2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES • Low RDS(on) • Ease of Paralleling • Qualified to MIL-PRF-19500/557 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25°C PART NUMBER 2N6796 2N6798 2N6800 2N6802 S C H E M ATIC V DS, Volts 100 200 400 500 R DS(on) .18 .40 1.00 1.50 ID, A m p s 8.0 5.5 3.0 2.5 MECHANICAL OUTLINE Pin Connection Pin 1: Source Pin 2: Gate Pin 3: Drain (Case) 7 03 R0 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25°C JANTXV, JANTX, 2N6796 Units Continuous Drain Current 8.0 A ID @ VGS = 10V, TC = 100°C Continuous Drain Current 5.0 A 1 ID M Pulsed Drain Current 32 A P D @ TC = 25°C Maximum Power Dissipation 25 W Linear Derating Factor 0.2 W/°C ± 20 V VG S Gate-Source Voltage EA S TJ TS T G Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature 2 4.3 4 mJ -55 to 150 300(.06 from case for 10 sec) °C °C ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain (“Miller”) Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. 100 ----2.0 ----------------------- Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Units V Test Conditions VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 5.0 A 3 VG S = 10 V, ID = 8.0 A 3 VDS = VG S,ID = 250 µA VD S = 80 V, VG S = 0V VD S = 80 V, VG S = 0V, TJ = 125°C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 8A VD S = 50 V See note 4 VD D = 30 V, ID = 5.0 A, RG =7.5 See note 4 ----------------------------- .18 .195 4.0 25 250 100 -100 28.5 6.3 16.6 30 75 40 45 nA nA nC nC nC ns ns ns ns Typ. ----- Max. 1.5 300 Units V ns Typ. --0.21 --- Max. 5.0 --175 Units Test Conditions °C/W Mounting surface flat, smooth, and greased V µA Test Conditions TJ = 25°C, IS = 8.0A 3,VG S = 0 V 3 TJ = 25°C, IF= 8.0 A,di/dt < 100 A/µs 3 Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient 1. 2. 3. 4. Min. ------- Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 25 V, Starting TJ = 25°C, L = 100 µH + 10%, RG = 25 , Peak IL = 8.0 A Pulse width < 300 µs; Duty Cycle < 2 % See MIL-S-19500/557 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25°C JANTXV, JANTX, 2N6798 Units Continuous Drain Current 5.5 A ID @ VGS = 10V, TC = 100°C Continuous Drain Current 3.5 A ID M Pulsed Drain Current 22 A P D @ TC = 25°C Maximum Power Dissipation 25 W Linear Derating Factor 0.2 W/°C 1 VG S Gate-Source Voltage EA S TJ TS T G Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature ± 20 2 2.0 V 4 mJ -55 to 150 300(.06 from case for 10 sec) °C °C ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain (“Miller”) Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. 200 ----2.0 ----------------------- Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Units V Test Conditions VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 3.5 A 3 VG S = 10 V, ID = 5.5 A 3 VDS = VG S,ID = 250 µA VD S = 160 V, VG S = 0V VD S = 160 V, VG S = 0V, TJ = 125°C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 5.5 A VD S = 100 V See note 4 VD D = 77 V, ID = 3.5 A, RG =7.5 See note 4 ----------------------------- .40 .42 4.0 25 250 100 -100 42.1 5.3 28.1 30 50 50 40 nA nA nC nC nC ns ns ns ns Typ. ----- Max. 1.4 500 Units V ns Typ. --0.21 --- Max. 5.0 --175 Units Test Conditions °C/W Mounting surface flat, smooth, and greased V µA Test Conditions TJ = 25°C, IS = 5.5 A 3,VG S = 0 V 3 TJ = 25°C, IF= 5.5 A,di/dt < 100 A/µs 3 Thermal Resistance Parameter R thJC Junction-to-Case R thCS Case-to-sink R thJA Junction-to-Ambient 1. 2. 3. 