LED - Chip ELС-635-14-3 Preliminary 10.04.2007 rev. 04/07 Radiation Type Technology Electrodes Red Standard AlInGaP/GaAs P (anode) up typ. dimensions (µm) 310 Ø120 typ. thickness 260 (±20) µm cathode gold alloy, 0.5 µm anode gold alloy, 1.5 µm LED-02 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.0 2.5 V Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Radiant power1 IF = 20 mA Φe 1.3 mW Radiant power2 IF = 20 mA Φe 2.5 mW Luminous intensity1 IF = 20 mA IV 55 70 mcd Peak wavelength IF = 20 mA λP 630 635 Dominant wavelength IF = 20 mA λD 626 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 18 nm 5 V 640 nm 1 Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment 2 Labeling Type Lot N° ΙV(typ) [mcd] VF(typ) [V] Quantity ELС-635-14-3 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1