INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.7mΩ ·Enhancement mode: Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 130 A IDM Drain Current-Single Pulsed 520 A PD Total Dissipation @TC=25℃ 520 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.29 ℃/W 40 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4668，IIRFP4668 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 200 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 3.0 RDS(on) Drain-Source On-Resistance VGS=10V; ID=81A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V 5.0 V 9.7 mΩ ±0.1 μA VDS=100V; VGS= 0V 20 μA IS=81A, VGS = 0V 1.3 V 2 isc & iscsemi is registered trademark