Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. · Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for BCD Solution · TO-92 Ammo packing TO-92 Figure 1. Package Types of APT17 Pin Configuration Z Package N Package (SOT-23) (TO-92 Ammo Package) (TO-92) Collector 3 1 Base 2 3 Base 3 Base 2 Collector 2 Collector 1 Emitter 1 Emitter Emitter Figure 2. Pin Configurations of APT17 (Top View) May. 2009 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Ordering Information APT17 G1: Green Circuit Type TR: Tape & Reel or Ammo Blank: Bulk Package N: SOT-23 Z: TO-92 Package SOT-23 TO-92 Part Number Marking ID APT17NTR-G1 Packing Type GD8 Tape & Reel APT17Z-G1 APT17Z-G1 Bulk APT17ZTR-G1 APT17Z-G1 Ammo BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Collector-Emitter Voltage (VBE=0) VCES 700 V Collector-Emitter Voltage (IB=0) VCEO 480 V Emitter-Base Voltage (IC=0) VEBO 10 V IC 50 mA ICM 100 mA IB 25 mA IBM 50 mA Collector Current Collector Peak Current (Pulse) Base Current Base Peak Current (Pulse) Power Dissipation, TA=25oC SOT-23 PTOT TO-92 Operating Junction Temperature 0.2 0.5 150 Storage Temperature Range -55 to 150 W o C oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. May. 2009 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Thermal Characteristics Parameter Symbol Value 625 SOT-23 Thermal Resistance (Junction-to-Ambient) Unit θJA TO-92 oC/W 250 Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Collector-Emitter Sustaining Voltage (IB=0) DC Current Gain Symbol Conditions ICEV VCE=700V VCEO (sus) IC=300µA hFE Min Max Unit 10 µA 480 IC=300µA, VCE=20V 20 IC=10mA, VCE=20V 20 May. 2009 1. 1 Typ V 25 40 50 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Typical Performance Characteristics 35 VCE=20V 0 TJ=125 C Instantanous Reverse Current(µA) 0 DC Current Gain hFE 100 VCE=20V 30 0 TJ=25 C 25 20 15 10 5 TJ=150 C 10 0 TJ=125 C 1 0.1 0.01 0 TJ=25 C 1E-3 0 1E-4 1E-3 0.01 0.1 0 TJ=75 C 20 40 60 80 100 120 Percent of Collector-Emitter Reverse voltage(%) Collector Current IC(A) Figure 3. DC Current Gain Figure 4. Typical Reverse Characteristics May. 2009 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions SOT-23 May. 2009 1. 1 Unit: mm(inch) BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions (Continuted) TO-92 Unit: mm(inch) 1.100(0.043) 3.430(0.135) MIN 0.360(0.014) 3.700(0.146) 3.300(0.130) 1.400(0.055) 0.510(0.020) 0.000(0.000) 0.380(0.015) Φ1.600(0.063) MAX 4.700(0.185) 0.380(0.015) 0.550(0.022) 14.100(0.555) 14.500(0.571) 4.300(0.169) 4.400(0.173) 4.700(0.185) 1.270(0.050) TYP 2.440(0.096) 2.640(0.104) May. 2009 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Mechanical Dimensions (Continuted) TO-92 Ammo Packing 12.400(0.488) 13.000(0.512) ±1.000(0.039) ΔP Unit: mm(inch) ±1.000(0.039) 4.400(0.173) 4.600(0.181) Δh 3.400(0.134) 3.600(0.142) 4.400(0.173) 4.600(0.181) 19.000(0.748) 21.000(0.827) 0.380(0.015) 0.550(0.022) 2.200(0.087) 2.800(0.110) 1.000 (0.039) MAX 5.500(0.217) 6.500(0.256) 2.500(0.098) MIN 3.800(0.150) 4.200(0.165) 17.500(0.689) 19.000(0.748) 6.050(0.238) 6.650(0.262) 8.500(0.335) 9.500(0.374) 2.200(0.087) 2.800(0.110) 15.500(0.610) 16.500(0.650) 3.550(0.140) 4.150(0.163) 12.500(0.492) 12.900(0.508) 0.150(0.006) 0.250(0.010) 0.350(0.014) 0.450(0.018) May. 2009 1. 1 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Soldering Information 2.90 2.50 Solder Lands 1.70 Solder Resist 2.70 1.30 Solder Paste Occupied Area 0.60 (3X) Dimensions in mm 0.50(3X) 0.60 (3X) 1.0 3.30 Figure 5. Reflow Soldering Footprint SOT-23 May. 2009 1. 1 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT17 Soldering Information(Continuted) Solder Lands Solder Resist Occupied Area 4.00 1.20 Dimensions in mm Preferred transport direction during soldering 2.80 4.50 Figure 6. Waving Soldering Footprint SOT-23 May. 2009 1. 1 BCD Semiconductor Manufacturing Limited 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. 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