BAV199L, SBAV199L Dual Series Switching Diode Features • Low Leakage Current Applications • Medium Speed Switching Times • S Prefix for Automotive and Other Applications Requiring Unique • www.onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant CASE 318 SOT−23 STYLE 11 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 Vdc Average Rectified Forward Current (Note 1) (Averaged Over Any 20 ms Period) IF(AV) 715 mAdc Repetitive Peak Forward Current IFRM 450 mAdc Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s IFSM Peak Forward Surge Current Characteristic Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Max Unit JY = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −65 to +150 °C RqJA October, 2016 − Rev. 10 *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 MARKING DIAGRAM JY M G G 2.0 1.0 0.5 Symbol 3 CATHODE/ANODE Adc THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25°C CATHODE 2 ANODE 1 1 Package Shipping† BAV199LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAV199LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAV199LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV199LT1/D BAV199L, SBAV199L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max 70 − − − 5.0 80 − 2.0 − − − − 900 1000 1100 1250 − 3.0 Unit OFF CHARACTERISTICS V(BR) Reverse Breakdown Voltage (I(BR) = 100 mAdc) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr Vdc nAdc pF mVdc ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAV199L, SBAV199L TYPICAL CHARACTERISTICS 100 IR, REVERSE CURRENT (nA) 100 150°C 25°C −55°C 10 1 0.1 TA = 150°C 10 1.0 25°C 0.1 −55°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 4. Leakage Current 1.2 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1,000 TA = 25°C 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 3. Capacitance www.onsemi.com 3 70 80 70 80 BAV199L, SBAV199L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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