ON MUN5215T1G Bias resistor transistor Datasheet

MUN5211T1G Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base--emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC--70/SOT--323 package which is designed for low power
surface mount applications.
Features




Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC--70/SOT--323 package can be soldered using wave or reflow.
The modified gull--winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
 Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel.
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol
Value
Unit
Collector--Base Voltage
VCBO
50
Vdc
Collector--Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
Rating
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25C
Derate above 25C
mW/C
Thermal Resistance, Junction--to--Ambient
RθJA
618 (Note 1)
403 (Note 2)
C/W
Thermal Resistance, Junction--to--Lead
RθJL
280 (Note 1)
332 (Note 2)
C/W
TJ, Tstg
-- 55 to +150
C
Junction and Storage Temperature
Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad.
2. FR--4 @ 1.0 x 1.0 inch Pad.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 9
1
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NPN SILICON
BIAS RESISTOR
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
3
1
2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
SC--70/SOT--323
CASE 419
STYLE 3
MARKING DIAGRAM
8x M G
G
8x = Device Code
M = Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Publication Order Number:
MUN5211T1/D
MUN5211T1G Series
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping†
MUN5211T1G
SC--70/SOT--323
(Pb--Free)
8A
10
10
3000 / Tape & Reel
MUN5212T1G
SC--70/SOT--323
(Pb--Free)
8B
22
22
3000 / Tape & Reel
MUN5213T1G
SC--70/SOT--323
(Pb--Free)
8C
47
47
3000 / Tape & Reel
MUN5214T1G
SC--70/SOT--323
(Pb--Free)
8D
10
47
3000 / Tape & Reel
MUN5215T1G
SC--70/SOT--323
(Pb--Free)
8E
10

