Siemens BF569W Pnp silicon rf transistor (for oscillators, mixer and self-oscillating mixer stages in uhf tv-tuner) Datasheet

BF 569W
PNP Silicon RF Transistor
kein Status
• For oscillators, mixer and self-oscillating
mixer stages in UHF TV-tuner
Type
Marking Ordering Code
Pin Configuration
BF 569W
LHs
1=B
Q62702-F1582
Package
2=E
3=C
SOT-323
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
35
Collector-base voltage
VCBO
40
Emitter-base voltage
VEBO
3
Collector current
IC
30
Base current
IB
5
Total power dissipation
Ptot
TS ≤ 93 °C
Values
Unit
V
mA
mW
280
Junction temperature
Tj
Storage temperature
Tstg
150
°C
- 65 ... + 150
Thermal Resistance
Junction - soldering point
RthJS
Semiconductor Group
1
≤ 205
K/W
Nov-28-1996
BF 569W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-base cutoff current
35
-
-
ICBO
VCB = 20 , IE = 0
DC current gain
V
nA
-
-
100
hFE
IC = 3 mA, VCE = 10 V
20
50
-
AC Characteristics
Transition frequency
fT
IC = 30 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
-
pF
-
0.32
-
-
0.15
-
Cce
VCE = 10 V, VBE = vbe = 0 , f = 1 MHz
Noise figure
950
Ccb
VCB = 10 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
MHz
F
dB
IC = 3 mA, VCE = 10 V, f = 800 MHz
ZS = 60 Ω
Cannon-base power gain
-
4.5
-
-
14.8
-
Gp
IC = 3 mA, VCB = 10 V, f = 800 MHz
RL = 500 Ω
Semiconductor Group
2
Nov-28-1996
BF 569W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot
TS
200
150
TA
100
50
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
10 3
K/W
RthJS
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
tp
0
3
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
0
10 s 10
\undefined &SYMBOL.TP
Nov-28-1996
BF 569W
Transition frequency fT = f (IC)
f = 100MHz
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
VCE = 10V
Semiconductor Group
4
Nov-28-1996