4. Min. ------- Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50 V, Starting TJ = 25°C, L = 100 µH + 10%, RG = 25 , Peak IL = 5.5 A Pulse width < 300 µs; Duty Cycle < 2 % See MIL-S-19500/557 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25°C JANTXV, JANTX, 2N6800 Units Continuous Drain Current 3.0 A ID @ VGS = 10V, TC = 100°C Continuous Drain Current 2.0 A ID M Pulsed Drain Current 14 A P D @ TC = 25°C Maximum Power Dissipation 25 W Linear Derating Factor 0.2 W/°C 1 VG S Gate-Source Voltage EA S TJ TS T G Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature ± 20 2 0.51 V 4 -55 to 150 300(.06 from case for 10 sec) mJ °C °C ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain (“Miller”) Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. 400 V Test Conditions VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 2.0 A 3 VG S = 10 V, ID = 3.0 A 3 VDS = VG S,ID = 250 µA VD S = 320 V, VG S = 0V VD S = 320 V, VG S = 0V, TJ = 125°C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 3.0A VD S = 200 V See note 4 VD D = 176 V, ID = 2 A, RG =7.5 See note 4 ----------------------------- 1.0 1.10 4.0 25 250 100 -100 33 5.8 16.6 30 35 55 35 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.4 700 Units V ns Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 5.0 --175 Units Test Conditions °C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- Units Min. ------- V µA Test Conditions TJ = 25°C, IS = 3 A 3,VG S = 0 V TJ = 25°C, IF= 3.0 A,di/dt<100A/µs Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50 V, Starting TJ = 25°C, L = 100 µH + 10%, RG = 25 , Peak IL = 3.0 A Pulse width < 300 µs; Duty Cycle < 2 % See MIL-S-19500/557 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 3 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted Parameter ID @ VGS = 10V, TC = 25°C JANTXV, JANTX, 2N6802 Units Continuous Drain Current 2.5 A ID @ VGS = 10V, TC = 100°C Continuous Drain Current 1.5 A 11 A 1 ID M Pulsed Drain Current P D @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VG S Gate-Source Voltage EA S TJ TSTG Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature 2 25 W 0.20 W/°C ± 20 V .35 4 mJ -55 to 150 300 (.06 from case for 10 sec) °C °C ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-Source Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IG S S Gate -to-Source Leakage Forward IG S S Gate -to-Source Leakage Reverse Q G(on) On-state Gate Charge QGS Gate-to-Source Charge Q Gd Gate-to-Drain (“Miller”) Charge tD(on) Turn-On Delay Time tr Rise Time tD(off) Turn-Off Delay Time tr Fall Time Typ. Max. 500 V Test Conditions VG S = 0V, ID =1.0 mA, VG S = 10 V, ID = 1.5 A 3 VG S = 10 V, ID = 2.5 A 3 VDS = VG S,ID = 250 µA VD S = 400 V, VG S = 0V VD S = 400 V, VG S = 0V, TJ = 125°C VG S = 20 V VG S = -20 V VG S = 10 V, ID = 2.5 A VD S = 250 V See note 4 VD D = 225 V, ID = 1.5 A, RG = 7.5 See note 4 ----------------------------- 1.5 1.6 4.0 25 250 100 -100 29.5 4.5 28.1 30 30 55 30 nA nA nC nC nC ns ns ns ns Source-Drain Diode Ratings and Characteristics Parameter Min. Diode Forward Voltage --VS D ttrr Reverse Recovery Time --- Typ. ----- Max. 1.4 900 Units V ns Thermal Resistance Parameter Junction-to-Case R thJC R thCS Case-to-sink R thJA Junction-to-Ambient Typ. --0.21 --- Max. 5.0 --175 Units Test Conditions °C/W Mounting surface flat, smooth, and greased 1. 2. 3. 4. ----2.0 ----------------------- Units Min. ------- V µA Test Conditions TJ = 25°C, IS = 2.5 A 3,VG S = 0 V TJ = 25°C, IF= 2.5 A,di/dt<100A/µs 3 Typical socket mount Repetitive Rating: Pulse width limited by maximum junction temperature. @VD D= 50 V, Starting TJ = 25°C, L = 100 uH + 10%, RG = 25 , Peak IL = 2.5 A Pulse width < 300 µs; Duty Cycle < 2 % See MIL-S-19500/557 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246