BR40N20 Rev.D Nov.-2015 描述 / DATA SHEET Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package. 特征 / Features 快速切换, 低导通电阻, 低栅极电荷, 低反向传输电容,100％单脉冲雪崩能量测试。 Fast Switching, Low ON Resistance, Low Gate Charge, Low Reverse transfer capacitances,100% Single Pulse avalanche energy Test. 用途 / Applications 用于 UPS 电源，逆变器，照明。 For UPS, inverters, lightin. 内部等效电路 引脚排列 1 2 / Equivalent Circuit / Pinning 3 PIN1：G 放大及印章代码 PIN 2：D PIN 3：S / hFE Classifications & Marking 见印章说明。 See Marking Instructions. http://www.fsbrec.com 1/9 BR40N20 Rev.D Nov.-2015 极限参数 / DATA SHEET Absolute Maximum Ratings(Ta=25℃) 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit VDSS 200 V ID 40 A VGS ±20 V PD(TC=25℃) 250 W EASa1 500 mJ 5 V/ns Drain-Source Voltage Drain Current Gate-Source Voltage Power Dissipation Repetitive Avalanche Energy a2 Peak Diode Recovery dv/dt dv/dt Junction Temperature Range TJ 150 ℃ Storage Temperature Range Tstg -55 to 150 ℃ Temperature for Soldering TL 300 ℃ Thermal Resistance Junction- Case RθJC 0.65 ℃/W Thermal Resistance Junction- Ambient RθJA 62.5 ℃/W 电性能参数 / Electrical Characteristics(Ta=25℃) 参数 Parameter 符号 Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS 测试条件 Test Conditions VGS=0V VDS=200V Ta=25℃ VDS=160V Ta=125℃ ID=250μA VGS=0V 最小值 典型值 Min Typ 200 10 μA VGS=0V 200 IGSS VGS=±20V RDS(on) VGS=10V ID=20A VGS(th) VDS=VGS ID=250μA Forward Transconductance gfs VDS=15V ID=20A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 7 Turn-On Delay Time td(on) 19 Turn-On Rise Time tr Turn-Off Delay Time td(off) http://www.fsbrec.com tf 单位 Unit V Gate-Body Leakage Current Forward Static Drain-Source On-Resistance Gate Threshold Voltage Turn-Off Fall Time 最大值 Max 0.054 2.0 65 ±100 nA 0.065 Ω 4 V S 5000 VGS=0V f=1.0MHz ID=20A VGS = 10V VDS=25V VDD=100V RG = 3.9Ω 300 30 68 pF ns 25 2/9 BR40N20 Rev.D Nov.-2015 电性能参数 DATA SHEET / Electrical Characteristics(Ta=25℃) Total Gate Charge 68 Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd ID=20A VGS = 10V VDD=100V nC 17 16 Continuous Source Current IS 40 A Maximum Pulsed Current ISM 160 A Diode Forward Voltage VSD 1.5 V Reverse Recovery Time trr Reverse Recovery Charge Qrr Notes: a1：L=1.0mH, ID=31.6A, Start TJ=25℃ http://www.fsbrec.com IS=40A VGS=0V IS=20A Tj=25℃ dIF/dt=100A/us,VGS=0V 250 ns 1.5 μC a2：ISD =10A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ 3/9 BR40N20 Rev.D Nov.-2015 电参数曲线图 DATA SHEET / Electrical Characteristic Curve http://www.fsbrec.com 4/9 BR40N20 Rev.D Nov.-2015 电参数曲线图 DATA SHEET / Electrical Characteristic Curve http://www.fsbrec.com 5/9 BR40N20 Rev.D Nov.-2015 电参数曲线图 DATA SHEET / Electrical Characteristic Curve http://www.fsbrec.com 6/9 BR40N20 Rev.D Nov.-2015 外形尺寸图 DATA SHEET / Package Dimensions http://www.fsbrec.com 7/9 BR40N20 Rev.D Nov.-2015 印章说明 / DATA SHEET Marking Instructions BR **** 40N20 说明： BR： 为公司代码 40N20： 为型号代码 ****： 为生产批号代码，随生产批号变化。 Company Code Note: BR: 40N20: ****: http://www.fsbrec.com Product Type. Lot No. Code, code change with Lot No. 8/9 BR40N20 Rev.D Nov.-2015 DATA SHEET 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： Note: 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150℃, Time:60~90sec. 2、峰值温度 255±5℃，时间持续为 5±0.5sec; 2.Peak Temp.:255±5℃, Duration:5±0.5sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 包装规格 Package Type 封装形式 TO-220/F 套管包装 Package Type 封装形式 使用说明 Temp.:270±5℃ Time:10±1 sec / Packaging SPEC. 散件包装 TO-220/F 时间：10±1 sec. / BULK Units 包装数量 Dimension 包装尺寸 3 (unit：mm ) Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 200 10 2,000 5 10,000 135×190 237×172×102 560×245×195 Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 50 20 1,000 5 5,000 532×31.4×5.5 555×164×50 575×290×180 / TUBE Units 包装数量 Dimension 包装尺寸 3 (unit：mm ) / Notices http://www.fsbrec.com 9/9