NSR0240P2T5G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. http://onsemi.com Features 40 V SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop − 460 mV @ 100 mA Low Reverse Current − 0.2 mA @ 25 V VR 200 mA of Continuous Forward Current Power Dissipation of 240 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 7 pF This is a Pb−Free Device 1 CATHODE Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 SOD−923 CASE 514AB PLASTIC 2 ORDERING INFORMATION MAXIMUM RATINGS Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 200 mA Non−Repetitive Peak Forward Surge Current IFSM 2.0 A ESD Rating: ESD Human Body Model Machine Model 1 MG G P = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS Rating MARKING DIAGRAM 2 Markets • • • • • 2 ANODE P • • • • • • • Device Package Shipping† NSR0240P2T5G SOD−923 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 1C Class A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 1 1 Publication Order Number: NSR0240P2/D NSR0240P2T5G THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Symbol Junction and Storage Temperature Range Min Typ Max Unit RqJA PD 520 240 °C/W mW RqJA PD 175 710 °C/W mW TJ, Tstg −55 to +150 °C Typ Max Unit 0.2 0.8 0.55 5.0 0.365 0.50 0.60 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Reverse Leakage (VR = 25 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF 0.34 0.46 0.54 Total Capacitance (VR = 1.0 V, f = 1 MHz) CT 7.0 Ir, REVERSE CURRENT (mA) 100 125°C 10 150°C 1 0.1 0.01 0.001 V pF 1000 85°C 0 25°C 0.1 −40°C 0.2 0.3 0.4 0.5 150°C 100 125°C 1 25°C 0.1 0.01 0.001 0.0001 −40°C 0.00001 0.6 85°C 10 0 5 10 15 20 25 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 mA 12 TA = 25°C 10 8 6 4 2 0 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 2 40 45 30 35 NSR0240P2T5G PACKAGE DIMENSIONS SOD−923 CASE 514AB−01 ISSUE B −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E 1 b 2 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.003 0.030 0.022 0.037 0.002 INCHES NOM 0.015 0.008 0.005 0.031 0.024 0.039 0.004 MAX 0.016 0.010 0.007 0.033 0.026 0.041 0.006 SOLDERING FOOTPRINT* 0.90 0.40 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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