERIES C229 SERIES SILICON CONTROLLED RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Peak repetitive off state voltage (TJ = -40 to +125°C) C228F, C228F3, C229F C228A, C228A3, C229A C228B, C228B3, C229B C228C, C228C3, C229C C228D, C228D3, C229D C228E, C228E3, C229E C228M, C228M3, C229M Value Unit (1) 50 100 200 300 400 500 600 VRRM, VDRM Peak non-repetitive reverse voltage (TJ = -40 to +125°C) C228F, C228F3, C229F C228A, C228A3, C229A C228B, C228B3, C229B C228C, C228C3, C229C C228D, C228D3, C229D C228E, C228E3, C229E C228M, C228M3, C229M 75 150 300 400 500 600 720 VRSM Forward current RMS IT(RMS) Peak surge current (one cycle, 60Hz, TC = -40 to +125°C) ITSM Circuit fusing considerations (TC = -40 to +125°C, t = 8.3ms) I2t Peak gate power Average gate power Volts Volts 35 Amps Amps 300 A2s 370 PGM 5 Watts PG(AV) 0.5 Watts Peak forward gate current IGM 2 Amps Operating junction temperature range TJ -40 to +125 °C Tstg -40 to +150 °C 30 In. lb. Storage temperature range Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case C228 and C229 SERIES C228()3 SERIES Symbol Maximum Unit RӨJC 1.70 1.85 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open) TC = 25°C TC = 125°C Symbol IDRM, IRRM Forward “on” voltage (ITM = 100A peak) 144 Market Street Kenilworth NJ 07033 USA VT phone +1.908.245-7200 fax +1.908.245-0555 Min. Typ. Max. Unit - - 10 3 µA mA - - 1.9 [email protected] www.digitroncorp.com Rev. 20130128 Volts DIGITRON SEMICONDUCTORS C228 SERIES C228()3 SERIES C229 SERIES SILICON CONTROLLED RECTIFIER Characteristic Symbol Min. Typ. Max. Unit IGT - - 40 80 mA VGT - - 2.5 3 Volts VGT 0.2 - - - - 75 150 - 1 - - 20 35 - - 50 - Gate trigger current (continuous dc) (VD = 12V, RL = 80Ω, TC = 25°C) (VD = 6V, RL = 80Ω, TC = -40°C) Gate trigger voltage (continuous dc) (VD = 12V, RL = 80Ω, TC = 25°C) (VD = 6V, RL = 80Ω, TC = -40°C) Gate trigger voltage (Rated VDRM, RL = 1000Ω, TC = 125°C) Holding current (Anode voltage = 24V, gate open) TC = 25°C TC = -40°C IH Turn-on time (td +tr) (ITM = 35A, IGT = 40mA) ton Turn-off time (ITM = 10A, IR = 10A) (ITM = 10A, IR = 10A, TC = 100°C) toff Forward voltage application rate (TC = 100°C) dv/dt MECHANICAL CHARACTERISTICS Case Digi PF1 (C229 SERIES) Marking Body painted, alpha-numeric DIGI PF1 A F G H J K L Q 144 Market Street Kenilworth NJ 07033 USA Inches Min Max 0.501 0.505 0.160 0.085 0.095 0.060 0.070 0.300 0.350 1.050 0.670 0.055 0.085 phone +1.908.245-7200 fax +1.908.245-0555 Millimeters Min Max 12.730 12.830 4.060 2.160 2.410 1.520 1.780 7.620 8.890 26.670 17.020 1.400 2.160 [email protected] www.digitroncorp.com Rev. 20130128 Volts mA µs µs V/µs DIGITRON SEMICONDUCTORS C228 SERIES C228()3 SERIES C229 SERIES SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-48 (C228, C228()3 SERIES) Marking Body painted, alpha-numeric Polarity Cathode is stud TO-48 A B C F H J K L Q T 144 Market Street Kenilworth NJ 07033 USA Inches Min Max 0.604 0.614 0.551 0.559 1.050 1.190 0.135 0.160 0.265 0.420 0.455 0.620 0.670 0.300 0.350 0.055 0.085 0.501 0.505 phone +1.908.245-7200 fax +1.908.245-0555 Millimeters Min Max 15.340 15.600 14.000 14.200 2.670 30.230 3.430 4.060 6.730 10.670 11.560 15.750 17.020 7.620 8.890 1.400 2.160 12.730 12.830 [email protected] www.digitroncorp.com Rev. 20130128