FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features Description • RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low FOM RDS(on) *QG • Low Reverse Recovery Charge, Qrr = 112 nC • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification Applications • Fast Switching Speed • Synchronous Rectification for ATX / Server / Telecom PSU • RoHS Compliant • Battery Protection Circuit • Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.1 • Motor drives and Uninterruptible Power Supplies D(Pin4, tab) 4 12 3 56 7 1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source G (Pin1) D2-PAK (TO-263) S(Pin2,3,5,6,7) MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Continuous (TC = 25oC, Silicon Limited) Drain Current ID IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Power Dissipation PD - Continuous (TC = 100oC, Silicon Limited) FDB024N08BL7 80 Unit V ±20 V 229* 162* A - Continuous (TC = 25oC, Package Limited) 120 - Pulsed (Note 1) 916 A (Note 2) 917 mJ 6.0 V/ns (Note 3) (TC = 25oC) - Derate Above 25oC 246 W 1.64 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering, TL 300 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A. o C o C Thermal Characteristics Symbol Parameter FDB024N08BL7 RθJC Thermal Resistance, Junction to Case, Max. 0.61 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 1 Unit oC/W www.fairchildsemi.com FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 Part Number FDB024N08BL7 Top Mark FDB024N08B Package D2PAK-7L Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 80 - - V - 0.05 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 64 V, VGS = 0 V - - 1 VDS = 64 V, TC = 150oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 4.5 V Static Drain to Source On Resistance - 1.7 2.4 mΩ gFS Forward Transconductance VGS = 10 V, ID = 100 A VDS = 10 V, ID = 100 A - 227 - S - 10170 13530 pF - 1670 2220 pF - 35 - pF - 3025 - pF - 137 178 nC - 56 - nC - 25 - nC - 28 - nC f = 1MHz - 2.4 - Ω - 47 104 ns VDD = 40 V, ID = 100 A, VGS = 10 V, RG = 4.7 Ω - 66 142 ns - 87 184 ns - 41 92 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 10 V, ID = 100 A (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 229* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 916 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 100 A - - 1.3 V trr Reverse Recovery Time - 80 - ns Qrr Reverse Recovery Charge VGS = 0 V, VDD = 40 V, ISD = 100 A, dIF/dt = 100 A/μs - 112 - nC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. L = 3 mH, IAS = 24.72 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 2 www.fairchildsemi.com FDB024N08BL7 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 500 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 100 10 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.1 0.01 VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V o 25 C 10 o -55 C 0.1 1 VDS, Drain-Source Voltage[V] 1 2.5 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 3.5 4.0 4.5 5.0 5.5 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] VGS = 10V 1.6 1.4 VGS = 20V 1.2 100 o o 25 C 175 C 10 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 0 100 200 300 ID, Drain Current [A] 1 0.2 400 Figure 5. Capacitance Characteristics 10 VGS, Gate-Source Voltage [V] 10000 Ciss Capacitances [pF] 0.4 0.6 0.8 1.0 1.2 1.3 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 30000 1000 100 6.5 500 1.8 1.0 6.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.0 RDS(ON) [mΩ], Drain-Source On-Resistance o 175 C Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 6 4 2 0 80 3 VDS = 16V VDS = 40V VDS = 64V 8 *Note: ID = 100A 0 30 60 90 120 Qg, Total Gate Charge [nC] 150 www.fairchildsemi.com FDB024N08BL7 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.1 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.8 1.5 1.2 0.9 0.6 -80 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 100A -40 0 40 80 120 160 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 2000 1000 300 VGS= 10V 10us 250 100us 100 ID, Drain Current [A] ID, Drain Current [A] 1ms 10ms DC 10 Operation in This Area is Limited by R DS(on) 1 *Notes: o 1. TC = 25 C 0.1 1 10 VDS, Drain-Source Voltage [V] 200 150 100 50 o 2. TJ = 175 C 3. Single Pulse 0.01 0.1 o RθJC= 0.61 C/W 0 25 100 Figure 11. Eoss vs. Drain to Source Voltage 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 6 50 IAS, Avalanche Current [A] 5 EOSS, [μJ] 200 4 3 2 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0 0 20 40 60 VDS, Drain to Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 1 0.1 80 4 1 10 100 tAV, Time In Avalanche [ms] 1000 www.fairchildsemi.com FDB024N08BL7 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB024N08BL7 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 o 0.01 0.01 1. ZθJC(t) = 0.61 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.005 -5 10 ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 t2 *Notes: 0.02 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDB024N08BL7 N-Channel PowerTrench® MOSFET Figure 13. Gate Charge Test Circuit & Waveform Figure 14. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 6 www.fairchildsemi.com FDB024N08BL7 N-Channel PowerTrench® MOSFET Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 7 www.fairchildsemi.com FDB024N08BL7 N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 17. TO263 (D2PAK), Molded, 7-Lead, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO263-0R7 ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2012 Fairchild Semiconductor Corporation FDB024N08BL7 Rev.C4 9 www.fairchildsemi.com FDB024N08BL7 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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