SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 BFN19 ✪ C COMPLEMENTARY TYPE - BFN18 PARTMARKING DETAIL - DH E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage V CEO -300 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -500 mA Continuous Collector Current IC -200 mA Base Current IB -100 mA Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg -1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO -300 V I C=-100µA Collector-Emitter Breakdown Voltage V (BR)CEO -300 V I C=-1mA* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-100µA Collector Cut-Off Current I CBO -100 -20 nA µA V CB=-250V V CB=-250V, T amb=150°C Emitter Cut-Off Current I EBO -100 nA V EB=-3V Collector-Emitter Saturation Voltage V CE(sat) -0.5 V I C=-20mA, I B=-2mA Base-Emitter Saturation Voltage V BE(sat) -0.9 V I C=-20mA, I B=-2mA Static Forward Current Transfer Ratio h FE Transition Frequency fT Typ. 100 MHz I C=-20mA, V CE=-10V f=20MHz Output Capacitance C obo Typ. 2.5 pF V CB=-30V,f=1MHz 25 40 30 I C=-1mA, V CE=-10V* I C=-10mA, V CE=-10V* I C=-30mA, V CE=-10V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 45