ON MURHD560W1T4G Megahertz power rectifier Datasheet

MURHD560T4,
MURHD560W1T4
Preferred Device
MEGAHERTZ™
Power Rectifier
Features and Benefits
•
•
•
•
•
http://onsemi.com
Ultrafast 30 Nanosecond Recovery Times
175°C Operating Junction Temperature
High Temperature Glass Passivated Junction
High Voltage Capability to 600 Volts
These are Pb−Free Devices
ULTRAFAST RECTIFIER
5.0 AMPERES
600 VOLTS
4
Applications
• Power Supplies
• Inverters
• Free Wheeling Diodes
1 2
Mechanical Characteristics
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 0.4 g (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Ratings:
Machine Model = C (>400 V)
Human Body Model = 3B (>8000 V)
MAXIMUM RATINGS
1
4
3
4
STYLE 3
STYLE 8
MARKING DIAGRAMS
YWW
UH560G
YWW
560W1G
STYLE 8
Value
Unit
STYLE 3
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
600
V
Average Rectified Forward Current
(Rated VR, TC = 159°C)
IF(AV)
5.0
A
UH560
560W1
Y
WW
G
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single Phase,
60 Hz)
IFSM
50
A
Operating Junction and Storage
Temperature Range
1
3
Symbol
Rating
3
DPAK
CASE 369C
STYLES 3, 8
= MURHD560T4
= MURHD560W1T4
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
TJ, Tstg
Package
Shipping†
MURHD560T4G
DPAK
(Pb−Free)
2500 /
Tape & Reel
MURHD560W1T4G
DPAK
(Pb−Free)
2500 /
Tape & Reel
Device
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 4
1
Publication Order Number:
MURHD560/D
MURHD560T4, MURHD560W1T4
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Maximum Thermal Resistance, Junction to Case
Rating
RqJC
2.5
°C/W
Maximum Thermal Resistance, Junction to Ambient (Note 1)
RqJA
49.5
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Rating
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5.0 Amps, TC = 25°C)
(IF = 5.0 Amps, TC = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 125°C)
IR
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C)
trr
V
2.7
1.65
mA
10
70
30
ns
1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm2 Cu area.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
100
IF, FORWARD CURRENT (AMPS)
IF, FORWARD CURRENT (AMPS)
100
150°C
10
125°C
100°C
1
25°C
0.1
0.01
0
1.0
0.5
1.5
2.0
2.5
125°C
25°C
0.1
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1.0
2.0
3.0
4.0
5.0
6.0
VF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
1.0E−4
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
1.0E−3
IR, REVERSE CURRENT (AMPS)
150°C
125°C
1.0E−5
150°C
1.0E−4
100°C
1.0E−6
125°C
100°C
1.0E−5
1.0E−7
1.0E−6
1.0E−8
1.0E−9
100°C
1
0.01
3.0
150°C
10
0
100
200
300
25°C
1.0E−7
25°C
400
500
600
1.0E−8
0
100
200
300
400
500
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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2
600
MURHD560T4, MURHD560W1T4
100
PFO, AVERAGE POWER DISSIPATION
(WATTS)
20
80
70
60
50
40
30
20
10
0
0
25
50
75
125
100
175
150
200
TJ = 175°C
15
SQUARE
WAVE
10
dc
5
0
0
1
2
3
4
5
6
7
VR, REVERSE VOLTAGE (VOLTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Typical Capacitance
Figure 6. Forward Power Dissipation
IF, AVERAGE FORWARD CURRENT (AMPS)
C, CAPACITANCE (pF)
90
9
RqJC = 2.5°C/W
TJ = 175°C
dc
8
7
6
SQUARE WAVE
5
4
3
2
1
0
100
110
120
130
140
150
160
TC, CASE TEMPERATURE (°C)
Figure 7. Current Derating
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3
170
180
8
R(t), TRANSIENT THERMAL RESISTANCE
MURHD560T4, MURHD560W1T4
10
0.5
1
0.2
0.1
0.05
0.1
0.01
P(pk)
t1
Single Pulse
t2
DUTY CYCLE, D = t1/t2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (s)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response, Junction to Case
100
10
1
0.5
0.2
0.1
0.05
0.01
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 9. Thermal Response, Junction to Ambient
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4
10
100
1000
MURHD560T4, MURHD560W1T4
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
6.17
0.243
SCALE 3:1
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
3.00
0.118
1.60
0.063
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
MEGAHERTZ is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MURHD560/D
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