MT25C18T1 Thyristor Module VRRM / VDRM 800 to 1800V ITAV 25A Applications y y y y Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate UL recognized applied for file no. E360040 Module Type TYPE VRRM VRSM MT25C08T1 MT25C12T1 MT25C16T1 MT25C18T1 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions Values Units ITAV o Sine 180 ;Tc=85℃ 25 A ITSM TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 550 480 A i2t TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 1500 1150 A2s Visol a.c.50HZ;r.m.s.;1min 3000 V -40 to 125 -40 to 125 ℃ Tvj Tstg Mt To terminals(M5) 3±15% ℃ Nm Ms To heatsink(M6) 5±15% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt TJ= TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Weight Module(Approximately) 100 g Symbol Conditions Values Units Rth(j-c) Cont.;per thyristor / per module 0.9/0.45 ℃/W Rth(c-s) per thyristor / per module 0.2/0.1 ℃/W Thermal Characteristics Document Number: S-M0033 Rev.1.0, May.31, 2013 www.apt-semi.com 1 MT25C18T1 Electrical Characteristics Values Typ. Symbol Conditions VTM T=25℃ ITM =75A TVJ =TVJM ,VR=VRRM ,VD=VDRM 1.8 V 10 mA For power-loss calculations only (TVJ =125℃) TVJ =TVJM 0.9 V rT 12 mΩ VGT TVJ =25℃ , VD =6V 2.5 V IGT VGD TVJ =25℃ , VD =6V TVJ =125℃ , VD =2/3VDRM 150 0.25 mA V IGD TVJ =125℃ , VD =2/3VDRM IL TVJ =25℃ , RG = 33 Ω TVJ =25℃ , VD =6V IRRM/IDRM VTO IH tgd tq Document Number: S-M0033 Rev.1.0, May.31, 2013 Min. TVJ =25℃, IG=1A, diG/dt=1A/us TVJ =TVJM Max. Units 5 mA 250 400 mA 100 200 1 mA us 80 us www.apt-semi.com 2 MT25C18T1 Performance Curves 75 50 W A sin.180 40 DC rec.120 DC rec.60 50 30 rec.30 sin.180 rec.120 20 25 rec.60 rec.30 10 PTAV 0 ITAVM 0 ITAV 10 20 30 A 0 40 0 Tc Fig1. Power dissipation 50 100 ℃ 130 Fig2.Forward Current Derating Curve 1000 1.2 ℃/ W 50HZ A Zth(j-S) Zth(j-C) 0.8 500 0.4 0 0 0.001 t 0.01 0.1 1 10 S 100 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 100 Typ. A 75 max. 50 25 25℃ - - -125℃ IT 0 0 VTM 0.5 1.0 1.5 2.0 V 2.5 Fig5. Forward Characteristics Document Number: S-M0033 Rev.1.0, May.31, 2013 www.apt-semi.com 3 MT25C18T1 100 1/2·MT25C18T1 V 20V;20Ω 10 VGT ∧ 1 VG Tvj -40℃ 25℃ 125℃ VGD125℃ PG(tp) IGT IGD125℃ 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T1 Dimensions in mm Document Number: S-M0033 Rev.1.0, May.31, 2013 www.apt-semi.com 4