100mA / 50V Digital transistors (with built-in resistors) DTC115EM / DTC115EE / DTC115EUA / DTC115EKA zInner circuit zApplications Inverter, Interface, Driver R1 IN zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on/off conditions need to be set for operation, making the device design easy. 4) Higher mounting densities can be achieved. OUT R2 GND IN OUT GND R1=R2=100kΩ zStructure NPN epitaxial planar silicon transistor (Resistor built-in type) zDimensions (Unit : mm) DTC115EM DTC115EE 0.7 1.6 0.55 0.3 0.2 (3) 0.8 DTC115EUA ROHM : EMT3 2.9 0.8 (3) 1.6 2.8 2.1 1.25 0.1Min. (1) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 1.1 0.4 0.7 (3) (2) (1) GND (2) IN (3) OUT Abbreviated symbol : 29 DTC115EKA 0.9 0.2 0.15 1.0 Abbreviated symbol : 29 0.3 0.2 0.5 0.5 (1) IN (2) GND (3) OUT 2.0 (1) 0.2 1.3 0.15 (2) (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : 29 (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 0.3Min. ROHM : VMT3 (2) 0.13 0.5 0.1Min. (1)(2) 0.4 0.4 0.2 0.22 0.8 0.8 1.2 (3) 1.6 1.2 0.32 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : 29 zPackaging specifications Package Packaging type Part No. Code Basic ordering unit (pieces) VMT3 Taping T2L 8000 EMT3 Taping TL 3000 UMT3 Taping T106 3000 SMT3 Taping T146 3000 − − − − − DTC115EM DTC115EE − DTC115EUA − − DTC115EKA − − www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ − − 1/2 2009.05 - Rev.B DTC115EM / DTC115EE / DTC115EUA / DTC115EKA Data Sheet zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCC VIN 50 −10 to +40 V V Supply voltage Input voltage Output current IO 20 IC(Max.) 100 150 DTC115EM / DTC115EE Power DTC115EUA / DTC115EKA dissipation Junction temperature Storage temperature PD mA mW Tj 200 150 Tstg −55 to +150 °C °C zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Symbol VI(off) Min. Typ. Max. − − VI(on) VO(on) 3 − − 0.1 0.5 − 0.3 II − − IO(off) − 82 − GI − Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=1mA V IO=5mA, II=0.25mA VI=5V 0.15 0.5 − mA µA − VCC=50V, VI=0V IO=5mA, VO=5V − Input resistance R1 70 kΩ R2/R1 fT ∗ 0.8 100 1 130 Resistance ratio 1.2 − 250 − − MHz Transition frequency − VCE=10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor zElectrical characteristics curves 10 10 25℃ 85℃ OUTPUT CURRENT : I O (mA) INPUT VOLTAGE : V I (on) (V) Ta= －40℃ 125℃ 1 0.1 0.01 V0 = 0.3V 0.1 1 10 VCC = 5V 1 Ta=125℃ 85℃ 0.1 25℃ －40℃ 0.01 0 100 1000 Ta=125℃ OUTPUT VOLTAGE : VO(on) (V) DC CURENT GAIN : G I 25℃ －40℃ 10 1 0.01 0.1 1 10 OUTPUT CURENT : IO (mA) 2 1 VO= 5V 85℃ 100 1 3 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (mA) 100 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ IC /II=20 Ta=125℃ 85℃ 25℃ 0.1 0.01 0.1 －40℃ 1 10 100 OUOPUT CURRENT : IO (mA) 2/2 2009.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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