Thinki HERA1608G 16.0 ampere glass passivated process high efficiency rectifier Datasheet

®
HERA1601G thru HERA1608G
Pb
HERA1601G thru HERA1608G
Pb Free Plating Product
16.0 Ampere Glass Passivated Process High Efficiency Rectifiers
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
TO-220AC
Unit : inch (mm)
.419(10.66)
.196(5.00)
.387(9.85)
.163(4.16)
.139(3.55)
MIN
.054(1.39)
.624(15.87)
.548(13.93)
.269(6.85)
.226(5.75)
.045(1.15)
Application
.177(4.5)MAX
Mechanical Data
Case: Heatsink TO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
.50(12.7)MIN
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
HERA HERA HERA HERA HERA HERA HERA HERA
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
50
100
200
300
400
600
800
1000
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum Average Forward Rectified Current
IF(AV)
16
A
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
IFSM
250
A
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
IR
@ T A=25 ℃
@ T A=125 ℃
1.0
1.3
1.7
10
uA
Trr
50
80
Typical Junction Capacitance (Note 3)
Cj
120
80
Operating Temperature Range
Storage Temperature Range
V
uA
400
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
V
nS
pF
2.0
℃/W
TJ
- 65 to + 150
℃
TSTG
- 65 to + 150
℃
RθJC
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
®
HERA1601G thru HERA1608G
RATINGS AND CHARACTERISTIC CURVES (HERA1601G thru HERA1608G)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1000
INSTANTANEOUS REVERSE CURRENT (uA)
AVERAGE FORWARD A
CURRENT (A)
20
16
12
8
4
0
0
50
100
150
o
CASE TEMPERATURE ( C)
100
TA=125℃
10
TA=25℃
1
0.1
250
PEAK FORWARD SURGE
CURRENT (A)
0
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
200
40
60
80
100
120
140
TA=25o
8.3mS Single Half Sine Wave
JEDEC Method
150
FIG. 5- TYPICAL FORWARD CHARACTERISRICS
100
100
50
1
10
100
NUMBER OF CYCLES AT 60 Hz
FIG. 4- TYPICAL JUNCTION CAPACITANCE
300
250
INSTANTANEOUS FORWARD CURRENT (A)
HERA1601G-HERA1603G
0
JUNCTION CAPACITANCE (pF)
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
1
HERA1604G-HERA1605G
0.1
TA=25℃
200
HERA1606G-HERA1608G
HERA1601G-HERA1605G
0.01
150
0.4
100
HERA1606G-HERA1608G
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
50
0
1
10
100
1000
REVERSE VOLTAGE (V)
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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