ASI ASI10665 Npn silicon rf power transistor Datasheet

UFT15-28S
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .380 4L STUD
DESCRIPTION:
.112x45°
A
The ASI UFT15-28S is Designed for
B
FEATURES:
ØC
•
•
• Omnigold™ Metalization System
D
H
J
G
#8-32 UNC-2A
F
MAXIMUM RATINGS
E
IC
10 A
VCB
60 V
35 V
VCE
PDISS
O
140 W @ TC = 25 C
-65 OC to +200 OC
TJ
O
-65 C to +150 C
θ JC
1.5 OC/W
CHARACTERISTICS
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
H
.090 / 2.29
.100 / 2.54
I
.155 / 3.94
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10665
O
TC = 25 C
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
PGE
VCE = 25 V
IMD3
MAXIMUM
DIM
J
O
TSTG
SYMBOL
I
PREF = 16 W
RBE = 10 Ω
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
V
60
V
4.0
V
10
f = 1.0 MHz
ICQ = 3.2 A
Vision = -8 dB
Side Band = -16 dB
f = 225 MHz
UNITS
35
13.5
mA
100
---
80
pF
14.5
Snd. = -7 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5
dB
-55
dBc
REV. A
1/1
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