AP2301GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.8V Gate Drive P-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS -20V RDS(ON) 130mΩ ID ▼ Surface Mount Device - 2.5A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. G S The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Parameter Symbol Rating Units VDS Drain-Source Voltage - 20 V VGS Gate-Source Voltage +12 V -2.5 A -2.0 A ID@TA=25℃ ID@TA=70℃ 3 Drain Current , VGS @ 5V 3 Drain Current , VGS @ 5V 1 IDM Pulsed Drain Current -10 A PD@TA=25℃ Total Power Dissipation 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 100 ℃/W 1 201411178AP AP2301GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-5V, ID=-2.5A - - 130 mΩ VGS=-2.8V, ID=-2A - - 190 mΩ -0.5 - -1.25 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-2A - 4 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-2A - 5 9 nC Qgs Gate-Source Charge VDS=-16V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC td(on) Turn-on Delay Time VDS=-10V - 6 - ns tr Rise Time ID=-1A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω - 16 - ns tf Fall Time VGS=-10V - 5 - ns Ciss Input Capacitance VGS=0V - 270 - pF Coss Output Capacitance VDS=-20V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Rg Gate Resistance f=1.0MHz - 10 15 Ω Min. Typ. - - -1 A - - -10 A - - -1.2 V . Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=-1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage Tj=25℃, IS=-0.83A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 300℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2301GN-HF 10 10 V GS = -5V o T A =25 C V GS = -4V 8 -ID , Drain Current (A) 8 -ID , Drain Current (A) V GS = -5V T A =150 o C V GS = -4V V GS = -3V 6 4 6 4 V GS = -2V V GS = -2V 2 V GS = -3V 2 0 0 0 1 2 3 4 5 0 6 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 240 I D = -2A T A =25 ℃ I D = -2.5A V GS = -5V 1.6 160 . Normalized RDS(ON) RDS(ON) (Ω ) 200 1.4 1.2 1 120 0.8 80 0.6 0 2 4 6 8 10 -50 Fig 3. On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Normalized On-Resistance 1.5 T j =150 o C Normalized VGS(th) 10 -IS(A) 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 o C 1 1.0 0.5 0.0 0 0.1 0.3 0.5 0.7 0.9 1.1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2301GN-HF f=1.0MHz 1000 4 I D = -2A V DS = -16V C iss 3 C (pF) -VGS , Gate to Source Voltage (V) 5 100 C oss C rss 2 1 10 0 0 1 2 3 4 5 1 6 5 Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 100 100us Operation in this area limited by RDS(ON) 1 . 1ms 10ms 100ms 0.1 T A =25 °C Single Pulse 1s DC Normalized Thermal Response (Rthja) 1 10 -ID (A) 9 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 PDM 0.1 t T 0.05 Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.02 Rthja = 300℃/W 0.01 Single Pulse 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr Charge Q td(off) tf Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 AP2301GN-HF MARKING INFORMATION Part Number : N1 N1SS Date Code : SS SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… . 5