SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw CEFB201 Thru CEFB205 Reverse Voltage: 50 - 600 Volts Forward Current: 2.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.155(3.94) 0.130(3.30) 0.185(4.70) 0.160(4.06) 0.012(0.31) 0.006(0.15) Mechanical Data 0.096(2.44) 0.083(2.13) Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.050(1.27) 0.030(0.76) 0.008(0.20) 0.203(0.10) 0.220(5.59) 0.200(5.08) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Parameter Symbol CEFB 201 CEFB 202 CEFB 203 CEFB 204 CEFB 205 Unit Max. Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 V Max. DC Blocking Voltage V DC 50 100 200 400 600 V V RMS 35 70 140 280 420 V Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) I FSM Max. Average Forward Current Io Max. Instantaneous Forward Current at 2.0 A VF Reverse recovery time Trr Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C IR 2.0 0.875 25 A 1.1 1.25 35 50 V nS 5.0 250 uA 15 C/W C Max. Thermal Resistance (Note 1) R Operating Junction Temperature Tj -55 to +150 Storage Temperature T STG -55 to +150 JL A 35 40 C Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas. MDS0210023A Page 1 SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CEFB201 Thru CEFB205) Fig.2 - Forward Characteristics Fig. 1 - Reverse Characteristics 100 10 10 Forward current ( A ) Reverse Current ( uA ) CEFB201-203 Tj=125 C 1.0 Tj=75 C 1.0 CEFB204 CEFB205 0.1 0.01 0.1 Tj=25 C Pulse width 300uS 4% duty cycle Tj=25 C 0. 01 0 0.001 20 40 60 80 100 120 140 0 0.2 0.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance Fig. 4 - Non Repetitive Forward Surge Current 50 Peak Surge Forward Current ( A ) 200 100 Junction Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tj=25 C 10 8.3mS Single Half Sine Wave JEDEC methode 40 30 Tj=25 C 20 10 0 2 0.1 1.0 10 100 1 Reverse Voltage (V) 5 10 50 1 00 Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 2.8 trr 10W NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE Average Forward Current ( A ) 50W NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 2.4 2.0 1.6 1.2 0.8 Single Phase Half Wave 60Hz 0.4 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm MDS0210023A Page 2