Jiangsu BZT52C10S Zener diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BZT52C2V4S-BZT52CS
ZENER DIODE
SOD-323
FEATURES
z
Planar die construction
z
200mW power dissipation on ceramic PBC
z
General purpose, medium current
z
Ideally suited for automated assembly processes
z
Available in lead free version
Marking:
XX = Device code, see table on page2 the marking code
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device .
Maximum Ratings (Ta=25℃ unless otherwise specified )
Characteristic
Symbol
Value
Unit
VF
0.9
V
Forward Voltage (Note 2) @ IF = 10mA
Power Dissipation(Note 1)
PD
200
mW
Thermal Resistance from Junction to Ambient
RθJA
625
Junction Temperature
Tj
Tstg
℃/W
℃
-55~+150
Storage Temperature Range
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1
150
℃
F,May,2016
ELECTRICAL CHARACTERISTICS
Ta=25℃ unless otherwise specified
Zener Voltage Range (Note 2)
TYPE
Maximum
Typical
Maximum Zener Impedance
Reverse
Temperature
(Note 3)
Current
Coefficient
(Note 2)
@IZTC mV/℃
Marking
VZ@IZT
IZT
Nom(V)
Min(V)
Max(V)
(mA)
ZZT@IZT
ZZK@IZK
Ω
Test
Current
IZTC
IZK
IR
VR
(mA)
μA
V
Min
Max
mA
BZT52C2V4S
WX
2.4
2.20
2.60
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52C2V7S
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0S
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3S
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
5
BZT52C3V6S
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
5
BZT52C3V9S
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V3S
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V7S
W7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52C5V1S
W8
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52C5V6S
W9
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2
2.5
5
BZT52C6V2S
WA
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52C6V8S
WB
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52C7V5S
WC
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52C8V2S
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1S
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10S
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11S
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12S
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13S
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15S
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13
5
BZT52C16S
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14
5
BZT52C18S
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16
5
BZT52C20S
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22S
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24S
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27S
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30S
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33S
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36S
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39S
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
BZT52C43S
WU
43
40. 0
46.0
2
100
700
1
0.1
32
10
12
5
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
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2
F,May,2016
Typical Characteristics
Zener Characteristics(VZ Up to 10 V)
Zener Characteristics(11 V to 43 V)
100
100
43
36
39
33
30
24
27
1
0.5
1
2
3
4
5
6
7
8
10
9
0.5
10
11
15
30
35
40
45
Typical Leakage Current
100
Pulsed
TYPICAL Ta VALUES
35
50
VZ, ZENER VOLTAGE (V)
Temperature Coefficients
40
25
20
VZ, ZENER VOLTAGE (V)
FOR BZT52CXXXS SERIES
10
30
IR, LEAKAGE CURRENT (uA)
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
20
22
10
18
10
9.1
8.2
6.8
7.5
6.2
5.1
5.6
4.3
1
PD =200mW
11
12
13
IZ, ZENER CURRENT (mA)
Pulsed
10
2.4
IZ, ZENER CURRENT (mA)
Ta =25℃
PD =200mW
Pulsed
15
16
Ta =25℃
25
20
VZ @ IZT
15
10
5
1
0.1
0.01
Ta=100℃
1E-3
0
Ta=25℃
-5
1E-4
0
4
8
12
16
20
24
28
32
36
40
44
0
5
VZ, NOMINAL ZENER VOLTAGE (V)
10
15
20
25
35
40
45
Effect of Zener Voltage on Zener Impedance
Typical Capacitance
1000
1000
Ta=25℃
Ta=25℃
f=1MHz
ZZT, DYNAMIC IMPEDANCE(Ω)
100
1V BIAS
BIAS AT
50% OF VZ NOM
10
IZ(AC)=0.1IZ(DC)
IZ=1mA
0V BIAS
C, CAPACITANCE (pF)
30
VZ, NOMINAL ZENER VOLTAGE (V)
1
f=1kHz
100
IZ=5mA
10
1
1
10
100
1
VZ, NOMINAL ZENER VOLTAGE (V)
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
200
POWER DISSIPATION
PD
(mW)
250
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
150
(℃ )
3
F,May,2016
SOD-323 Package Outline Dimensions
SOD-323 Suggested Pad Layout
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4
F,May,2016
SOD-323 Tape and Reel
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5
F,May,2016