DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGR269 Hybrid CATV amplifier module Objective specification 2000 May 01 Philips Semiconductors Objective specification Hybrid CATV amplifier module BGR269 FEATURES PINNING SOT115J • Extremely low noise PIN DESCRIPTION • Excellent linearity 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • Gold metallization ensures excellent reliability. 5 +VB 7 common APPLICATIONS 8 common • Reverse amplifier in two-way CATV systems operating in the 5 to 200 MHz frequency range. 9 output DESCRIPTION High performance amplifier operating at a voltage supply of 24 V DC in a SOT115J package. handbook, halfpage 1 2 3 5 7 8 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 5 MHz 34.5 35 35.5 dB Itot total current consumption (DC) VB = 24 V − − 330 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT Vi RF input voltage − 65 dBmV Tmb operating mounting base temperature −20 +100 °C Tstg storage temperature range −40 +100 °C 2000 May 01 2 Philips Semiconductors Objective specification Hybrid CATV amplifier module BGR269 CHARACTERISTICS Bandwidth 5 to 200 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 5 MHz 34.5 35 35.5 dB SL slope straight line f = 5 to 200 MHz 0 − 0.5 dB FL flatness of frequency response f = 5 to 200 MHz − − ±0.2 dB s11 input return losses f = 5 to 200 MHz 20 − − dB s22 output return losses f = 5 to 200 MHz 20 − − dB CTB composite triple beat 6 chs flat; Vo = 50 dBmV; measured at 37.25 MHz − − −73 dB 10 chs flat; Vo = 50 dBmV; measured at 61.25 MHz − − −62 dB 28 chs flat; Vo = 50 dBmV; measured at 199.25 MHz − − −58 dB 6 chs flat; Vo = 50 dBmV; measured at 37.25 MHz − − −66 dB 10 chs flat; Vo = 50 dBmV; measured at 61.25 MHz − − −57 dB 28 chs flat; Vo = 50 dBmV; measured at 61.25 MHz − − −51 dB 6 chs flat; Vo = 50 dBmV; measured at 24 or 38.5 MHz − − −68 dB 10 chs flat; Vo = 50 dBmV; measured at 24 or 62.5 MHz − − −65 dB 28 chs flat; Vo = 50 dBmV; measured at 24 or 200.5 MHz − − −56 dB Xmod CSO cross modulation composite second order distortion d2 second order distortion note 1 − − −70 dB d3 third order distortion note 2 − − −80 dB F noise figure f = 65 MHz − − 4 dB f = 200 MHz − − 4.5 dB note 3 − − 330 mA Itot total current consumption Notes 1. fp = 25.25 MHz; Vp = 50 dBmV; fq = 37.25 MHz; Vq = 50 dBmV; measured at fp + fq = 62.5 MHz. 2. fp = 7.25 MHz; Vp = 50 dBmV; fq = 19.25 MHz; Vq = 50 dBmV; fr = 37.25 MHz; Vr = 50 dBmV; measured at fp + fq + fr = 63.75 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2000 May 01 3 Philips Semiconductors Objective specification Hybrid CATV amplifier module BGR269 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 99-02-06 SOT115J 2000 May 01 q 4 Philips Semiconductors Objective specification Hybrid CATV amplifier module BGR269 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 May 01 5 Philips Semiconductors Objective specification Hybrid CATV amplifier module BGR269 NOTES 2000 May 01 6 Philips Semiconductors Objective specification Hybrid CATV amplifier module BGR269 NOTES 2000 May 01 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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