NID5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N−Channel, DPAK HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features • • • • • • Short Circuit Protection/Current Limit Thermal Shutdown with Automatic Restart IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection http://onsemi.com VDSS (Clamped) RDS(on) TYP ID MAX (Limited) 42 V 42 m @ 10 V 20 A* Drain Gate Input RG Overvoltage Protection MPWR ESD Protection Temperature Limit Current Limit Current Sense Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc Gate−to−Source Voltage VGS "14 Vdc Drain Current Continuous Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 2.6 Apk, L = 120 mH, RG = 25 ) Operating and Storage Temperature Range (Note 3) ID PD Internally Limited W 1.3 2.3 RJC RJA RJA 3.0 95 54 EAS 400 °C/W mJ MARKING DIAGRAM D5003N Y WW G −55 to 150 °C 3 YWW D 5003NG 1 = Gate 2 = Drain 3 = Source ORDERING INFORMATION NID5003NT4 NID5003NT4G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu. 2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu. 3. Normal pre−fault operating range. See thermal limit range conditions. 2 = Device Code = Year = Work Week = Pb−Free Device Device TJ, Tstg 1 DPAK CASE 369C STYLE 2 Package Shipping† DPAK 2500/Tape & Reel DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. *Max current may be limited below this value depending on input conditions. © Semiconductor Components Industries, LLC, 2008 September, 2008− Rev. 6 1 Publication Order Number: NID5003N/D NID5003N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 42 40 46 45 51 51 Vdc − − 0.6 2.5 5.0 − − 50 125 Adc 1.0 − 1.7 5.0 2.2 − Vdc −mV/°C − − 42 76 51 104 − − 50 88 58 125 VSD − 0.95 1.1 V s OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) (VGS = 0 Vdc, ID = 250 Adc, TJ = −40°C to 150°C) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) IGSSF Adc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient VGS(th) Static Drain−to−Source On−Resistance (Note 4) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) RDS(on) Static Drain−to−Source On−Resistance (Note 4) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) RDS(on) Source−Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) m m SWITCHING CHARACTERISTICS Turn−on Time (Vin to 90% ID) RL = 4.7 Vin = 0 to 10 V, VDD = 12 V T(on) − 16 20 Turn−off Time (Vin to 10% ID) RL = 4.7 Vin = 0 to 10 V, VDD = 12 V T(off) − 80 100 Slew Rate On RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V −dVDS/dton − 1.4 − Vs Slew Rate Off RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V dVDS/dtoff − 0.5 − Vs Adc SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Current Limit (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C) ILIM 12 7 18 13 24 18 Current Limit (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150°C) ILIM 18 13 22 18 30 25 Temperature Limit (Turn−off) VGS = 5.0 Vdc TLIM(off) 150 175 200 °C Thermal Hysteresis VGS = 5.0 Vdc TLIM(on) − 15 − °C Temperature Limit (Turn−off) VGS = 10 Vdc TLIM(off) 150 165 185 °C Thermal Hysteresis VGS = 10 Vdc TLIM(on) − 15 − °C 4000 400 − − − − ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. http://onsemi.com 2 V NID5003N TYPICAL PERFORMANCE CURVES VGS = 7 V 25 VGS = 10 V VGS = 6 V VGS = 8 V 20 15 VGS = 5 V 10 VGS = 4 V 5 VGS = 3 V TJ = 25°C 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID, DRAIN CURRENT (AMPS) 30 25 Current Limit Inception Region VGS = 9 V 0.5 1 1.5 2 3 2.5 3.5 4 4.5 15 25°C 10 100°C 5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 5 A TJ = 25°C 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 3 5 7 8 9 4 6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10 1 0.06 VGS = 5 V 0.05 0.045 VGS = 10 V 0.04 0.035 0.03 2 3 4 6 5 7 8 9 10 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 ID = 5 A VGS = 10 V VGS = 0 V 1.4 TJ = 150°C 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 4 TJ = 25°C 0.055 Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.8 TJ = −55°C 20 1.5 3.5 3 2 2.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1.0 2 VDS ≥ 10 V 0 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE () ID, DRAIN CURRENT (AMPS) 35 1.2 1.0 0.8 0.6 0.4 1000 TJ = 100°C 100 0.2 0 −50 −30 −10 10 30 50 70 90 110 130 150 10 0 5 10 15 20 25 30 35 40 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 45 NID5003N TYPICAL PERFORMANCE CURVES IS, SOURCE CURRENT (AMPS) 10 VGS = 0 V TJ = 25°C 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NID5003N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT 6.20 0.244 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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