Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N-Channel Logic Level Enhancement Mode MOSFET MTN7478Q8 BVDSS ID RDSON@VGS=10V, ID=7A RDSON@VGS=4.5V, ID=5A 60V 7A 14mΩ (typ.) 16mΩ (typ.) Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free Lead Plating and Halogen-free Package Symbol Outline MTN7478Q8 SOP-8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTN7478Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN7478Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=4.2A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=100℃ VDS VGS Tj, Tstg 60 ±20 7 4.4 30 *1 7 15 0.3 *2 2.5 *3 1 -55~+150 Symbol Rth,j-c Rth,j-a Value 25 50 *3 ID IDM IAS EAS EAR PD Operating Junction and Storage Temperature Range Limits Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Unit °C/W °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) Dynamic Ciss Coss Crss MTN7478Q8 *1 Min. Typ. Max. Unit 60 1.0 - 1.6 20 14 16 2.5 ±100 1 25 20 25 V V S nA - 2815 104 85 - μA mΩ mΩ pF Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=7A VGS=±20V VDS =48V, VGS =0V VDS =48V, VGS =0V, TJ=125°C VGS =10V, ID=7A VGS =4.5V, ID=5A VGS=0V, VDS=25V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Source-Drain Diode IS *1 ISM *3 VSD *1 trr *1 Qrr *1 Min. - Typ. 29 8.9 9.3 17 7 72 12 Max. - - 0.78 60 115 2.3 9.2 1.2 - Unit Test Conditions nC VDS=48V, VGS=4.5V, ID=7A ns VDS=30V, ID=7A, VGS=10V, RGS=6.2Ω A V ns nC IS=7A, VGS=0V IF=7A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTN7478Q8 CYStek Product Specification Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 ID, Drain Current(A) 45 BVDSS, Normalized Drain-Source Breakdown Voltage 50 10V, 9V, 8V, 7V, 6V, 5V, 4V 40 35 30 25 VGS=3V 20 15 1.2 1 0.8 0.6 10 ID=250μA, VGS=0V 5 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 100 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=3.5V 4.5V 10V VGS=2.5V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 100 0 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(ON), Normalized Static DrainSource On-State Resistance 100 R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 90 ID=7A 80 70 60 50 40 30 20 10 2 VGS=10V, ID=7A 1.6 1.2 0.8 0.4 RDSON@Tj=25°C : 14mΩ typ. 0 0 0 MTN7478Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 75 100 125 150 175 10 VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 50 Gate Charge Characteristics 100 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 VDS=48V ID=7A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 50 60 Qg, Total Gate Charge(nC) 70 80 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 9 RDS(ON) Limited ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 0 100μs 1ms 10ms 1 100ms TA=25°C,Tj=150°C RθJA=50°C/W, VGS=10V Single Pulse 0.1 1s DC 8 7 6 5 4 3 2 TA=25°C, VGS=10V, RθJA=50°C/W 1 0 0.01 0.01 MTN7478Q8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 30 500 VDS=10V 400 20 Power (W) ID, Drain Current (A) 25 15 TJ(MAX) =150°C TA=25°C θJA=50°C/W 300 200 10 100 5 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM *RθJA(t) 4.RθJA=50°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTN7478Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTN7478Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN7478Q8 CYStek Product Specification Spec. No. : C925Q8 Issued Date : 2014.02.27 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name 7478 Data Code : First Code : Last digit of Christian Year Second Code : Month Code : Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M Last Two Codes : Production Serial Code, 01~99 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN7478Q8 CYStek Product Specification