MSN0620Z 60V(D-S) N-Channel Enhancement Mode Power MOS FET Genera Features ● VDS =60V,ID =20A RDS(ON) <44mΩ @ VGS=10V ● High density cell design for ultra low Rdson Lead Free ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment Schematic diagram TO-251 top view Package Marking and Ordering Information Device Marking MSN0620Z Device Device Package Reel Size Tape width Quantity MSN0620Z TO-251 - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 20 A ID (100℃) 14 A Pulsed Drain Current IDM 45 A Maximum Power Dissipation PD 30 W 0.2 W/℃ EAS 72 mJ TJ,TSTG -55 To 175 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSN0620Z Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC ℃/W 5 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 2.0 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A - 37 44 mΩ gFS VDS=5V,ID=4.5A 11 - - S - 500 - PF - 60 - PF Crss - 25 - PF Turn-on Delay Time td(on) - 5 - nS Turn-on Rise Time tr VDD=30V,ID=2A,RL=6.7Ω - 2.6 - nS td(off) VGS=10V,RG=3Ω - 16.1 - nS - 2.3 - nS - 14 nC - 2.9 nC - 5.2 nC Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=30V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=4.5A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=20A trr Reverse Recovery Time Reverse Recovery Charge Qrr Forward Turn-On Time ton - 1.2 V - - 20 A TJ = 25°C, IF =20A - 35 - nS (Note3) - 53 - nC di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN0620Z Test Circuit 1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSN0620Z ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward http://www.moresemi.com 4/6 C Capacitance (pF) MSN0620Z TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSN0620Z TO-251 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 1.050 1.350 0.042 0.054 B 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 D 6.350 6.650 0.250 0.262 D1 5.200 5.400 0.205 0.213 E 5.400 5.700 0.213 0.224 e 2.300 TYP 0.091 TYP e1 4.500 4.700 0.177 0.185 L 7.500 7.900 0.295 0.311 MORE Semiconductor Company Limited http://www.moresemi.com 6/6