Mitsubishi CR2AM Low power use non-insulated type, glass passivation type Datasheet

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR2AM
OUTLINE DRAWING
Dimensions
in mm
10 MAX
0.5
3.2±0.2
23.7±0.5
4
∗
8 MAX
φ3.2±0.1
TYPE NAME @
VOLTAGE
CLASS
4 MAX
12 MIN
1.2±0.1
0.8
0.8
4.5 MAX
2.5 2.5
1.55±0.1
123
• IT (AV) ........................................................................... 2A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
0.5
1.5 MIN
∗
10 MAX
Measurement point of
case temperature
24
3
1
1
2
3
4
CATHODE
ANODE
GATE
ANODE
TO-202
APPLICATION
Control of household equipment such as electric blandets, leakage protector, static switch, other
general purpose control applications, ignitors
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
8
12
Unit
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
720
V
VR (DC)
DC reverse voltage
320
480
V
VDRM
Repetitive peak off-state voltage
✽1
400
600
V
VD (DC)
DC off-state voltage
✽1
320
480
V
Ratings
Unit
3.15
A
2.0
A
20
A
1.6
A2s
Peak gate power dissipation
0.5
W
Average gate power dissipation
0.1
W
Peak gate forward voltage
6
V
VRGM
Peak gate reverse voltage
6
V
IFGM
Peak gate forward current
0.3
Tj
Junction temperature
Symbol
Conditions
Parameter
IT (RMS)
RMS on-state current
IT (AV)
Average on-state current
Commercial frequency, sine half wave, 180° conduction, Tc =75°C
ITSM
Surge on-state current
60Hz sine half wave 1 full cycle, peak value, non-repetitive
I2t
I2t
Value corresponding to 1 cycle of half wave 60Hz, Surge on-state
current
PGM
PG (AV)
VFGM
for fusing
Storage temperature
Tstg
—
Weight
Typical value
A
–40 ~ +125
°C
–40 ~ +125
°C
1.6
g
✽1. With Gate-to-cathode resistance RGK =1kΩ
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=125°C, V RRM applied
—
—
0.1
mA
IDRM
Repetitive peak off-state current
Tj=125°C, V DRM applied, RGK=1kΩ
—
—
0.1
mA
VTM
On-state voltage
Tc=25°C, ITM =4A, Instantaneous value
—
—
1.8
V
VGT
Gate trigger voltage
Tj=25°C, VD =6V, IT=0.1A
—
—
0.8
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
0.2
—
—
IGT
Gate trigger current
Tj=25°C, VD=6V, IT=0.1A
1
—
R th (j-c)
Thermal resistance
Junction to case ✽2
—
—
100 ✽3
10
V
µA
°C/W
✽2. The method point for case temperature is at the anode tab 1.5mm away from the molded case.
✽3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
MAXIMUM ON-STATE CHARACTERISTICS
101
7 Tc = 25°C
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
20
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
PERFORMANCE CURVES
18
16
14
12
10
8
6
4
2
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
102
GATE VOLTAGE (V)
7
5
3
2
VFGM = 6V
101
7
5
3
2
PGM = 0.5W
PG(AV) = 0.1W
VGT = 0.8V
100
7
5
3
2
IGT = 100µA
(Tj = 25°C)
10–1
7
5
3
2
VGD = 0.15V
IFGM = 0.3A
10–2
5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
100 (%)
GATE CHARACTERISTICS
103
7
5
3
2
TYPICAL EXAMPLE
102
7
5
3
2
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
DISTRIBUTION
TYPICAL EXAMPLE
0
–40 –20
0
20
40
60
80 100 120
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
3
2
JUNCTION TO AMBIENT
102
7
5
3
2
101
7
5
3
2
JUNCTION TO CASE
100
7
5
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
5.0
180°
4.5
90° 120°
60°
4.0
θ = 30°
3.5
3.0
2.5
2.0
1.5
θ
1.0
360°
0.5
0
0
RESISTIVE, INDUCTIVE LOADS
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
JUNCTION TEMPERATURE (°C)
140
θ
120
360°
RESISTIVE,
INDUCTIVE
LOADS
100
80
60
40
θ = 30°
20
0
60°
0
90°
120°
180°
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
WITHOUT FIN
140 NATURAL
θ
CONVECTION
360°
120
RESISTIVE,
100
INDUCTIVE
LOADS
80
θ = 30°
60°
60
90°
120°
40
180°
20
0
0
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
ALL FINS ARE
140 BLACK PAINTED
θ
IRON AND GREASED
80
60
40
20
θ = 30°
0
90°
180°
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
4.5
140
θ
120
360°
100
RESISTIVE
LOADS
θ = 30° 60° 90° 120°
4.0
180°
3.5
3.0
2.5
2.0
1.5
θ
1.0
360°
0.5
0
θ
0
CASE TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
5.0
RESISTIVE LOADS
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
θ
80
60
40
θ = 30° 60° 90° 120° 180°
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
WITHOUT FIN
140
θ θ
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
ALL FINS ARE
140 BLACK PAINTED
θ θ
IRON AND GREASED
50
50
t1.2
360°
120
RESISTIVE LOADS
100
NATURAL
CONVECTION
80
360°
RESISTIVE
θ = 30° LOADS
60° NATURAL
90°
CONVECTION
120°
180°
120
100
80
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
360°
50 50 t1.2
120
60
40
20
0
θ = 30°
0
90°
180°
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
TYPICAL EXAMPLE
RGK = 1kΩ
140
100 (%)
160
120
100
80
60
40
20
0
–40 –20
0
20
40
60
80 100 120
Tj = 125°C
RGK = 1kΩ
80
#2
60
40
#1
20
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
120
TYPICAL EXAMPLE
IGT (25°C)
100
# 1 19µA
# 2 66µA
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
101
7 DISTRIBUTION
5
TYPICAL EXAMPLE
3
IGT (25°C) = 35µA
2
100
7
5
3
2
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
10–1
7
5
3 VD = 12V
2 RGK = 1kΩ
10–2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
500
Tj = 25°C
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
# 1 25µA
0.9mA
# 2 48µA
1.3mA
400
300
200
#1
#2
100
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
100 (%)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C)
100 (%)
BREAKOVER VOLTAGE (dv/dt = vV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
100 (%)
TYPICAL EXAMPLE
Tj = 125°C
GATE TO CATHODE RESISTANCE (kΩ)
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT (RGK = rkΩ)
HOLDING CURRENT (RGK = 1kΩ)
120
100
BREAKOVER VOLTAGE (RGK = rkΩ)
BREAKOVER VOLTAGE (RGK = 1kΩ)
BREAKOVER VOLTAGE (T j = t°C)
BREAKOVER VOLTAGE (T j = 25°C)
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
120
100
80
60
40
20
0
–40 –20
0
20
40
60
80 100 120
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR2AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7 TYPICAL EXAMPLE
IGT (DC)
5
4 # 1 19µA
3 # 2 66µA
2
103
7
5
4
3
2
Tj = 25°C
#1
#2
102 0
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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