SemiHow HTS6A80AS Repetitive peak off-state voltage Datasheet

HTS6A80AS
VDRM = 800 V
IT(RMS) = 6 A
ITSM = 63 A
IGT = 35 mA
HTS6A80AS
6A TRIAC
Symbol
FEATURES
‰ Repetitive Peak Off-State Voltage : 800V
‰ R.M.S On–State Current (IT(RMS) = 6A)
‰ Gate Trigger Current : 35mA
‰ dV/dt • 1200V/us
72)
General Description
Especially designed to operate in high power density or universal
motor applications such as vacuum cleaner and washing machine
drum motor, these 6A triacs provide a very high switching capability
up to junction temperatures of 150୅.
The heat sink can be reduced, compared to traditional triacs,
according to the high performance at given junction temperatures.
Absolute Maximum Ratings
Symbol
G
(TJ=25୅ unless otherwise specified )
Parameter
VDRM
Repetitive Peak Off-State Voltage
VRRM
Repetitive Peak Reverse Voltage
VDSM
Non-Repetitive Surge Peak Off-State Voltage
VRSM
Non-Repetitive Peak Reverse Voltage
IT(RMS)
T1
T2
Conditions
Sine wave, 50/60Hz,
Gate open
95oC
Ratings
Unit
800
V
800
V
900
V
900
V
6
A
60/63
A
R.M.S. On-State Current
½ cycle, TC =
Non-Repetitive Surge Peak On-State Current
½ cycle, 50Hz/60Hz
Fusing Current
t = 10ms
32
A2 S
Forward Peak Gate Power
Dissipation
TJ = 150 πC
5
W
Forward Average Gate Power
Dissipation
TJ = 150 πC
0.5
W
IGM
Peak Gate Current
tp=20us, TJ = 150 πC
2
A
TJ
Operating Junction Temperature
-40~+150
oC
Storage Temperature
-40~+150
oC
ITSM
I2t
PGM
PG(AV)
TSTG
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(TJ=25୅ unless otherwise specified )
Symbol
Parameter
Conditions
IDRM
Repetitive Peak Off-State Current
VD = VDRM
IRRM
Repetitive Peak Reverse Current
VR = VRRM
IGT
Gate Trigger Current
VGT
VGD
Min
Typ
Max
Unit
TJ=25oC
-
-
10
uA
TJ=150oC
-
-
3
mA
TJ=25oC
-
-
10
uA
TJ
=150oC
-
-
3
mA
VD = 12V, RL=33Ÿ
1+, 1-, 3-
-
-
35
mA
Gate Trigger Voltage
VD = 12V, RL=33Ÿ
1+, 1-, 3-
-
-
1.3
V
Non-Trigger Gate Voltage
VD = 2/3VDRM, RL=3.3KŸ,
TJ=150oC
0.2
-
-
V
IL
Latching Current
IG= 1.2IGT
1+, 3-
-
-
50
mA
1-
-
-
80
mA
IH
Holding Current
IT= 500mA
-
-
40
mA
VTM
Peak On-State Voltage
IT = 8.5A, tp = 380uS
-
-
1.5
V
dv/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3 VDRM, Gate open,
TJ=150oC
1200
-
-
V/us
Min
Typ
Max
Unit
3.9
oC/W
Thermal Characteristics
Symbol
RșJC
Parameter
Thermal Resistance
Conditions
Junction to Case
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HTS6A80AS
Electrical Characteristics
HTS6A80AS
Typical Characteristics
Fig 1. R.M.S. current vs. Power dissipation
Fig 2. R.M.S. current vs. Case temperature
Fig 3. Surge on state characteristics
Fig 4. Surge on state current rating
Fig 5. Gate trigger current vs.
junction temperature
Fig 6. Holding and latching current vs.
junction temperature
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HTS6A80AS
Package Dimension
{vTYYWmG
±0.20
±0.20
2.54±0.20
6.68±0.20
0.70±0.20
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
0
0.2
0.80±0.20
0.50±0.20
2.54typ
2.54typ
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