CEL NE3510M04 Hetero junction field effect transistor Datasheet

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Low noise figure and high associated gain
NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA
NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3510M0 4
Order Number
N E 35 10 M0 4- A
NE3510M04-T2
NE3510M04-T2-A
Package
Quantity
Marking
Flat-lead 4-pin thin-
50 p cs ( N on r eel )
V 81
type super minimold
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
3 kpcs/reel
(M04) (Pb-Free)
Supplying Form
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3510M04-A
ABSOLUTE MAXIMUM RATINGS (TA = +25$C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
<3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
140
+A
125
mW
Total Power Dissipation
Ptot
Note
Channel Temperature
Tch
+150
$C
Storage Temperature
Tstg
<65 to +150
$C
Note Mounted on 1.08 cm2 = 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. PG10676EJ01V0DS (1st edition)
Date Published July 2007 NS
2007
NE3510M04
RECOMMENDED OPERATING CONDITIONS (TA = +25$C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
<
2
3
V
Drain Current
ID
<
15
30
mA
Input Power
Pin
<
<
0
dBm
Drain to Source Voltage
ELECTRICAL CHARACTERISTICS (TA = +25$C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = <3 V
<
0.5
10
+A
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
42
70
97
mA
VGS (off)
VDS = 2 V, ID = 100 +A
<0.35
<0.7
<1.10
V
Transconductance
gm
VDS = 2 V, ID = 15 mA
70
<
<
mS
Noise Figure
NF
VDS = 2 V, ID = 15 mA, f = 4 GHz
<
0.45
0.65
dB
Associated Gain
Ga
14.5
16
<
dB
<
+11
<
dBm
Gate to Source Cutoff Voltage
Gain 1 dB Compression
Output Power
2
PO (1 dB)
VDS = 2 V, ID = 15 mA (Non-RF),
f = 4 GHz
Data Sheet PG10676EJ01V0DS
NE3510M04
TYPICAL CHARACTERISTICS (TA = +25$C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
Mounted on Glass Epoxy PCB
(1.08 cm2 = 1.0 mm (t) )
Drain Current ID (mA)
200
150
100
80
70
60
50
40
30
10
100
150
200
0
–1.0
250
–0.8
–0.6
–0.4
–0.2
Ambient Temperature TA ($C)
Gate to Source Voltage VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Ga
0.6
0.5
0.4
0.3
0.2
0.1
0.0
NFmin
0
5
10
24
VDS = 2 V
22
ID = 15 mA
20
18
16
14
12
10
8
6
4
2
0
15
100
90
Drain Current ID (mA)
1.2
1.1
1.0
0.9
0.8
0.7
0
VGS = 0 V
80
–0.1 V
70
–0.2 V
60
–0.3 V
50
40
–0.4 V
30
–0.5 V
20
–0.6 V
10
–0.7 V
0
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.2
f = 2.0 GHz
1.1
VDS = 2 V
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Ga
NFmin
5
10
15
20
25
30
24
22
20
18
16
14
12
10
8
6
4
2
0
35
Minimum Noise Figure NFmin (dB)
Frequency f (GHz)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Drain Current ID (mA)
Ga
NFmin
5
10
15
20
24
f = 4.0 GHz
22
VDS = 2 V
20
18
16
14
12
10
8
6
4
2
0
25
30
35
Associated Gain Ga (dB)
50
Associated Gain Ga (dB)
Minimum Noise Figure NFmin (dB)
VDS = 2 V
20
50
0
Minimum Noise Figure NFmin (dB)
90
Associated Gain Ga (dB)
Total Power Dissipation Ptot (mW)
250
Drain Current ID (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10676EJ01V0DS
3
NE3510M04
OUTPUT POWER, GAIN, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
20
60
f = 4 GHz, VDS = 2 V
ID = 15 mA set (Non-RF)
Gain
50
Pout (1 tone)
10
40
5
30
0
20
ID
–5
–10
–20
–15
–10
–5
10
IG
0
Drain Current ID (mA)
Gate Current IG (mA)
Output Power Pout (1 tone) (dBm)
Gain (dB)
15
5
10
0
15
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3, DRAIN CURRENT
vs. INPUT POWER
20
50
f = 4 GHz, VDS = 2 V
ID = 15 mA set (Non-RF)
OIP3 = +20 dBm
45
Pout
10
40
0
35
IIP3 = +4 dBm
–10
30
IM3 (H)
–20
25
IM3 (L)
–30
20
–40
15
–50
ID
–60
–70
–40
5
–30
–20
–10
Input Power Pin (1 tone) (dBm)
Remark The graphs indicate nominal characteristics.
4
10
Data Sheet PG10676EJ01V0DS
0
0
10
Drain Current ID (mA)
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
30
NE3510M04
S-PARAMETERS
S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a
microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] A [Device Parameters]
URL http://www.ncsd.necel.com/microwave/index.html
Data Sheet PG10676EJ01V0DS
5
NE3510M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
1.
2.
3.
4.
6
Source
Drain
Source
Gate
Data Sheet PG10676EJ01V0DS
2.0±0.1
2
1
1.25
3
4
0.30+0.1
–0.05
0.11+0.1
–0.05
PIN CONNECTIONS
1.30
0.65
1.30
3
4
1
0.30+0.1
–0.05
0.59±0.05
(1.05)
0.65
0.60
0.65
1.25
2
1.25±0.1
V81
2.0±0.1
(Bottom View)
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05±0.1
NE3510M04
MOUNTING PAD DIMENSIONS (REFERENCE ONLY)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)
4
0.5
1
1.3
1.25
0.6
3
2
1.6
0.6
Data Sheet PG10676EJ01V0DS
7
NE3510M04
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
S o l d e r i n g C on ditio ns
Co nd ition S ymbo l
Peak temperature (package surface temperature)
: 260$C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220$C or higher
: 60 seconds or less
Preheating time at 120 to 180$C
: 120(30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350$C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Caution Do not use different soldering methods together (except for partial heating).
8
Data Sheet PG10676EJ01V0DS
IR260
HS350
NE3510M04
% The information in this document is current as of July, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
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M8E 02. 11-1
Data Sheet PG10676EJ01V0DS
9
NE3510M04
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
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