Infineon AUIRFS3004-7P Automotive grade Datasheet

AUIRFS3004-7P
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
RDS(on) typ.
max.
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
Base Part Number
Package Type
AUIRFS3004-7P
D2Pak 7 Pin
40V
0.90m
ID (Silicon Limited)
1.25m
400A
ID (Package Limited)
240A
D2Pak 7 Pin
G
D
S
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS3004-7P
AUIRFS3004-7PTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
400
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
280
240
IDM
PD @TC = 25°C
Pulsed Drain Current 
Maximum Power Dissipation
1610
380
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case 
Junction-to-Ambient ( PCB Mount) 
Units
A
W
2.5
± 20
290
See Fig.14,15, 22a, 22b
2.0
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
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AUIRFS3004-7P
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
40
Typ. Max. Units
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.038 –––
V/°C Reference to 25°C, ID = 5mA 
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.90
1.25
m VGS = 10V, ID = 195A 
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
RG
Forward Trans conductance
Gate Resistance
IDSS
Drain-to-Source Leakage Current
1300
–––
–––
–––
2.0
–––
–––
–––
20
–––
–––
250
S VDS = 10V, ID = 195A

VDS = 40V, VGS = 0V
µA
VDS = 40V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VDS = VGS, ID = 250µA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
42
65
95
23
240
91
160
9130
2020
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
990
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
2590
–––
VDD = 26V
ID = 240A
ns
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
2650
–––
VGS = 0V, VDS = 0V to 32V
Min.
Typ. Max. Units
–––
––– 400
–––
–––
1610
–––
–––
–––
–––
–––
–––
–––
49
51
37
41
3.2
1.3
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
VSD
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 180A
VDS = 20V
nC
VGS = 10V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 195A,VGS = 0V 
TJ = 25°C
VDD = 34V
ns
TJ = 125°C
IF = 240A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.01mH, RG = 25, IAS = 240A, VGS =10V. Part not recommended for use above this value.
 ISD 240A, di/dt 740A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
 R is measured at TJ approximately 90°C.
RJC value shown is at time zero
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AUIRFS3004-7P
1000
1000
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
100
10
1
4.5V
Tj = 25°C
0.1
1
10
100
0.1
1000
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
Tj = 175°C
10
V DS, Drain-to-Source Voltage (V)
100
T J = 175°C
T J = 25°C
10
1
VDS = 25V
60µs PULSE WIDTH
0.1
3
4
5
6
7
ID = 195A
VGS = 10V
1.5
1.0
0.5
8
-60 -40 -20 0 20 40 60 80 100 120 140160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
100000
14.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
VGS, Gate-to-Source Voltage (V)
ID = 180A
Coss = Cds + Cgd
C, Capacitance (pF)
60µs PULSE WIDTH
4.5V
60µs PULSE WIDTH
0.1
C iss
C oss
10000
C rss
1000
100
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
12.0
VDS = 32V
VDS = 20V
10.0
8.0
6.0
4.0
2.0
0.0
0
50
100
150
200
250
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-10-20
AUIRFS3004-7P
10000
T J = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.0
0.5
1.0
1.5
1
2.0
0
1
VSD , Source-to-Drain Voltage (V)
ID, Drain Current (A)
Limited By Package
300
240
180
120
60
0
50
75
100
125
150
100
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
420
25
10
VDS , Drain-to-Source Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
360
DC
50
Id = 5mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100 120 140160 180
175
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
1200
EAS , Single Pulse Avalanche Energy (mJ)
3.5
2.5
Energy (µJ)
ID
44A
80A
BOTTOM 240A
TOP
1000
3.0
2.0
1.5
1.0
0.5
800
600
400
200
0
0.0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
Fig 10. Drain-to-Source Breakdown Voltage
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
2015-10-20
AUIRFS3004-7P
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
J
0.05
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
3
2
4
3
C
4
Ci= iRi
Ci= iRi
1E-005
I (sec)
0.00757
0.000006
0.06508
0.000064
0.18313
0.001511
0.14378
0.009800
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
320
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 240A
EAR , Avalanche Energy (mJ)
280
240
200
160
120
80
40
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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4.5
10
4.0
9
3.5
8
3.0
2.5
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
AUIRFS3004-7P
ID = 250µA
ID = 1.0mA
2.0
ID = 1.0A
IF = 96A
V R = 34V
TJ = 25°C
TJ = 125°C
7
6
5
4
1.5
3
1.0
-75 -50 -25 0
2
25 50 75 100 125 150 175 200
100
200
T J , Temperature ( °C )
400
500
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
12
140
IF = 144A
V R = 34V
11
10
TJ = 25°C
TJ = 125°C
9
8
QRR (nC)
IRRM (A)
300
7
6
120
IF = 96A
V R = 34V
100
TJ = 25°C
TJ = 125°C
80
60
5
4
40
3
2
20
100
200
300
400
500
100
200
diF /dt (A/µs)
300
400
500
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
180
IF = 144A
V R = 34V
160
TJ = 25°C
TJ = 125°C
QRR (nC)
140
120
100
80
60
40
20
100
200
300
400
500
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRFS3004-7P
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2015-10-20
AUIRFS3004-7P
D2Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches))
D2Pak - 7 Pin Part Marking Information
Part Number
AUFS3004-7P
Date Code
YWWA
IR Logo
XX

Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
2015-10-20
AUIRFS3004-7P
D2Pak - 7 Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
2015-10-20
AUIRFS3004-7P
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
D2-Pak 7 Pin
MSL1
Class M4 (+/- 800V)†
AEC-Q101-002
Class H3A (+/- 6000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/4/2015
10/20/2015
Comments




Updated datasheet based on new IR corporate template .
Updated part marking from "AUS3004-7P" to "AUFS3004-7P" on page 10.
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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