Pb BC856A,B BC857A,B,C BC858A,B,C RoHS COMPLIANCE 0.2 Watts PNP Plastic-Encapsulate Transistors SOT-23 Features Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary PNP type available(BC846) Qualified to AEC-Q101 standards for high reliability Mechanical Data Case: SOT-23, Molded plastic Case material: molded plastic. UL flammability classification rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIIL-STD-202, Method 208 Lead free plating Marking & Polarity: See diagram Weight: 0.008 gram (approx.) Maximum Ratings Type Number Dimensions in inches and (millimeters) o TA=25 C unless otherwise specified Collector-base breakdown voltage IC=10uA, IE=0 Collector-emitter breakdown voltage IC=10mA, IB=0 Collector current o Power dissipation (Tamb=25 C) (Note 1) Emitter-base breakdown voltage Collector cut-off current IE=10uA, IC=0 VCB=-70V IE=0 VCB=-45V IE=0 VCB=-25V IE=0 Collector cut-off current VCE=-60V IB=0 VCE=-40V IB=0 VCE=-25V IB=0 Emitter cut-off current VEB=-5V IC=0 Collector-emitter saturation voltage IC=-100mA, IB=-5mA Base-emitter saturation voltage IC=-100mA, IB=-5mA Transition frequency VCE=-5V IC=-10mA f=100MHz Operating and Storage Temperature Range Type Number DC current gain BC846A,847A,848A BC846B,847B,848B VCE=-5V IC=-2mA BC847C / BC848C Symbol BC856 VCBO VCEO ICM PCM VEBO -80 -65 BC857 BC858 Units -50 -45 -0.1 0.2 -5 -30 -30 V V A W V -0.1 ICBO uA -0.1 -0.1 -0.1 ICEO uA -0.1 -0.1 IEBO VCE(sat) VBE(sat) fT TJ, TSTG Symbol HFE(1) -0.1 -0.5 -1.1 100 -55 to + 150 Min Max 125 220 420 250 475 800 DEVICE MARKING BC856A=3A, BC856B=3B, BC857A=3E, BC857B=3F, BC857C=3G,BC858A=3J, BC858B=3K, BC858C=3L Note 1: Transistor mounted on an FR4 Printed-circuit board. Version: B07 uA V V MHz o C Units RATINGS AND CHARACTERISTIC CURVES (BC856A,B/ BC857A,B,C/ BC858A,B,C) 500 FIG.1- DC CURRENT GAIN AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. -1200 FIG.2- BASE-EMITTER VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. VCE= -5V VCE= -5V 400 -1000 Ta mb = T amb= 150 O C -800 VBE (mV) hFE 300 Tam = 25 O b C 200 O -55 C O 25 T amb= -600 C O 0 C = 15 T amb -400 Tamb= -55 OC 100 -200 0 -0.01 -10000 -0.1 -1 IC (mA) -10 -100 -1000 FIG.3- COLLECTOR-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. 0-0.01 -1200 -1000 -0.1 -1 -100 FIG.4- BASE-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. -1000 T amb= -1000 -800 VBEsat (mV) O Tamb= 150 C VCEsat (mV) -10 IC / IB =20 IC / IB =20 O C = 25 T amb -100 O -55 C O 25 T amb= C O 0 C = 15 T amb -600 -400 O 5 C = -5 T amb -10 -0.1 1000 IC (mA) -10 IC (mA) -1 -200 -100 0 -0.1 -1000 FIG.5- DC CURRENT GAIN AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. -1200 -100 -1000 FIG.6- BASE-EMITTER VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. VCE= -5V VCE= -5V -1000 800 O -55 C T amb= -800 Ta hFE mb = 400 150 O C VBE (mV) 600 Tamb= 25 C T amb= -600 O 25 C O 0 C = 15 T amb O -400 Tamb= -55 C O 200 0 -0.01 -10 IC (mA) -1 -0.1 -1 IC (mA) -200 -10 -100 -1000 0 -0.01 -0.1 -1 IC (mA) -10 -100 Version: B07 -1000 RATINGS AND CHARACTERISTIC CURVES (BC856 A,B/ BC857A,B,C/ BC858A,B,C) -10000 FIG.7- COLLECTOR-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. -1200 FIG.8- BASE-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. IC / IB =20 IC / IB =20 -1000 O -55 C T amb= -1000 -800 O = 25 b T am VBEsat (mV) VCEsat (mV) O Tamb= 150 C C -100 -600 O 25 C O 0 C = 15 T amb -400 -200 O 5 C = -5 T amb -10 -0.1 1000 T amb= -10 IC (mA) -1 -100 FIG.9- DC CURRENT GAIN AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. Ta mb = 800 VCE= -5V 150 O C 0 -0.1 -1000 -1200 -10 IC (mA) -1 VCE= -5V -1000 -800 VBE (mV) hFE Tam = 25 O b C O O 0 C = 15 T amb -200 0 -0.01 -10000 C -600 -400 200 O -55 C 25 T amb= 400 Tamb= -55 OC -1000 FIG.10- BASE-EMITTER VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. T amb= 600 -100 -0.1 -1 IC (mA) -10 -100 0 -0.01 -1000 FIG.11- COLLECTOR-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. -1200 -0.1 -1 IC (mA) -10 -100 -1000 FIG.12- BASE-EMITTER SATURATION VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT; TYPICAL VALUES. IC / IB =20 IC / IB =20 -1000 O -55 C T amb= -1000 VBEsat (mV) VCEsat (mV) -800 O Tamb= 150 C C = 25 O -100 T amb -1 C O 0 C = 15 T amb -400 O 5 C = -5 T amb -10 -0.1 -600 O 25 T amb= -10 IC (mA) -100 -200 -1000 0 -0.1 -1 -10 IC (mA) -100 Version: B07 -1000