POSEICO ARF2012S26 Fast recovery diode Datasheet

ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
FAST RECOVERY DIODE
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ARF2012
Repetitive voltage up to
Mean forward current
Surge current
2600 V
1525 A
16 kA
FINAL SPECIFICATION
apr 97 - ISSUE : 04
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V RRM
Repetitive peak reverse voltage
150
2600
V
V RSM
Non-repetitive peak reverse voltage
150
2700
V
I
Repetitive peak reverse current
150
50
RRM
V=VRRM
mA
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
1525
A
I
F (AV)
Mean forward current
180° square,50 Hz,Th=55°C,double side cooled
1545
A
I
FSM
Surge forward current
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
16
kA
150
I² t
I² t
V FM
Forward voltage
V F(TO)
Threshold voltage
150
1.03
V
r
Forward slope resistance
150
0.362
mohm
F
1280 x1E3
Forward current =3400 A
25
2.5
A²s
V
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I F = 1000 A
di/dt=
100 A/µs
VR =
100 V
150
4.6
µs
800
µC
A
I rr
Peak reverse recovery current
345
s
Softness (s-factor), min
0.4
V FR
Peak forward recovery
di/dt=
400 A/µs
150
13
V
26
°C/kW
MOUNTING
R th(j-h)
Thermal impedance
T
Operating junction temperature
-30 / 150
°C
Mounting force
18.0 / 20.0
kN
F
j
Junction to heatsink, double side cooled
Mass
500
ORDERING INFORMATION : ARF2012 S 26
standard specification
VRRM/100
g
ANSALDO
ARF2012 FAST RECOVERY DIODE
FINAL SPECIFICATION
apr 97 - ISSUE : 04
DISSIPATION CHARACTERISTICS
SQUARE WAVE
4000
DC
3500
DC
180°
Power Dissipation [W]
3000
90°
120°
60°
2500
30°
2000
1500
1000
500
0
0
500
1000
1500
2000
2500
2000
2500
Mean Forward Current [A]
SINE WAVE
4000
Power Dissipation [W]
3500
180°
DC
3000
90°
2500
120°
60°
30°
2000
1500
1000
500
0
0
500
1000
1500
Mean Forward Current [A]
ANSALDO
ARF2012 FAST RECOVERY DIODE
FINAL SPECIFICATION
apr 97 - ISSUE : 04
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
25
20
Tj = 150 °C
VFR [V]
15
IF
VFR
10
Tj = 25 °C
VF
5
0
0
200
400
600
800
1000
1200
di/dt [A/µs]
REVERSE RECOVERY CHARGE
Tj = 150 °C
REVERSE RECOVERY CURRENT
Tj = 150 °C
1800
1000 A
1600
1400
500 A
1000
Irr [A]
Qrr [µC]
1200
250 A
800
600
400
200
0
0
100
200
300
400
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
1000 A
500 A
250 A
0
100
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
300
400
di/dt
IF
ta
Softness (s factor) s = tb / ta
Irr
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
200
di/dt [A/µs]
tb
Vr
ANSALDO
ARF2012 FAST RECOVERY DIODE
FINAL SPECIFICATION
apr 97 - ISSUE : 04
FORWARD CHARACTERISTIC
Tj = 150 °C
SURGE CHARACTERISTIC
Tj = 150 °C
5000
16
4500
14
4000
10
3000
ITSM [kA]
Forward Current [A]
12
3500
2500
2000
8
6
1500
4
1000
2
500
0
0
0.6
1.1
1.6
2.1
2.6
1
Forward Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
30.0
25.0
Zth j-h [°C/kW]
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with
clamping force, cleaned and lubricated heatsink, surfaces with flatness <
and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over
background) and characteristics is reported.
uniform
.03 mm
change
shaded
100
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