Bulletin I27130 rev. G 10/02 IRK.26 SERIES ADD-A-pakTM GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Benefits High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 27 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRK.26 Units 27 A IO(RMS) (*) 60 A ITSM @ 50Hz 400 A IFSM @ 60Hz 420 A @ 50Hz 800 A2s @ 60Hz 730 A2s 8000 A2√s IT(AV) or IF(AV) @ 85°C 2 I t I2√t VRRM range 400 to 1600 V TSTG - 40 to 125 o TJ - 40 to125 o C C (*) As AC switch. www.irf.com 1 IRK.26 Series Bulletin I27130 rev. G 10/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code - IRK.26 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 04 400 500 400 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 IRRM IDRM 125°C mA 15 On-state Conduction Parameters IT(AV) IF(AV) IRK.26 Units Conditions Max. average on-state current (Thyristors) 27 180o conduction, half sine wave, Max. average forward 27 TC = 85oC current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch 60 I(RMS) A or I(RMS) ITSM Max. peak, one cycle 400 t=10ms No voltage or non-repetitive on-state 420 t=8.3ms reapplied IFSM or forward current 335 t=10ms 100% VRRM 350 t=8.3ms reapplied 470 t=10ms TJ = 25oC, 490 t=8.3ms no voltage reapplied 800 t=10ms No voltage I2t Max. I2t for fusing 730 560 510 2 A s 1100 1000 I2√t Max. I2√t for fusing (1) VT(TO) Max. value of threshold rt VTM 8000 0.92 voltage (2) 0.95 Max. value of on-state 12.11 slope resistance (2) 11.82 A2√s V mΩ Max. peak on-state or VFM forward voltage di/dt Max. non-repetitive rate of rise of turned on 1.95 V 150 A/µs Max. holding current 200 IL Max. latching current 400 Initial TJ = TJ max. t=8.3ms reapplied t=10ms TJ = 25oC, t=8.3ms no voltage reapplied t= 0.1 to 10ms, no voltage reappl. TJ =TJ max TJ = TJ max Low level (3) High level (4) Low level (3) TJ = TJ max High level (4) ITM = π x IT(AV) TJ = 25oC IFM = π x IF(AV) ITM =π x I T(AV), I = 500mA, g TJ = 25oC, anode supply = 6V, mA 2 100% VRRM tr < 0.5 µs, tp > 6 µs IH (4) I > π x IAV reapplied t=10ms Initial TJ = TJ max. TJ = 25oC, from 0.67 VDRM, current (1) I2t for time tx = I2√t x √tx t=8.3ms Sinusoidal half wave, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7% x π x IAV < I < π x IAV www.irf.com IRK.26 Series Bulletin I27130 rev. G 10/02 Triggering Parameters PGM IRK. 26 Max. peak gate power 2.5 IGM 2.5 Max. peak gate current -VGM Max. peak negative TJ = - 40°C V 2.5 TJ = 25°C 1.7 TJ = 125°C 270 150 Max. gate current required to trigger TJ = - 40°C TJ = 25°C mA TJ = 125°C 80 Max. gate voltage Anode supply = 6V resistive load Anode supply = 6V resistive load o 0.25 V TJ = 125 C, rated VDRM applied 6 mA TJ = 125oC, rated VDRM applied IRK. 26 Units 15 mA 2500 (1 min) V that will not trigger IGD A 4.0 Max. gate voltage required to trigger VGD W 10 gate voltage IGT Conditions 10 PG(AV) Max. average gate power VGT Units Max. gate current that will not trigger Blocking Parameters IRRM IDRM Conditions Max. peak reverse and off-state leakage current TJ = 125oC, gate open circuit at VRRM, VDRM VINS RMS isolation voltage 50 Hz, circuit to base, all terminals 3500 (1 sec) dv/dt Max. critical rate of rise shorted 500 TJ = 125oC, linear to 0.67 VDRM, V/µs (5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90. Thermal and Mechanical Specifications Parameters IRK.26 TJ Junction operating temperature range - 40 to 125 Tstg Storage temp. range - 40 to 125 Units Conditions °C RthJC Max. internal thermal resistance, junction 0.31 Per module, DC operation to case K/W RthCS Typical thermal resistance T Mounting torque ± 10% A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound 5 to heatsink Nm busbar wt Mounting surface flat, smooth and greased 0.1 case to heatsink 3 Approximate weight 110 (4) Case style gr (oz) TO-240AA JEDEC ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRK.26 Sine half wave conduction 180o 0.23 www.irf.com 120o 0.27 90o 0.34 60o 0.48 Rect. wave conduction 30o 0.73 180o 0.17 120o 0.28 90o 0.36 60o 0.49 30o 0.73 Units °C/W 3 IRK.26 Series Bulletin I27130 rev. G 10/02 Ordering Information Table Device Code IRK T 26 1 2 3 / 16 A S90 4 5 6 IRK.27 types With no auxiliary cathode 1 - Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: * * Available with no auxiliary cathode. To specify change: 26 to 27 e.g. : IRKT27/16A etc. S90 = dv/dt 1000 V/µs No letter = dv/dt 500 Vµs Outline Table Dimensions are in millimeters and [inches] IRKT IRKH (1) ~ (1) ~ + (2) + (2) + (2) (3) (3) (3) G1 K1 (4) (5) IRKN IRKL (1) ~ K2 G2 (7) (6) G1 K1 (4) (5) (1) - (2) + + (3) K2 G2 (7) (6) G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.26 Series IRK.26.. Series R thJC (DC) = 0.62 K/W 120 110 Conduction Angle 100 30° 60° 90° 90 0 5 10 15 25 30 120 110 Conduction Period 100 30° 60° 90° 90 120° 180° 80 0 10 20 DC 30 40 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 40 RMS Limit 20 Conduction Angle IRK.26.. Series Per Junction T J = 125°C 10 0 5 10 15 20 25 30 70 DC 180° 120° 90° 60° 30° 60 50 50 RMS Limit 40 30 Conduction Period 20 IRK.26.. Series Per Junction T J = 125°C 10 0 0 10 20 30 40 50 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 400 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 300 250 200 IRK.26.. Series Per Junction 150 IRK.26.. Series R thJC (DC) = 0.62 K/W Fig. 1 - Current Ratings Characteristics 180° 120° 90° 60° 30° 30 130 Average On-state Current (A) 50 0 20 180° Maximum Average On-state Power Loss (W) 80 120° Maximum Allowable Case Temperature (°C) 130 1 10 100 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I27130 rev. G 10/02 400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 350 300 250 200 IRK.26.. Series Per Junction 150 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.26 Series Bulletin I27130 rev. G 10/02 R thSA = 0.1 K/ W W K/ W K /W 5 0 .3 K/ K/ W lta - De 1. 60 40 3K /W Conduction Angle 30 4 K/ W IRK.26.. Series Per Module T J = 125°C 20 10 0 10 20 R 2K /W 50 0 0.5 7 70 W K/ 80 0. 180° 120° 90° 60° 30° 90 1 Maximum Total On-state Power Loss (W) 100 30 40 50 8 K/W 0 60 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total RMS Output Current (A) Fig. 7 - On-state Power Loss Characteristics 10 20 30 40 50 W R 0 K/ 1K 2 x IRK.26.. Series Single Phase Bridge Connected T J = 125°C 50 K/ a el t 100 0.7 -D 150 5 /W 180° (Sine) 180° (Rect) K .1 =0 W W 0. 0 K/ K/ 200 SA R th 0.2 3 0. Maximum Total Power Loss (W) 250 W /W 1.5 K/W 3 K/W 8 K/W 0 60 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Total Output Current (A) Fig. 8 - On-state Power Loss Characteristics 0 10 20 30 40 50 60 Total Output Current (A) 70 K/ W R 50 K/ W a 3 x IRK.26.. Series Three Phase Bridge Connected TJ = 125°C elt -D 100 K/ W W K/ 0. 7 150 .1 0. 5 =0 120° (Rect) 200 A 0. 4 W K/ 0. 3 250 0 S R th 300 2 0. Maximum Total Power Loss (W) 350 K/W 1 K/ W 1.5 K /W 3 K/ W 0 80 20 40 60 80 100 120 140 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.26 Series Bulletin I27130 rev. G 10/02 Instantaneous On-state Current (A) 1000 100 T J = 25°C 10 T J = 125°C IRK.26.. Series Per Junction 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 10 - On-state Voltage Drop Characteristics 1 Steady State Value: R thJC = 0.62 K/W (DC Operation) 0.1 IRK.26.. Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (a) TJ = 125 °C 1 VGD IGD 0.1 0.001 0.01 TJ = -40 °C (b) TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) IRK.26.. Series 0.1 1 (2) (1) Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 12- Gate Characteristics www.irf.com 7 IRK.26 Series Bulletin I27130 rev. G 10/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 8 www.irf.com