FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K (32 K × 8) Bit MB85R256H ■ DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R256H is able to retain data without back-up battery. The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM. ■ FEATURES • • • • • • • Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package Copyright©2006 FUJITSU LIMITED All rights reserved MB85R256H ■ PIN ASSIGNMENTS (TOP VIEW) A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 (FPT-28P-M17) OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 (FPT-28P-M03) 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 (FPT-28P-M19) 2 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 MB85R256H ■ PIN DESCRIPTIONS Pin No. Pin name Function 10 to 1 A0 to A14 11 to 13, 15 to 19 I/O0 to I/O7 Data input/output 20 CE Chip enable input 27 WE Write Enable input 22 OE Output enable input 28 VCC Power supply ( + 3.3 V Typ) 14 GND Address Input Ground 3 MB85R256H ■ BLOCK DIAGRAM A14 to A10 Block decoder A14 to A0 Address latch A7 to A0 Row decoder FRAM array: 32,768 x 8 WE OE Pseudo-SRAM interface logic circuit CE A8, A9 Column decoder Control logic I/O latch bus driver I/O0-I/O7 I/O7 to I/O0 ■ FUNCTION LIST Operation mode Standby precharge CE WE OE H × × × L L Power supply current High-Z Standby (ISB) ⎯ ⎯ Latch address L Write L L H Data input Read L H L Data output Output Disable × H H High-Z H: High level, L: Low level, x: Irrespective of “H” or “L” 4 I/O7 to I/O0 Operation (ICC) MB85R256H ■ ABSOLUTE MAXIMUM RANGES Parameter Rating Symbol Min Max Unit Power supply voltage VCC − 0.5 + 4.0 V Input voltage VIN − 0.5 VCC + 0.5 V VOUT − 0.5 VCC + 0.5 V TA − 40 + 85 °C Tstg − 40 + 125 °C Output voltage Operating temperature Storage temperature WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Min Typ Max Unit Power supply voltage VCC 2.7 3.3 3.6 V High level input voltage VIH 0.8 × VCC ⎯ VCC + 0.5 V Low level input voltage VIL − 0.5 ⎯ + 0.6 V Operating temperature TA − 40 ⎯ + 85 °C WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 5 MB85R256H ■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics (within recommended operating conditions) Parameter Symbol Input leakage current | ILI | Output leakage current | ILO | Value Conditions Unit Min Typ Max VIN = 0 V to VCC ⎯ ⎯ 10 µA VOUT = 0 V to VCC, CE = VIH or OE = VIH ⎯ ⎯ 10 µA Operating power supply current ICC CE = 0.2 V, Other Inputs = VCC − 0.2 V/0.2 V, tRC (Min), Ii/o = 0 mA ⎯ 5 10 mA Standby current ISB CE, WE, OE ≥ VCC ⎯ 5 100 µA High level output voltage VOH IOH = − 100 µA 0.8 × VCC ⎯ ⎯ V Low level output voltage VOL IOL = 1.0 mA ⎯ ⎯ 0.4 V 2. AC Characteristics (1) Read cycle (within recommended operating conditions) Parameter 6 Symbol Value Min Max Read cycle time tRC 150 ⎯ CE active time tCA 70 2,000 Read pulse width tRP 70 2,000 Precharge time tPC 80 ⎯ Address setup time tAS 0 ⎯ Address hold time tAH 25 ⎯ CE access time tCE ⎯ 70 OE access time tOE ⎯ 70 CE output floating time tHZ ⎯ 25 OE output floating time tOHZ ⎯ 25 Unit ns MB85R256H (2) Write cycle (within recommended operating conditions) Parameter Value Symbol Min Max Write cycle time tWC 150 ⎯ CE active time tCA 70 2,000 Write pulse width tWP 70 2,000 Precharge time tPC 80 ⎯ Address setup time tAS 0 ⎯ Address hold time tAH 25 ⎯ Data setup time tDS 50 ⎯ Data hold time tDH 0 ⎯ Write set up time tWS 0 ⎯ Write hold time tWH 0 ⎯ Unit ns (3) Power ON/OFF sequence (within recommended operating conditions) Parameter Symbol Value Min Typ Max Unit CE LEVEL hold time at power OFF tpd 80 ⎯ ⎯ ns CE LEVEL hold time at power ON tpu 80 ⎯ ⎯ ns Power interval tpi 1 ⎯ ⎯ s 3. Pin Capacitance Parameter Symbol Input capacitance CIN output capacitance COUT Conditions VIN = VOUT = GND, f = 1 MHz, TA = + 25 °C Value Unit Min Typ Max ⎯ ⎯ 10 pF ⎯ ⎯ 10 pF 4. AC Characteristics Test Condition Power supply voltage : 2.7 V to 3.6 V Input