PROCESS CPD07 Central General Purpose Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 10.4 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,170 PRINCIPAL DEVICE TYPES CR6A2GPP Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (16-September 2003) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD07 Typical Electrical Characteristics R2 (16-September 2003)