CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB5D0P03J3 BVDSS ID @VGS=-10V RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -88A 3.7mΩ(typ) 5.1mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & halogen-free package Equivalent Circuit Outline MTB5D0P03J3 TO-252(DPAK) G G：Gate D：Drain S：Source D S Ordering Information Device MTB5D0P03J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB5D0P03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=175°C, TC=25°C, VGS=-10V (Note 1) Symbol Limits Unit VDS VGS -30 ±20 V ID Continuous Drain Current @ TJ=175°C, TC=100°C, VGS=-10V (Note 1) Continuous Drain Current @TA=25°C, VGS=-10V Continuous Drain Current @TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.5mH, ID=-26A, RG=25Ω TC=25°C TC=100°C Total Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range (Note 2) IDSM (Note 2) IDM IAS EAS (Note 3) (Note 3) (Note 2) (Note 1) PD (Note 1) (Note 2) PDSM (Note 2) Tj, Tstg -88 -62 -15 -12 -352 -26 169 94 47 2.5 1.6 -55~+175 A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient, t≤10s (Note 2) Thermal Resistance, Junction-to-ambient, steady state (Note 2) Symbol RθJC RθJA Typical 1.4 15 40 Maximum 1.6 18 50 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. The maximum current limited by package is 56 A. 5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum. 6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient. MTB5D0P03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 3/9 Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 Min. Typ. Max. -30 -1 - 3.7 5.1 60 -2.5 ±100 -1 -25 5.5 8.5 - GFS *1 Dynamic Qg *1, 2 121 181 Qgs *1, 2 18.6 Qgd *1, 2 24.5 td(ON) *1, 2 19.4 29 tr 21.6 32 *1, 2 td(OFF) *1, 2 133 200 tf *1, 2 49.2 74 Ciss 7267 Coss 739 Crss 677 Rg 3.8 Source-Drain Diode Ratings and Characteristics IS *1 -88 ISM *1 -352 VSD *1 -0.81 -1.2 trr 26 40 Qrr 17 - Unit Test Conditions S VGS=0V, ID=-250μA VDS =VGS, ID=-250μA VGS=±20V, VDS=0V VDS =-30V, VGS =0V VDS =-30V, VGS =0V, TJ=125°C VGS =-10V, ID=-25A VGS =-4.5V, ID=-10A VDS =-5V, ID=-25A nC ID=-25A, VDS=-24V, VGS=-10V ns VDS=-15V, ID=-25A, VGS=-10V, RG=2.7Ω pF VGS=0V, VDS=-25V, f=1MHz Ω VDS=0V, f=1MHz V nA μA mΩ A V ns nC IS=-25A, VGS=0V IF=-25A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTB5D0P03J3 CYStek Product Specification Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 200 -BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V,4.5V,4V -I D, Drain Current(A) 160 -VGS=3.5V 120 -VGS=3V 80 -VGS=2.5V 40 1.2 1 0.8 0.6 ID=-250μA, VGS=0V -VGS=2V 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 In descending order VGS=-2.5V -3V -4.5V -10V 90 80 70 60 -VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 100 50 40 30 20 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 10 0.2 0 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 5 10 15 20 25 30 -IDR , Reverse Drain Current(A) 35 40 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 3 90 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=-25A 80 70 60 50 40 30 20 10 2.5 VGS=-10V, ID=-25A 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 3.7mΩ typ 0 0 0 MTB5D0P03J3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics (Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th), Normalized Threshold Voltage 100000 Capacitance---(pF) Ciss 10000 C oss 1000 Crss f=1MHz 1.4 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 100 0 -75 -50 -25 30 10 20 -VDS, Drain-Source Voltage(V) 75 100 125 150 175 200 Gate Charge Characteristics 10 100μ s RDS(ON) Limited 100 1ms 10ms 100ms 1s 10 DC TC=25°C, Tj=175°C, VGS=-10V, RθJC=1.6°C/W, single pulse 1 -VGS, Gate-Source Voltage(V) 1000 -I D, Drain Current (A) 25 50 Tj, Junction Temperature(°C) Maximum Safe Operating Area 8 6 4 VDS=-24V ID=-25A 2 0 0.1 0.1 1 10 -VDS, Drain-Source Voltage(V) 0 100 20 40 60 80 100 Qg, Total Gate Charge(nC) 120 140 Forward Transfer Admittance vs Drain Current Maximum Drain Current vs Case Temperature 100 GFS , Forward Transfer Admittance(S) 100 -I D, Maximum Drain Current(A) 0 90 80 70 60 50 40 30 20 VGS=-10V, Tj(max)=175°C, RθJC=1.6°C/W, single pulse 10 0 25 MTB5D0P03J3 50 75 100 125 150 TC , Case Temperature(°C) 175 200 10 1 VDS=-5V Pulsed Ta=25°C 0.1 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 6/9 Typical Characteristics (Cont.) Power Derating Curve Typical Transfer Characteristics 100 80 VDS=-10V PD, Power Dissipation(W) 70 -ID, Drain Current(A) 60 50 40 30 20 80 60 40 20 10 0 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 0 25 50 75 100 125 150 TC, Case Temperature(℃) 175 200 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=1.6°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB5D0P03J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB5D0P03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB5D0P03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C965J3 Issued Date : 2014.09.15 Revised Date : Page No. : 9/9 TO-252 Dimension Marking: 4 Device Name B5D0 P03 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB5D0P03J3 CYStek Product Specification