voltage amplitude : 0.3 V to 2.7 V Input rising time : 10 ns Input falling time : 10 ns Input evaluation level : 2.0 V/0.8 V Output evaluation level : 2.0 V/0.8 V Output load : 100 pF 7 MB85R256H ■ TIMING DIAGRAM 1. Read cycle (CE Control) tRC tPC tPC tCA CE tAS A14 to A0 tAH tAS tAH Valid Valid tRC tPC OE tPC tRP tOE I/O7 to I/O0 High-Z Valid tOHZ High-Z Valid tHZ tCE WE “H” level : Don't care. 2. Read cycle (OE Control) tRC tPC tPC tCA CE tAS A14 to A0 tAH tAS tAH Valid Valid tRC tPC OE tRP tOE I/O7 to I/O0 High-Z Valid tOHZ tHZ “H” level : Don't care. 8 High-Z Valid tCE WE tPC MB85R256H 3. Write cycle (CE Control) tWC tPC tPC tCA CE tAS A14 to A0 tAS tAH Valid Valid tWC tPC tWH tAH tWS tPC tWH tWS tWP WE tDS tDS tDH Valid Valid Data In tDH OE “H” level : Don't care. 4. Write cycle (WE Control) tWC tPC tPC tCA CE tAS A14 to A0 tPC tAH Valid Valid tWH tWC tPC tWH tWS tWS tWP WE tDS Data In tAS tAH tDS tDH Valid Valid OE tDH “H” level : Don't care. 9 MB85R256H ■ POWER ON/OFF SEQUENCE tpd tpi tpu VCC VCC 3.0 V 3.0 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) 0.2 V GND VIL (Max) 0.2 V GND CE > VCC × 0.8* CE : Don't Care CE > VCC × 0.8* CE CE * : CE (Max) < VCC + 0.5 V ■ NOTES ON USE After IR reflow, the hold of data that was written before IR reflow is not guaranteed. ■ ORDERING INFORMATION Part number MB85R256HPF 10 Package Remarks 28-pin, plastic SOP (FPT-28P-M17) MB85R256HPFTN 28-pin, plastic TSOP(1) (FPT-28P-M03) MB85R256HPFCN 28-pin, plastic TSOP(1) (FPT-28P-M19) Cu Lead Frame MB85R256H ■ PACKAGE DIMENSIONS 28-pin plastic SOP Lead pitch 1.27 mm Package width × package length 8.6 × 17.75 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 2.80 mm MAX Weight 0.82 g Code (Reference) P-SOP28-8.6×17.75-1.27 (FPT-28P-M17) 28-pin plastic SOP (FPT-28P-M17) Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. +0.25 +.010 +0.03 *1 17.75 –0.20 .699 –.008 0.17 –0.04 +.001 .007 –.002 28 15 11.80±0.30 (.465±.012) *2 8.60±0.20 INDEX (.339±.008) Details of "A" part 2.65±0.15 (Mounting height) (.104±.006) 0.25(.010) 1 1.27(.050) 14 0.47±0.08 (.019±.003) 0.13(.005) "A" 0~8˚ M 0.80±0.20 (.031±.008) 0.88±0.15 (.035±.006) 0.20±0.15 (.008±.006) (Stand off) 0.10(.004) C 2002 FUJITSU LIMITED F28048S-c-3-4 Dimensions in mm (inches). Note: The values in parentheses are reference values. (Continued) 11 MB85R256H 28-pin plastic TSOP (I) Lead pitch 0.55 mm Lead shape Gullwing Sealing method Plastic mold Lead bend direction Normal bend (FPT-28P-M03) 28-pin plastic TSOP (I) (FPT-28P-M03) 22 21 Details of "A" part 0.15(.006) MAX INDEX 28 LEAD No. "A" 1 0.35(.014) MAX 0.15(.006) 7 0.25(.010) 8 13.40±0.20 (.528±.008) 8.00±0.20 (.315±.008) 11.80±0.20 (.465±.008) 7.15(.281)REF +0.10 1.10 –0.05 +.004 .043 –.002 (Mounting height) 0.15±0.05 (.006±.002) 0.10(.004) 12.40±0.20 (.488±.008) C 1997 FUJITSU LIMITED F28018S-5C-3 0(0)MIN (STAND OFF) 0.55(.0217) TYP 0.50±0.10 (.020±.004) 0.20±0.10 (.008±.004) 0.09(.004) M Dimensions in mm (inches). Note: The values in parentheses are reference values. (Continued) 12 MB85R256H (Continued) 28-pin plastic TSOP (1) Lead pitch 0.55 mm Package width × package length 11.80 × 8.00 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.20 mm Max Weight Approx. 0.25 g Code (Reference) P-TSOP(1)28-11.8×8-0.55 (FPT-28P-M19) 28-pin plastic TSOP (1) (FPT-28P-M19) 22 28 LEAD No. 21 INDEX 1 7 8 0.15±0.05 (.006±.002) 13.40±0.20 (.528±.008) 11.80±0.20 (.465±.008) 8.00±0.20 (.315±.008) 0.55(.0217) TYP 0.10(.004) 12.40±0.20 (.488±.008) C 2005 FUJITSU LIMITED F28062S-c-3-3 0.50±0.10 (.020±.004) 7.15(.281) REF 0.20±0.10 (.008±.004) 0.00(.000) Min (Stand off) +0.10 +.004 1.10 –0.05 .043 –.002 (Mounting height) 0.09(.004) M Dimensions in mm (inches). Note: The values in parentheses are reference values. 13 MB85R256H FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. 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