3000 / Tape & Reel
MUN5216T1G (Note 3)
SC--70/SOT--323
(Pb--Free)
8F
4.7

3000 / Tape & Reel
MUN5230T1G
SC--70/SOT--323
(Pb--Free)
8G
1.0
1.0
3000 / Tape & Reel
MUN5231T1G (Note 3)
SC--70/SOT--323
(Pb--Free)
8H
2.2
2.2
3000 / Tape & Reel
MUN5232T1G
SC--70/SOT--323
(Pb--Free)
8J
4.7
4.7
3000 / Tape & Reel
MUN5233T1G
SC--70/SOT--323
(Pb--Free)
8K
4.7
47
3000 / Tape & Reel
MUN5234T1G (Note 3)
SC--70/SOT--323
(Pb--Free)
8L
22
47
3000 / Tape & Reel
MUN5235T1G
SC--70/SOT--323
(Pb--Free)
8M
2.2
47
3000 / Tape & Reel
MUN5236T1G (Note 3)
SC--70/SOT--323
(Pb--Free)
8N
100
100
3000 / Tape & Reel
MUN5237T1G (Note 3)
SC--70/SOT--323
(Pb--Free)
8P
47
22
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
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2
MUN5211T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector--Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
--
--
100
nAdc
Collector--Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
--
--
500
nAdc
IEBO
---------------
---------------
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector--Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
--
--
Vdc
Collector--Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
--
--
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
---------------
---------------
---------------
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Characteristic
OFF CHARACTERISTICS
Emitter--Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5211T1G
MUN5212T1G
MUN5213T1G
MUN5214T1G
MUN5215T1G
MUN5216T1G
MUN5230T1G
MUN5231T1G
MUN5232T1G
MUN5233T1G
MUN5234T1G
MUN5235T1G
MUN5236T1G
MUN5237T1G
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector--Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
MUN5211T1G
MUN5212T1G
MUN5213T1G
MUN5214T1G
MUN5215T1G
MUN5216T1G
MUN5230T1G
MUN5231T1G
MUN5232T1G
MUN5233T1G
MUN5234T1G
MUN5235T1G
MUN5236T1G
MUN5237T1G
VCE(sat)
MUN5211T1G
MUN5212T1G
MUN5213T1G
MUN5214T1G
MUN5236T1G
MUN5230T1G
MUN5231T1G
MUN5237T1G
MUN5215T1G
MUN5216T1G
MUN5232T1G
MUN5233T1G
MUN5234T1G
MUN5235T1G
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
Vdc
MUN5211T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Symbol
Characteristic
Min
Typ
Max
---------------
---------------
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
---------------
---------------
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
0.8
0.8
0.8
0.17
--0.8
0.8
0.8
0.055
0.38
0.038
0.8
1.7
1.0
1.0
1.0
0.21
--1.0
1.0
1.0
0.1
0.47
0.047
1.0
2.1
1.2
1.2
1.2
0.25
--1.2
1.2
1.2
0.185
0.56
0.056
1.2
2.6
Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
Input Resistor
Resistor Ratio
VOL
MUN5211T1G
MUN5212T1G
MUN5214T1G
MUN5215T1G
MUN5216T1G
MUN5230T1G
MUN5231T1G
MUN5232T1G
MUN5233T1G
MUN5234T1G
MUN5235T1G
MUN5213T1G
MUN5236T1G
MUN5237T1G
VOH
MUN5211T1G
MUN5212T1G
MUN5213T1G
MUN5214T1G
MUN5234T1G
MUN5235T1G
MUN5230T1G
MUN5215T1G
MUN5216T1G
MUN5231T1G
MUN5232T1G
MUN5233T1G
MUN5236T1G
MUN5237T1G
R1
MUN5211T1G
MUN5212T1G
MUN5213T1G
MUN5214T1G
MUN5215T1G
MUN5216T1G
MUN5230T1G
MUN5231T1G
MUN5232T1G
MUN5233T1G
MUN5234T1G
MUN5235T1G
MUN5236T1G
MUN5237T1G
R1/R2
MUN5211T1G
MUN5212T1G
MUN5213T1G
MUN5214T1G
MUN5215T1G
MUN5216T1G
MUN5230T1G
MUN5231T1G
MUN5232T1G
MUN5233T1G
MUN5234T1G
MUN5235T1G
MUN5236T1G
MUN5237T1G
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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Vdc
Vdc
kΩ
MUN5211T1G Series
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
-- 50
RθJA = 403C/W
0
50
100
TA, AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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5
150
MUN5211T1G Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5211T1G
TA = --25C
25C
0.1
75C
0
20
40
IC, COLLECTOR CURRENT (mA)
TA = 75C
25C
--25C
100
0.01
0.001
VCE = 10 V
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
2
1
0
25C
75C
f = 1 MHz
IE = 0 V
TA = 25C
TA = --25C
10
1
0.1
0.01
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA = --25C
25C
75C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
3
100
40
20
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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6
50
10
MUN5211T1G Series
1000
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5212T1G
IC/IB = 10
25C
TA = --25C
0.1
75C
0.01
0.001
0
20
--25C
100
10
1
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
100
3
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25C
2
1
75C
25C
TA = --25C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
2
0
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = --25C
10
25C
75C
1
0.1
0
10
8
10
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
TA = 75C
25C
10
50
40
VCE = 10 V
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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MUN5211T1G Series
10
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5213T1G
1
25C
TA = --25C
75C
0.1
0.01
0
TA = 75C
25C
--25C
100
10
50
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
1
Figure 12. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
0.2
0
0
25C
75C
0.6
TA = --25C
10
1
0.1
0.01
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
100
VO = 0.2 V
TA = --25C
10
25C
75C
1
0.1
0
10
8
10
Figure 15. Output Current versus Input Voltage
Figure 14. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
Figure 13. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25C
0.8
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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MUN5211T1G Series
1
300
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5214T1G
TA = --25C
25C
0.1
75C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25C
200
--25C
150
100
50
0
80
TA = 75C
VCE = 10
250
2
1
4
6
Figure 17. VCE(sat) versus IC
100
f = 1 MHz
lE = 0 V
TA = 25C
3
TA = 75C
IC, COLLECTOR CURRENT (mA)
3.5
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25C
--25C
10
VO = 5 V
1
50
Figure 19. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = --25C
25C
75C
1
0.1
0
10
8
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 18. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
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9
10
MUN5211T1G Series
1
1000
IC/IB = 10
75C
0.1
--25C
25C
0.01
0.001
0
20
40
30
10
IC, COLLECTOR CURRENT (mA)
25C
10
1
50
TA = --25C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
IE = 0 V
TA = 25C
3.5
3
2.5
2
1.5
1
0.5
75C
10
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 24. Output Capacitance
25C
1
TA = --25C
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = --25C
1
25C
75C
VO = 0.2 V
0.1
0
9
10
Figure 25. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 23. DC Current Gain
4.5
0
VCE = 10 V
75C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215T1G
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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10
50
MUN5211T1G Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230T1G
75C
0.1
--25C
25C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
25C
TA = --25C
VCE = 10 V
1
50
75C
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
4.5
f = 1 MHz
IE = 0 V
TA = 25C
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75C
10
25C
1
TA = --25C
0.1
0.01
0.001
50
Figure 29. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = --25C
75C
1
25C
VO = 0.2 V
0.1
0
9
10
Figure 30. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
4
100
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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11
50
MUN5211T1G Series
1000
1
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232T1G
75C
0.1
--25C
25C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
TA = --25C
10
1
50
75C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25C
5
4
3
2
1
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75C
10
25C
1
TA = --25C
0.1
0.01
0.001
50
Figure 34. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = --25C
1
75C
25C
VO = 0.2 V
0.1
0
9
10
Figure 35. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 33. DC Current Gain
6
0
25C
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
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12
50
MUN5211T1G Series
1000
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233T1G
75C
--25C
25C
0.01
0.001
0
5
10
15
25
20
IC, COLLECTOR CURRENT (mA)
75C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25C
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75C
10
25C
1
TA = --25C
0.1
0.01
0.001
50
Figure 39. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = --25C
1
75C
25C
VO = 0.2 V
0.1
0
9
10
Figure 40. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3
100
Figure 38. DC Current Gain
4
3.5
25C
10
1
30
TA = --25C
100
20
5
10
15
IC, COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
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13
25
MUN5211T1G Series
1000
1
VCE = 10 V
IC/IB = 10
75C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235T1G
75C
0.1
--25C
25C
0.01
0.001
0
10
20
40
30
IC, COLLECTOR CURRENT (mA)
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
f = 1 MHz
IE = 0 V
TA = 25C
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
75C
1
TA = --25C
0.1
0.01
0.001
50
25C
VO = 5 V
0
Figure 44. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
75C
1
25C
TA = --25C
VO = 0.2 V
0.1
0
9
10
Figure 45. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3.5
100
Figure 43. DC Current Gain
4.5
4
25C
10
1
50
TA = --25C
40
10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
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14
50
MUN5211T1G Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 47. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 48. Open Collector Inverter:
Inverts the Input Signal
Figure 49. Inexpensive, Unregulated Current Source
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15
MUN5211T1G Series
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
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MUN5211T1/D
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