® HERA1601G thru HERA1608G Pb HERA1601G thru HERA1608G Pb Free Plating Product 16.0 Ampere Glass Passivated Process High Efficiency Rectifiers Features Glass passivated chip junction Low forward voltage drop High current capability Low reverse leakage current High surge current capability TO-220AC Unit : inch (mm) .419(10.66) .196(5.00) .387(9.85) .163(4.16) .139(3.55) MIN .054(1.39) .624(15.87) .548(13.93) .269(6.85) .226(5.75) .045(1.15) Application .177(4.5)MAX Mechanical Data Case: Heatsink TO-220AC Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.1 gram approxiamtely .50(12.7)MIN Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems .038(0.96) .019(0.50) .025(0.65)MAX .1(2.54) .1(2.54) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HERA HERA HERA HERA HERA HERA HERA HERA 1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G 50 100 200 300 400 600 800 1000 Units Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current IF(AV) 16 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 250 A Maximum Instantaneous Forward Voltage (Note 1) @ 16 A VF Maximum DC Reverse Current at Rated DC Blocking Voltage IR @ T A=25 ℃ @ T A=125 ℃ 1.0 1.3 1.7 10 uA Trr 50 80 Typical Junction Capacitance (Note 3) Cj 120 80 Operating Temperature Range Storage Temperature Range V uA 400 Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance V nS pF 2.0 ℃/W TJ - 65 to + 150 ℃ TSTG - 65 to + 150 ℃ RθJC Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ ® HERA1601G thru HERA1608G RATINGS AND CHARACTERISTIC CURVES (HERA1601G thru HERA1608G) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1000 INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD A CURRENT (A) 20 16 12 8 4 0 0 50 100 150 o CASE TEMPERATURE ( C) 100 TA=125℃ 10 TA=25℃ 1 0.1 250 PEAK FORWARD SURGE CURRENT (A) 0 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 200 40 60 80 100 120 140 TA=25o 8.3mS Single Half Sine Wave JEDEC Method 150 FIG. 5- TYPICAL FORWARD CHARACTERISRICS 100 100 50 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL JUNCTION CAPACITANCE 300 250 INSTANTANEOUS FORWARD CURRENT (A) HERA1601G-HERA1603G 0 JUNCTION CAPACITANCE (pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 1 HERA1604G-HERA1605G 0.1 TA=25℃ 200 HERA1606G-HERA1608G HERA1601G-HERA1605G 0.01 150 0.4 100 HERA1606G-HERA1608G 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 50 0 1 10 100 1000 REVERSE VOLTAGE (V) Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/