LRC BAP51-02 General purpose pin diode Datasheet

LESHAN RADIO COMPANY, LTD.
General purpose PIN diode
BAP51 – 02
FEATURES
· Low diode capacitance
· Low diode forward resistance.
APPLICATIONS
· General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 small SMD plastic package.
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
PARAMETER
continuous reverse voltage
IF
P tot
continuous forward current
total power dissipation
T stg
Tj
storage temperature
junction temperature
I
CONDITIONS
MIN.
–
MAX.
60
UNIT
V
–
–
50
715
mA
mW
-65
-65
+150
+150
°C
°C
T s =90°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL
PARAMETER
VF
VR
forward voltage
reverse voltage
IR
Cd
reverse current
diode capacitance
r D diode forward resistance
MIN
TYP.
MAX.
UNIT
I F =50 mA
I R =10mA
CONDITIONS
–
50
0.95
–
1.1
–
V
V
V R =50 V
V R = 0; f = 1 MHz
–
–
–
0.4
100
–
nA
pF
V R = 1 V; f = 1 MHz
V R = 5 V; f = 1 MHz
–
–
0.3
0.2
0.55
0.35
pF
pF
I F = 0.5 mA; f = 100 MHz; note 1
I F = 1 mA; f = 100 MHz; note 1
–
–
5.5
3.6
9
6.5
Ω
Ω
I F = 10 mA; f = 100 MHz; note 1
–
1.5
2.5
Ω
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S24–1/2
LESHAN RADIO COMPANY, LTD.
BAP51-02
500
10
f = 100 MHz; T j =25°C
400
r D( Ω)
C d (pF)
5
300
200
2
100
1
10 -1
1
f = 1 MHz; T j =25°C
0
10
0
I F (mA )
8
12
16
20
VR(V)
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
Fig.1 Forward resistance as a function of
forward current; typical values.
0
0
-5
-0.5
(1) I F =10 mA.
(2) I F = 1 mA.
(3) I F = 0.5 mA.
-1
|s 21| 2(dB)
|s 21| 2(dB)
4
-1.5
-10
-15
-2
-20
Diode inserted in series with a 50 Ω stripline circuit and
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
biased via the analyzer Tee network.
Tamb =25°C.
Tamb =25°C.
-2.5
0.5
1
1.5
2
2.5
3
f (GHz )
Fig.3 Insertion loss ( |s 21| 2 ) of the diode in on-state
as a function of frequency; typical values.
-25
0.5
1
1.5
2
2.5
3
f (GHz )
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S24–2/2