ACE2390M N-Channel 150-V MOSFET Description ACE2390M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • • • Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters Absolute Maximum Ratings Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Parameter TA =25°C Continuous Drain Currenta Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA =25°C Power Dissipationa 0.9 IDM 5 IS 1.6 Operating Junction and Storage Temperature Range TJ, Tstg A A 1.3 PD TA =70°C V 1.1 ID TA =70°C Unit W 0.8 -55 to 150 °C THERMAL RESISTANCE RATINGS Symbol Maximum Unit Parameter Maximum Junction-to-Ambient a t<=10sec Steady State RθJA 100 166 °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE2390M N-Channel 150-V MOSFET Packaging Type Ordering information ACE2390M BM + H Halogen - free Pb - free BM : SOT-23-3 VER 1.1 2 ACE2390M N-Channel 150-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. VGS(th) VDS = VGS, ID = 250 uA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 VDS = 120 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0 V, TJ = 55°C 25 Unit Static Gate-Source Threshold Voltage ID(on) On-State Drain Current Drain-Source On-Resistance VDS = 5 V, VGS = 10 V rDS(on) V nA uA 5 A VGS = 10 V, ID = 1.1 A 0.7 VGS = 4.5 V, ID = 0.8 A 1.2 mΩ Forward Transconductance gfs VDS = 15 V, ID = 1.1 A 5 S Diode Forward Voltage VSD IS = 0.8 A, VGS = 0 V 0.75 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 4.4 Rise Time Turn-Off Delay Time 3.5 VDS = 75 V, VGS = 4.5 V, ID = 1.1 A 1.3 tr VDD = 75 V, RL = 75 Ω , ID = 1.1 A, 4.9 td(off) VGEN = 10 V, RGEN = 6 Ω 18.4 nS tf 4.9 Input Capacitance Ciss 356 Output Capacitance Coss ReverseTransfer Capacitance Crss Fall Time VDS = 15 V, VGS = 0 V, f =1 MHz nC 38 pF 17 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 3 ACE2390M N-Channel 150-V MOSFET Typical Performance Characteristics (N-Channel) ID-Drain Current (A) 1. On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 4 ACE2390M N-Channel 150-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VDS Drain to Source Voltage (V) 9. Safe Operating Area TJ –Junction Temperature(°C) 8. Normalized On-Resistance Vs Junction Temperature t1 TIME (SEC) 10. Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5 ACE2390M N-Channel 150-V MOSFET Packing Information STO-23-3 A MILLIMETERS MAX MIN NOM 1.10 0.935 0.95 A1 0.01 A2 0.85 0.90 0.925 b 0.40 0.50 C 0.30 0.10 D 2.70 E 2.60 E1 1.40 0.15 2.90 2.80 1.60 0.25 3.10 3.00 1.80 SYMBOLS 0.10 e 0.95 BSC e1 1.90 BSC L 0.30 0.40 L1 0.60REF L2 0.25BSC R 0.10 Θ 0° Θ1 4° 0.60 8° 7°NOM VER 1.1 6 ACE2390M N-Channel 150-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7