HUR1520S, HUR1530S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263(D2PAK) C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode VRSM V 200 300 HUR1520S HUR1530S Symbol VRRM V 200 300 Test Conditions 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC .380 .405 .245 .320 .100 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 R 0.46 0.74 .018 .029 Maximum Ratings Unit IFRMS IFAVM TC=135oC; rectangular, d=0.5 35 15 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 140 A 0.8 mJ 0.3 A EAS IAR o TVJ=25 C; non-repetitive; IAS=2.5A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight typical o C 95 W 0.4...0.6 Nm 2 g HUR1520S, HUR1530S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 100 0.5 uA mA VF IF=15A; TVJ=150oC TVJ=25oC 1.21 1.68 V RthJC RthCH trr IRM 1.6 0.5 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC 30 o VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C K/W ns 2.7 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR1520S, HUR1530S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 40 20 500 TVJ = 100°C nC A VR = 150V 400 30 IF TVJ = 100°C A VR = 150V IF = 30A 15 IF = 15A IF = 30A 300 TVJ = 100°C 20 IRM Qr TVJ = 150°C IF = 7.5A IF = 15A TVJ = 25°C 10 IF = 7.5A 200 10 5 100 0 0 V 1 0 100 2 0 A/us 1000 -diF/dt VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 80 trr 1.2 0.85 TVJ = 100°C IF = 15A 12 VFR IF = 30A us 0.80 tfr tfr VFR 10 IF = 15A 1.0 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt VR = 150V 60 400 V 70 Kf 200 14 TVJ = 100°C ns 0 0.75 IF = 7.5A IRM 50 8 0.70 40 6 0.65 Qr 0.8 0.6 30 0 40 80 120 °C 160 4 0 TVJ 200 400 600 800 1000 A/us 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.60 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC 0.1 0.01 0.001 0.00001 0 0.0001 0.001 0.01 s 0.1 t Fig. 7 Transient thermal resistance junction to case 1 Rthi (K/W) ti (s) 0.908 0.35 0.342 0.005 0.0003 0.017